Imaging device and electronic apparatus
Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.
1. A light detecting device, comprising:
a first unit including eight photodiodes, eight transfer transistors, a first floating diffusion region, and a second floating diffusion region in a plan view, wherein the eight photodiodes include:
four photodiodes on an upper side of the first unit, and
four photodiodes on a lower side of the first unit;
a second unit including eight photodiodes, eight transfer transistors, a third floating diffusion region, and a fourth floating diffusion region, wherein the second unit is adjacent to the first unit in the plan view;
a third unit including a first reset transistor, a first amplification transistor, a first select transistor, and a first transistor, wherein
the third unit is between the first unit and the second unit in the plan view,
the eight photodiodes of the first unit share the first amplification transistor,
the first transistor is between the first amplification transistor and the first reset transistor in the plan view,
the first transistor and the first reset transistor have a common source drain region, and
the first amplification transistor is closer to the four photodiodes on the upper side of the first unit than the four photodiodes on the lower side of the first unit; and
a fourth unit including a second reset transistor, a second amplification transistor, a second select transistor, and a second transistor, wherein
the eight photodiodes of the second unit share the second amplification transistor, and
the second unit is between the third unit and the fourth unit in the plan view.
2. The light detecting device of claim 1 , wherein
the first unit is within a first rectangular area, and
the second unit is within a second rectangular area in the plan view.
3. The light detecting device of claim 1 , wherein the first transistor is between the first reset transistor and the first select transistor in the plan view.
4. The light detecting device of claim 1 , wherein the first transistor is a dummy transistor.
5. The light detecting device of claim 1 , wherein the light detecting device is a backside-illumination type light detecting device.
6. The light detecting device of claim 1 , further comprising a well contact in the plan view.
7. The light detecting device of claim 1 , wherein the first amplification transistor, the first reset transistor, the first select transistor, and the first transistor are in a specific direction.
8. The light detecting device of claim 1 , wherein the eight photodiodes of the first unit further share the first select transistor and the first transistor.
9. The light detecting device of claim 1 , wherein the first floating diffusion region and the second floating diffusion region are coupled to the first amplification transistor.
10. The light detecting device of claim 1 , wherein the first amplification transistor has a length longer than each of the first reset transistor, the first select transistor, and the first transistor.
11. An electronic apparatus, comprising:
a light detecting device that comprises:
a first unit including eight photodiodes, eight transfer transistors, a first floating diffusion region, and a second floating diffusion region in a plan view,
wherein the eight photodiodes include:
four photodiodes on an upper side of the first unit, and
four photodiodes on a lower side of the first unit;
a second unit including eight photodiodes, eight transfer transistors, a third floating diffusion region, and a fourth floating diffusion region, wherein the second unit is adjacent to the first unit in the plan view;
a third unit including a first reset transistor, a first amplification transistor, a first select transistor, and a first transistor, wherein
the third unit is between the first unit and the second unit in the plan view,
the eight photodiodes of the first unit share the first amplification transistor and the first reset transistor,
the first transistor is between the first amplification transistor and the first reset transistor in the plan view,
the first transistor and the first reset transistor have a common source drain region, and
the first amplification transistor is closer to the four photodiodes on the upper side of the first unit than the four photodiodes on the lower side of the first unit; and
a fourth unit including a second reset transistor, a second amplification transistor, a second select transistor, and a second transistor, wherein
the eight photodiodes of the second unit share the second amplification transistor, and
the second unit is between the third unit and the fourth unit in the plan view.