Piezoelectric acoustic resonator with dielectric protective layer manufactured with piezoelectric thin film transfer process
A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL's dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.
1. A method for fabricating an acoustic resonator device, the method comprising:
forming a piezoelectric film overlying a growth substrate;
forming a first electrode overlying the piezoelectric film;
forming a first passivation layer overlying the first electrode and the piezoelectric film;
forming a sacrificial layer overlying the first passivation layer, the first electrode, and the piezoelectric film;
forming a support layer overlying the sacrificial layer, the first passivation layer, the first electrode, and the piezoelectric film thereby forming a device on the growth substrate;
polishing the support layer;
forming a bonding support layer overlying a bond substrate;
flipping the device on the growth substrate and bonding the polished support layer to the bonding support layer thereby forming a bonded device;
removing the growth substrate from the bonded device;
forming a dielectric protection layer (DPL) overlying the piezoelectric layer;
forming an electrode contact via within the piezoelectric film and the DPL overlying the first electrode on the bonded device;
removing a portion of the DPL overlying the piezoelectric film and the first electrode;
forming a second electrode layer overlying the DPL, the piezoelectric film, and within the contact via;
etching the second electrode layer to form a top metal separated from a second electrode, wherein the top metal is physically coupled to the first electrode through the electrode contact via and the second electrode is overlying the DPL and the piezoelectric film;
forming a first contact metal overlying the second electrode, the DPL, and the piezoelectric film;
forming a second contact metal overlying the top metal, the DPL, and the piezoelectric film;
forming a second passivation layer overlying the DPL, the piezoelectric film, the second electrode, and the top metal;
forming one or more release holes within the DPL, the piezoelectric film, and the first passivation layer overlying the sacrificial layer on the bonded device; and
removing the sacrificial layer by way of the one or more release holes to form an air cavity within the bonded device.
2. The method of claim 1 wherein the growth substrate and bond substrate includes silicon (S), silicon carbide (SiC), sapphire (Al 2 O 3 ), silicon dioxide (SiO 2 ), or other silicon materials.
3. The method of claim 1 wherein the piezoelectric film is a single crystal or polycrystalline piezoelectric film that includes aluminum nitride (AlN), aluminum scandium nitride (AlScN), gallium nitride (GaN), Al x Ga 1-x N alloys, or other epitaxial materials.
4. The method of claim 1 wherein the piezoelectric film is an upper portion of a polycrystalline piezoelectric film that includes aluminum nitride (AlN), aluminum scandium nitride (AlScN), gallium nitride (GaN), Al x Ga 1-x N alloys, or other polycrystalline epitaxial materials.
5. The method of claim 1 wherein the first electrode, second electrode, and top metal include molybdenum (Mo), ruthenium (Ru), tungsten (W), or other conductive materials;
wherein the first and second passivation layers, and the sacrificial layer include silicon nitride (SiN), silicon oxide (SiO), silicon dioxide (SiO 2 ), or other silicon materials; and
wherein the first and second contact metals include gold (Au), aluminum (Al), copper (Cu), nickel (Ni), aluminum bronze (AlCu), or other metal materials.
6. The method of claim 1 wherein the DPL is characterized by a thickness of 50 to 10,000 Angstroms.
7. The method of claim 1 wherein polishing the support layer includes a chemical-mechanical planarization (CMP) process; wherein the support layer and the bonding support layer include silicon dioxide (SiO 2 ) or other silicon materials; and wherein removing the growth substrate includes a grinding process, a blanket etching process, a film transfer process, an ion implantation transfer process, or a laser crack transfer process; and wherein the removal of the sacrificial layer includes a poly-Si etch or an a-Si etch or other etching process.
8. The method of claim 1 further comprising processing the second electrode and the top metal to form a processed second electrode and a processed top metal, wherein the processed second electrode includes an energy confinement structure.
9. The method of claim 1 further comprising processing the first electrode to form a processed first electrode, wherein the processed first electrode includes an energy confinement structure.
10. The method of claim 1 wherein the DPL includes silicon dioxide (SiO 2 ), silicon nitride (SiN), aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ), silicon oxycarbide (SiOC), or other oxide material.
