Semiconductor device
View Patent ↗A semiconductor device includes first and second electrodes; a semiconductor part between the first and second electrodes; a control electrode and a third electrode in a trench between the semiconductor part and the second electrode. The device further includes a first insulating part insulating the control electrode from the semiconductor part; a second insulating part insulating the third electrode from the semiconductor part; and a third insulating part insulating the third electrode from the control electrode. The second insulating part includes first and second insulating films and a portion of a third insulating film. The first insulating film is provided between the semiconductor part and the third electrode. The second insulating film is provided between the first insulating film and the third electrode. The third insulating film includes the portion between the first insulating film and the second insulating film, and another portion inside the third insulating part.
1. A semiconductor device, comprising:
a semiconductor part;
a first electrode provided on a back surface of the semiconductor part;
a second electrode provided on a front surface of the semiconductor part;
a control electrode provided between the semiconductor part and the second electrode, the semiconductor part having a trench at the front surface side, the control electrode being provided in the trench and electrically insulated from the semiconductor part by a first insulating part;
a third electrode provided inside the trench, the third electrode having a bottom end provided at a bottom of the trench, the third electrode being provided apart from the control electrode, a distance between the third electrode and the first electrode being smaller than a distance between the control electrode and the first electrode, the third electrode being electrically insulated from the semiconductor part by a second insulating part and electrically insulated from the control electrode by a third insulating part;
a first insulating film provided in the second insulating part, the first insulating film being provided between the semiconductor part and the third electrode;
a second insulating film shared by the second insulating part and the third insulating part, the second insulating film being provided between the first insulating film and the third electrode and between the control electrode and the third electrode; and
a third insulating film shared by the second insulating part and the third insulating part, the third insulating film being provided between the first and second insulating films and between the control electrode and the second insulating film, the third insulating film being different in composition from the first insulating film and the second insulating film;
the semiconductor part including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a third semiconductor layer of the first conductivity type,
the first semiconductor layer extending between the first and second electrodes,
the second semiconductor layer being provided between the first semiconductor layer and the second electrode,
the third semiconductor layer being selectively provided between the second semiconductor layer and the second electrode,
the first insulating part being provided between the second semiconductor layer and the control electrode,
the second insulating part being provided between the third electrode and the first semiconductor layer, the second insulating part including the first to third insulating films at the bottom of the trench with the third insulating film being provided between the first and second insulating films at the bottom of the trench, the third insulating film being provided between the bottom end of the third electrode and the first semiconductor layer.
2. The device according to claim 1 , wherein
the control electrode is provided between the third electrode and the second semiconductor layer of the semiconductor part,
the third electrode and the control electrode being arranged along an interface between the first semiconductor layer and the second semiconductor layer.
3. The device according to claim 1 , wherein
the first insulating film and the second insulating film are silicon oxide films, and
the third insulating film is a silicon nitride film.
4. The device according to claim 1 , further comprising a fourth insulating part provided between the second electrode and the control electrode and between the second electrode and the third electrode, wherein the third insulating film extends between the third electrode and the fourth insulating part.
5. The device according to claim 4 , further comprising:
a control interconnect provided on the front surface of the semiconductor part with the fourth insulating part interposed, the control interconnect being provided apart from the second electrode, the control interconnect including a contact portion, the contact portion extending into the third insulating film and the fourth insulating part and contacting the control electrode, the control electrode being electrically connected to the control interconnect via the contact portion.
6. The device according to claim 4 , wherein
the second electrode includes a contact portion extending into the third insulating film and the fourth insulating part, the contact portion contacting the third electrode, and
the third electrode is electrically connected to the second electrode via the contact portion.
7. The device according to claim 4 , wherein
the control electrode is provided between the second electrode and the third electrode.
8. The device according to claim 7 , wherein
the third insulating part further includes a fourth insulating film provided between the third electrode and the second portion of the third insulating film.
9. The device according to claim 8 , wherein
the fourth insulating film is a silicon oxide film.
10. The device according to claim 4 , wherein
the control electrode includes a first portion provided between the second electrode and the third electrode, and a second portion provided between the third electrode and the second semiconductor layer of the semiconductor part.
11. The device according to claim 10 , wherein
the second insulating film includes first and second portions, the first portion being provided between the first insulating film and the third electrode, the second portion being provided between the third electrode and the second portion of the control electrode,
the second portion of the third insulating film extends between the second portion of the control electrode and the second portion of the second insulating film, and
the third insulating part further includes the second portion of the second insulating film.
12. The device according to claim 11 , wherein
the third insulating part further includes a fourth insulating film provided between the third electrode and the second portion of the third insulating film,
the second portion of the second insulating film is provided between the third electrode and the second portion of the control electrode and between the fourth insulating film and the second portion of the control electrode, and
the second portion of the third insulating film is provided between the control electrode and the second portion of the second insulating film and between the control electrode and the fourth insulating film.
13. The device according to claim 12 , wherein the fourth insulating film is a silicon oxide film.