Gate-all-around devices with isolated and non-isolated epitaxy regions for strain engineering
A semiconductor device is provided. The semiconductor device includes a semiconductor substrate; a transistor stack structure formed on the semiconductor substrate, the transistor stack structure including a first FET and a second FET, where the first FET is a different polarity than the second FET; a first source-drain epitaxial layer of the first FET formed directly on the substrate adjacent to the first FET; and a second source-drain epitaxial layer of the second FET formed on the substrate adjacent to the second FET, wherein a bottom dielectric isolation layer is formed between the substrate and the second epitaxial layer.
1. A semiconductor device comprising:
a semiconductor substrate;
a transistor stack structure formed on the semiconductor substrate, the transistor stack structure including a first FET and a second FET, where the first FET is a different polarity than the second FET;
a first source-drain epitaxial layer of the first FET formed on and in direct contact with the substrate adjacent to the first FET; and
a second source-drain epitaxial layer of the second FET formed on the substrate adjacent to the second FET, wherein a bottom dielectric isolation layer is formed between the substrate and the second epitaxial layer.
2. The semiconductor device of claim 1 , wherein the first FET is a pFET and the second FET is an nFET.
3. The semiconductor device of claim 1 , wherein the first FET is an nFET and the second FET is a pFET.
4. The semiconductor device of claim 1 , wherein the bottom dielectric isolation layer is also formed between the substrate and the first FET and between the substrate and the second FET, and wherein the bottom dielectric isolation layer is not present between the substrate and the first source-drain epitaxial layer.
5. The semiconductor device according to claim 1 , wherein the bottom dielectric isolation layer is not present between the substrate and the first source-drain epitaxial layer.
6. The semiconductor device according to claim 1 , wherein the first FET is a pFET including a pWF metal layer stack and the second FET is an nFET including an nWF metal layer stack.
7. The semiconductor device according to claim 1 , wherein the first source-drain epitaxial layer of the first FET that is formed directly on the substrate generates strain that is applied to the first FET.
8. The semiconductor device according to claim 7 , further comprising a liner layer that is a p-type epitaxial liner layer comprised of SiB,
wherein the first source-drain epitaxial layer is a p-type epitaxial layer, and
wherein the p-type epitaxial layer is comprised of SiGeB.
9. The semiconductor device according to claim 7 ,
wherein the first FET is a nanosheet structure including an active semiconductor layer or at least two stacked active semiconductor layers surrounded by gate stack layers, and
wherein the liner layer is a u-shaped layer covering sidewalls of the first FET and covering the substrate.
10. The semiconductor device according to claim 1 , wherein the first FET has a gate length that is shorter than a gate length of the second FET.
11. The semiconductor device according to claim 1 ,
wherein the first FET is a p-type nanosheet structure including an active semiconductor layer or at least two stacked active semiconductor layers surrounded by gate stack layers, and
wherein the second FET is an n-type nanosheet structure including an active semiconductor layer or at least two stacked active semiconductor layers surrounded by the gate stack layers.
12. The semiconductor device according to claim 1 , further comprising a spacer layer formed on gate sidewalls of the first FET and the second FET.
13. The semiconductor device according to claim 12 , wherein a composition of the spacer layer is different than a composition of the bottom dielectric isolation layer.
14. A method of manufacturing a semiconductor device, the method comprising:
forming a transistor stack structure on a semiconductor substrate, the transistor stack structure including a first FET and a second FET, where the first FET is a different polarity than the second FET;
forming a first source-drain epitaxial layer on and in direct contact with the substrate adjacent to the first FET; and
forming a second source-drain epitaxial layer on the substrate adjacent to the second FET, wherein a bottom dielectric isolation layer is formed between the substrate and the second epitaxial layer.
15. The method according to claim 14 , wherein the first FET is a pFET and the second FET is an nFET.
16. The method according to claim 14 , wherein the first FET is an nFET and the second FET is a pFET.
17. The method according to claim 14 , wherein the bottom dielectric isolation layer is also formed between the substrate and the first FET and between the substrate and the second FET, and wherein the bottom dielectric isolation layer is not present between the substrate and the first source-drain epitaxial layer.
18. The method according to claim 14 , wherein the bottom dielectric isolation layer is not present between the substrate and the first source-drain epitaxial layer.
19. The method according to claim 14 , wherein the first source-drain epitaxial layer of the first FET that is formed directly on the substrate generates strain that is applied to the first FET.
20. The method according to claim 14 ,
wherein the first FET is a p-type nanosheet structure including an active semiconductor layer or at least two stacked active semiconductor layers surrounded by gate stack layers, and
wherein the second FET is an n-type nanosheet structure including an active semiconductor layer or at least two stacked active semiconductor layers surrounded by the gate stack layers.