Semiconductor structure having multiple dielectric waveguide channels and method for forming semiconductor structure

1. A method of forming a semiconductor structure, comprising:

providing a first inter-level dielectric (ILD) layer overlying a molding layer, the molding layer comprising a transmitter ground structure and a receiver ground structure;

patterning the first ILD layer to form a plurality of first openings exposing the transmitter ground structure and the receiver ground structure through the molding layer;

forming a first lower transmitter electrode and a first lower receiver electrode by depositing a first metal material within the plurality of first openings, the first lower transmitter electrode and the first lower receiver electrode being respectively coupled to the transmitter ground structure and the receiver ground structure;

forming a first dielectric waveguide overlying the first ILD layer, the first lower transmitter electrode and the first lower receiver electrode;

depositing a second ILD layer overlying the first dielectric waveguide and forming a plurality of second openings in the second ILD layer;

forming a second lower transmitter electrode and a second lower receiver electrode by depositing a second metal material within the plurality of second openings, the second lower transmitter electrode and the second lower receiver electrode being respectively coupled to the transmitter ground structure and the receiver ground structure; and

forming a second dielectric waveguide overlying the second ILD layer, the second lower transmitter electrode and the second lower receiver electrode.

2. The method of claim 1 , wherein the first dielectric waveguide comprises a first transmission end portion and a first receiver end portion opposite to the first transmission end portion, wherein the first dielectric waveguide is configured to guide a first electromagnetic signal from the first transmission end portion to the first receiver end portion, wherein the second dielectric waveguide comprises a second transmission end portion and a second receiver end portion opposite to the second transmission end portion, wherein the second dielectric waveguide is configured to guide a second electromagnetic signal from the second transmission end portion to the second receiver end portion, wherein the second electromagnetic signal is different in frequency from the first electromagnetic signal.

3. The method of claim 1 , wherein a dielectric constant of the first dielectric waveguide is greater than a dielectric constant of the second dielectric waveguide.

4. The method of claim 1 , wherein a thickness of the first dielectric waveguide is less than a thickness of the second dielectric waveguide.

5. The method of claim 1 , wherein a dielectric constant of the first ILD layer is less than a dielectric constant of the first dielectric waveguide and a dielectric constant of the second dielectric waveguide.

6. The method of claim 1 , wherein the first dielectric waveguide overlaps the first lower transmitter electrode and the first lower receiver electrode from a top-view perspective.

7. The method of claim 1 , further comprising:

forming a first upper transmitter electrode over the first dielectric waveguide, the first upper transmitter electrode being configured to form a first transmitter coupling structure with the first lower transmitter electrode to couple a transmitter circuit to the first dielectric waveguide; and

forming a first upper receiver electrode over the first dielectric waveguide, the first upper receiver electrode being configured to form a first receiver coupling structure with the first lower receiver electrode to couple the first dielectric waveguide to a receiver circuit.

8. The method of claim 7 , further comprising forming a patterned third ILD layer over the first ILD layer and adjacent to the first dielectric waveguide prior to forming the second ILD layer, wherein the patterned third ILD layer includes a plurality of third openings, and the first upper transmitter electrode and the first upper receiver electrode are formed within the plurality of third openings.

9. The method of claim 7 , wherein the second ILD layer covers the first upper transmitter electrode and the first upper receiver electrode.

10. The method of claim 1 , wherein the first dielectric waveguide comprises at least one of PbZrTiO3, BaSrTiO3 and BaTiO3, and the second dielectric waveguide comprises at least one of SiO2, SiNX, Al2O3, Y2O3, TiO2, HfOX, ZrO2, HfSiOX, ZrTiOX, TaOX and SrTiO3.

11. A method of forming a semiconductor structure, comprising:

depositing a first inter-level dielectric (ILD) layer overlying a semiconductor die;

forming a first lower transmitter electrode and a first lower receiver electrode over the first ILD layer;

forming a first dielectric waveguide overlying the first ILD layer, the first lower transmitter electrode and the first lower receiver electrode, the first dielectric waveguide comprising a first thickness;

depositing a second ILD layer overlying the first dielectric waveguide;

forming a second lower transmitter electrode and a second lower receiver electrode over the second ILD layer; and

forming a second dielectric waveguide overlying the second ILD layer, the second lower transmitter electrode and the second lower receiver electrode, the second dielectric waveguide comprising a second thickness different from the first thickness.

12. The method of claim 11 , wherein a dielectric constant of the first dielectric waveguide is different from a dielectric constant of the second dielectric waveguide.

13. The method of claim 11 , wherein forming the first dielectric waveguide comprises:

depositing a third ILD layer over the first ILD layer, the first lower transmitter electrode and the first lower receiver electrode; and

patterning the third ILD layer to form the first dielectric waveguide having first transmission end portion and a second transmission end portion opposite to the first transmission end portion, wherein the first and second transmission end portions are coupled to the first lower transmitter electrode and the first lower receiver electrode, respectively.

14. The method of claim 13 , further comprising forming a fourth ILD layer laterally surrounding the first dielectric waveguide, wherein a dielectric constant of the fourth ILD layer is less than a dielectric constant of the first dielectric waveguide.

15. The method of claim 11 , further comprising:

forming a plurality of conductive vias adjacent to the semiconductor die; and

encapsulating the semiconductor die and the conductive vias by a molding compound.

16. The method of claim 11 , wherein the first dielectric waveguide overlaps the second dielectric waveguide from a top-view perspective.

17. A method of forming a semiconductor structure, comprising:

providing a semiconductor die over a carrier;

encapsulating the semiconductor die using a molding layer;

forming a first patterned inter-layer dielectric (ILD) layer over the semiconductor die and the molding layer;

forming a first lower transmitter electrode and a first lower receiver electrode within the first patterned ILD layer;

depositing a first dielectric material over the first patterned ILD layer and the first lower transmitter electrode and the first lower receiver electrode;

patterning the first dielectric material to form a first dielectric waveguide coupled to the first lower transmitter electrode and the first lower receiver electrode;

depositing a second dielectric material over the first dielectric waveguide; and

patterning the second dielectric material to form a second dielectric waveguide over the first dielectric waveguide,

wherein an electromagnetic signal guided by the first dielectric waveguide is different in frequency from an electromagnetic signal guided by the second dielectric waveguide.

18. The method of claim 17 , further comprising forming an external connector over the second dielectric waveguide.

19. The method of claim 17 , further comprising:

forming a first upper transmitter electrode arranged on an upper side of the first dielectric waveguide and coupled to a transmitter circuit within the molding layer; and

forming a second upper transmitter electrode arranged on an upper side of the second dielectric waveguide and coupled to the transmitter circuit.

20. The method of claim 17 , further comprising:

forming a first upper receiver electrode arranged on an upper side of the first dielectric waveguide and coupled to a receiver circuit within the molding layer; and

forming a second upper receiver electrode arranged on an upper side of the second dielectric waveguide and coupled to the receiver circuit.