Pedestal heater for spatial multi-wafer processing tool
Substrate supports comprising a top plate positioned on a shaft are described. The top plate including a primary heating element a first depth from the surface of the top plate, a inner zone heating element a second depth from the surface of the top plate and an outer zone heating element a third depth from the surface of the top plate. Substrate support assemblies comprising a plurality of substrate supports and methods of processing a substrate are also disclosed.
1. A substrate support comprising:
a top plate positioned on a support shaft, the top plate having a support surface and a bottom surface defining a thickness of the top plate, the support shaft being hollow and comprising a sidewall having a thickness;
a primary heating element within the top plate at a first depth below the support surface;
an inner zone heating element within the top plate at a second depth from the support surface greater than the first depth, the inner zone heating element positioned over the sidewall of the support shaft; and
an outer zone heating element within the top plate at a third depth from the support surface greater than the first depth, the outer zone heating element extending further from a central axis of the substrate support than the primary heating element.
2. The substrate support of claim 1 , wherein the inner zone heating element is centered over the thickness of the sidewalls.
3. The substrate support of claim 1 , further comprising a primary heating element power line, an inner zone heating element power line and an outer zone heating element power line routed through the hollow shaft to the top plate.
4. The substrate support of claim 1 , wherein the first depth is greater than or equal to about 50% of the thickness of the top plate.
5. The substrate support of claim 1 , wherein the second depth and the third depth are the same.
6. The substrate support of claim 1 , wherein the outer zone heating element is located at a distance from the central axis sufficient to overlap an edge of a substrate to be supported by the support surface.
7. The substrate support of claim 1 , wherein the top plate has a thickness in the range of about 10 mm to about 30 mm.
8. The substrate support of claim 1 , further comprising a seal band formed on the support surface.
9. The substrate support of claim 8 , wherein the top plate has a thickness of about 20 mm.
10. The substrate support of claim 1 , further comprising one or more electrodes configured to form an electrostatic chuck.
11. The substrate support of claim 10 , wherein the mesas have a height in the range of about 10 μm to about 20 μm.
12. The substrate support of claim 11 , further comprising a plurality of mesas formed within the seal band on the support surface.
13. The substrate support of claim 1 , wherein the primary heating element is connected to a power supply with a power in the range of about 900 W to about 1300 W.
14. The substrate support of claim 1 , further comprising one or more temperature sensors within the top plate.
15. The substrate support of claim 14 , wherein the inner zone heating element and the outer zone heating element are connected to one or more power supplies with a power in the range of about 40 W to about 70 W.
16. The substrate support of claim 1 , further comprising a controller comprising one or more configurations selected from a configuration to power the primary heating element, a configuration to power the inner zone heating element, a configuration to power the outer zone heating element, a configuration to measure a temperature of the top plate, and/or a configuration to power one or more electrodes within the top plate to electrostatically chuck a substrate to the support surface.
17. A method of processing a substrate comprising:
powering a primary heating element, an inner zone heating element and an outer zone heating element to control a temperature of a substrate positioned on a support surface of a top plate of a substrate support, the primary heating element positioned within the top plate at a first depth below a support surface of the top plate, the inner zone heating element within the top plate at a second depth different from the first depth, the inner zone heating element aligned with a sidewall of a support shaft of the substrate support, the outer zone heating element within the top plate at a third depth from the support surface different than the first depth.
18. The method of claim 17 , wherein the outer zone heating element extends further from a central axis of the substrate support than the primary heating element.
19. The method of claim 17 , wherein powering the primary heating element comprises adjusting a power supply with a power in the range of 900 W to 1300 W.
20. The method of claim 19 , wherein powering the inner zone heating element and the outer zone heating element comprises adjusting a power supply with a power in the range of 40 W to 70 W.