Package substrate inductor having thermal interconnect structures
Embodiments include a microelectronic device package structure having an inductor within a portion of a substrate, wherein a surface of the inductor is substantially coplanar with a surface of the substrate. One or more thermal interconnect structures are on the surface of the inductor. A conductive feature is embedded within a board, where a surface of the conductive feature is substantially coplanar with a surface of the board. One or more thermal interconnect structures are on the surface of the conductive feature of the board, where the thermal interconnect structures provide a thermal pathway for cooling for the inductor.
1. A microelectronic package structure comprising:
a substrate;
a die on a first side of the substrate, the die comprising an integrated circuit;
an inductor, wherein the inductor comprises a first side and a second side opposite the first side, wherein the second side is at least partially embedded in the substrate, and wherein the first side of the inductor is substantially coplanar with a surface of the second side of the substrate, wherein the inductor comprises a first conductive layer over a second conductive layer coupled to each other by a conductive via structure;
a board, wherein a first side of the board is physically and electrically coupled to the second side of the substrate;
a board conductive feature, wherein a first side of the board conductive feature is substantially coplanar with the first side of the board, and wherein a second side of the board conductive feature is at least partially embedded within the board, wherein the board conductive feature comprises a first board conductive layer over a second board conductive layer, wherein the first conductive layer of the inductor is substantially coplanar with the second side of the substrate, and wherein the first board conductive layer is substantially coplanar with the first side of the board, and wherein a thickness of the first conductive layer of the inductor is substantially the same as a thickness of the first board conductive layer; and
one or more thermally conductive structures between the first side of the inductor and the first side of the board conductive feature, wherein the inductor is thermally coupled to the board conductive feature.
2. The microelectronic device package structure of claim 1 , wherein the first conductive layer of the inductor and the first board conductive layer are within a footprint of the die.
3. The microelectronic package structure of claim 1 , wherein the first conductive layer of the inductor comprises a length that is substantially equal to a length of the first board conductive layer.
4. The microelectronic package structure of claim 1 , wherein the first board conductive layer is a mirror image of the first conductive layer of the inductor, wherein the mirror image is a reflection through a central portion of the one or more thermally conductive structures.
5. The microelectronic package structure of claim 1 , wherein a sidewall of the first conductive layer of the inductor is in alignment with a sidewall of the first board conductive layer.
6. The microelectronic package structure of claim 1 , wherein the die includes a portion of a voltage regulator, and wherein the inductor is electrically coupled to the voltage regulator.
7. The microelectronic package structure of claim 1 wherein the one or more thermally conductive structures are within a footprint of the die.
8. A microelectronic package structure comprising:
a substrate;
a die on a first side of the substrate, the die comprising an integrated circuit;
an inductor, wherein the inductor comprises a first side and a second side opposite the first side, wherein the second side is at least partially embedded in the substrate, and wherein the first side of the inductor is substantially coplanar with a surface of the second side of the substrate, wherein the inductor comprises a first conductive layer over a second conductive layer coupled to each other by a conductive via structure;
a board, wherein a first side of the board is physically and electrically coupled to the second side of the substrate;
a board conductive feature, wherein a first side of the board conductive feature is substantially coplanar with the first side of the board, and wherein a second side of the board conductive feature is at least partially embedded within the board, wherein the board conductive feature comprises a first board conductive layer over a second board conductive layer, wherein the first conductive layer of the inductor is substantially coplanar with the second side of the substrate, and wherein the first board conductive layer is substantially coplanar with the first side of the board, and wherein a thickness of the first conductive layer of the inductor is substantially the same as a thickness of the first board conductive layer; and
one or more metallic structures between the first side of the inductor and the first side of the board conductive feature, wherein the inductor is thermally coupled to the board conductive feature.
9. The microelectronic device package structure of claim 8 , wherein the first conductive layer of the inductor and the first board conductive layer are within a footprint of the die.
10. The microelectronic package structure of claim 8 , wherein the first conductive layer of the inductor comprises a length that is substantially equal to a length of the first board conductive layer.
11. The microelectronic package structure of claim 8 , wherein the first board conductive layer is a mirror image of the first conductive layer of the inductor, wherein the mirror image is a reflection through a central portion of the one or more metallic structures.
12. The microelectronic package structure of claim 8 , wherein a sidewall of the first conductive layer of the inductor is in alignment with a sidewall of the first board conductive layer.
13. The microelectronic package structure of claim 8 , wherein the die includes a portion of a voltage regulator, and wherein the inductor is electrically coupled to the voltage regulator.
14. The microelectronic package structure of claim 8 wherein the one or more metallic structures are within a footprint of the die.