11. A method for fabricating an acoustic resonator device, the method comprising:
forming a piezoelectric film overlying a growth substrate;
forming a dielectric protection layer (DPL) overlying the piezoelectric film;
removing a portion of the DPL exposing a portion of the piezoelectric film
forming a first electrode overlying the DPL and the piezoelectric film, wherein the first electrode is configured overlying the exposed portion of the piezoelectric film;
forming a first passivation layer overlying the first electrode, the DPL, and the piezoelectric film;
forming a sacrificial layer overlying the first passivation layer, the first electrode, the DPL, and the piezoelectric film;
forming a support layer overlying the sacrificial layer, the first passivation layer, the first electrode, the DPL, and the piezoelectric film thereby forming a device on the growth substrate;
polishing the support layer;
forming a bonding support layer overlying a bond substrate;
flipping the device on the growth substrate and bonding the polished support layer to the bonding support layer thereby forming a bonded device;
removing the growth substrate from the bonded device;
forming an electrode contact via within the piezoelectric film and overlying the first electrode on the bonded device;
forming a second electrode layer overlying the piezoelectric film and within the contact via;
etching the second electrode layer to form a top metal separated from a second electrode, wherein the top metal is physically coupled to the first electrode through the electrode contact via and the second electrode is overlying the piezoelectric film;
forming a first contact metal overlying the second electrode and the piezoelectric film;
forming a second contact metal overlying the top metal and the piezoelectric film;
forming a second passivation layer overlying the piezoelectric film, the second electrode, and the top metal;
forming one or more release holes within the piezoelectric film and the first passivation layer overlying the sacrificial layer on the bonded device; and
removing the sacrificial layer by way of the one or more release holes to form an air cavity within the bonded device.
12. The method of claim 11 wherein the growth substrate and bond substrate includes silicon (S), silicon carbide (SiC), sapphire (Al 2 O 3 ), silicon dioxide (SiO 2 ), or other silicon materials.
13. The method of claim 11 wherein the piezoelectric film is a single crystal or polycrystalline piezoelectric film that includes aluminum nitride (AlN), aluminum scandium nitride (AlScN), gallium nitride (GaN), Al x Ga 1-x N alloys, or other epitaxial materials.
14. The method of claim 11 wherein the piezoelectric film is an upper portion of a polycrystalline piezoelectric film that includes aluminum nitride (AlN), aluminum scandium nitride (AlScN), gallium nitride (GaN), Al x Ga 1-x N alloys, or other polycrystalline epitaxial materials.
15. The method of claim 11 wherein the first electrode, second electrode, and top metal include molybdenum (Mo), ruthenium (Ru), tungsten (W), or other conductive materials;
wherein the first and second passivation layers, and the sacrificial layer include silicon nitride (SiN), silicon oxide (SiO), silicon dioxide (SiO 2 ), or other silicon materials; and
wherein the first and second contact metals include gold (Au), aluminum (Al), copper (Cu), nickel (Ni), aluminum bronze (AlCu), or other metal materials.
16. The method of claim 11 wherein the DPL is characterized by a thickness of 50 to 10,000 Angstroms.
17. The method of claim 11 wherein polishing the support layer includes a chemical-mechanical planarization (CMP) process; wherein the support layer and the bonding support layer include silicon dioxide (SiO 2 ) or other silicon materials; and wherein removing the growth substrate includes a grinding process, a blanket etching process, a film transfer process, an ion implantation transfer process, or a laser crack transfer process; and wherein the removal of the sacrificial layer includes a poly-Si etch or an a-Si etch or other etching process.
18. The method of claim 11 further comprising processing the second electrode and the top metal to form a processed second electrode and a processed top metal, wherein the processed second electrode includes an energy confinement structure.
19. The method of claim 11 further comprising processing the first electrode to form a processed first electrode, wherein the processed first electrode includes an energy confinement structure.
20. The method of claim 11 wherein the DPL includes silicon dioxide (SiO 2 ), silicon nitride (SiN), aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ), silicon oxycarbide (SiOC), or other oxide material.