IP Library › Granted Patent US 11,693,295
Granted Patent B2
US 11,693,295 · App. 16/850,867 · Granted Jul 4, 2023

Auto-focusing device and method of fabricating the same

Inventors: Ting-Jung Chen (Kaohsiung, TW); Shih-Wei Lin (Hsinchu, TW)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
G03B13/36G02B7/09H04N23/67H10N30/03H10N30/07B81B2201/03G03B2205/0053H10N30/01
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Quick Facts
Patent No.
US 11,693,295
App. No.
16/850,867
Granted
Jul 4, 2023
Kind
B2
Abstract

In accordance with some embodiments, a method of forming an auto-focusing device is provided. The method includes forming a cantilever beam member. The cantilever beam member has a ring shape. The method further includes forming a piezoelectric member over the cantilever beam member. The method also includes forming a membrane over the cantilever beam member. The membrane has a first region and a second region. The first region has a planar surface, and the second region is located between the first region and an inner edge of the cantilever beam member and has a plurality of corrugation structures. In addition, the method includes applying a liquid optical medium over the membrane and sealing the liquid optical medium with a protection layer.

Claims (44)

1. A method, comprising:

forming a supporting layer on a base layer, wherein the supporting layer has a central region and a peripheral region surrounding the central region;

forming a dielectric layer on the supporting layer;

forming a piezoelectric member on the dielectric layer above the peripheral region of the supporting layer in a stacking direction;

patterning the dielectric layer to form a first projection and a second projection in the central region of the supporting layer;

covering the dielectric layer with a membrane, wherein the membrane is conformally formed over the first projection and the second projection;

applying a liquid optical medium over the membrane and sealing the liquid optical medium with a protection layer; and

etching the base layer, the supporting layer and the patterned dielectric layer to expose the membrane.

2. The method of claim 1 , wherein patterning the dielectric layer is performed such that the first projection and the second projection are each formed with a ring shape and are concentrically arranged.

3. The method of claim 1 , wherein patterning the dielectric layer is performed such that the first projection and the second projection are spaced apart by a distance that is greater than a width of each of the first projection and the second projection.

4. The method of claim 1 , wherein patterning the dielectric layer is performed such that the second projection is closer to the peripheral region than the first projection, and the second projection is spaced away from a boundary of the central region and the peripheral region of the supporting layer by a predetermined distance that is greater than 0.

5. The method of claim 1 , wherein patterning the dielectric layer is performed such that the first projection comprises:

a first side wall inclined relative to the supporting layer;

a second side wall opposite to the first side wall and inclined relative to the supporting layer; and

a top surface connecting the first side wall to the second side wall and being parallel to the supporting layer.

6. The method of claim 1 , wherein patterning the dielectric layer to form the first projection and the second projection is performed such that each of the first projection and the second projection is formed with a tapered shape.

7. The method of claim 1 , wherein patterning the dielectric layer to form the first projection and the second projection is performed such that each of the first projection and the second projection is formed with a height of about 2 um to about 15 um.

8. A method, comprising:

forming a supporting layer on a base layer, wherein the supporting layer has a central region and a peripheral region surrounding the central region;

forming a dielectric layer over the supporting layer;

forming a piezoelectric member on the dielectric layer above the peripheral region of the supporting layer in a stacking direction;

patterning the dielectric layer to form a first projection and a second projection in the central region of the supporting layer;

covering the patterned dielectric layer with a membrane, wherein a first portion of the membrane on a center of the central region of the supporting layer has a top surface lower than a top surface of a second portion of the membrane on the first projection;

applying a liquid optical medium over the membrane and sealing the liquid optical medium with a protection layer; and

etching the base layer, the supporting layer, the first projection, and the second projection to expose the membrane.

9. The method of claim 8 , wherein the top surface of the first portion of the membrane on the center of the central region of the supporting layer is lower than a top surface of a third portion of the membrane on the second projection.

10. The method of claim 8 , wherein etching the base layer, the supporting layer, the first projection, and the second projection is such that a remaining portion of the supporting layer covers a portion of the dielectric layer on the peripheral region but exposes the second portion of the membrane.

11. The method of claim 8 , wherein an interface between the liquid optical medium and the first portion of the membrane is at a height different from a height of an interface between the liquid optical medium and the second portion of the membrane.

12. The method of claim 8 , wherein covering the dielectric layer with the membrane is such that the top surface of the second portion of the membrane is lower than a top surface of the piezoelectric member.

13. The method of claim 8 , wherein covering the dielectric layer with the membrane is such that the membrane is in contact with a sidewall of the dielectric layer on the peripheral region.

14. The method of claim 8 , wherein covering the dielectric layer with the membrane is such that a third portion of the membrane is directly between the first projection and the second projection.

15. A method, comprising:

forming a supporting layer on a base layer, wherein the supporting layer has a central region and a peripheral region surrounding the central region;

forming a dielectric layer on the supporting layer;

forming a piezoelectric member on the dielectric layer above the peripheral region of the supporting layer in a stacking direction;

patterning the dielectric layer to form a first projection and a second projection in the central region of the supporting layer;

forming a membrane to cover the piezoelectric member, the first projection and the second projection, wherein a first portion of the membrane between the first projection and the second projection has a top surface lower than a top surface of a second portion of the membrane on the first projection;

applying a liquid optical medium over the membrane and sealing the liquid optical medium with a protection layer; and

etching the base layer, the supporting layer, the first projection, and the second projection to expose the membrane.

16. The method of claim 15 , further comprising forming a passivation layer over the piezoelectric member, the first projection, and the second projection prior to forming the membrane.

17. The method of claim 16 , further comprising forming a trace over the passivation layer and in contact with the piezoelectric member prior to forming the membrane.

18. The method of claim 15 , wherein the first projection is spaced apart from a center of the central region of the supporting layer.

19. The method of claim 15 , wherein the first projection and the second projection are ring-shaped in a top view.

20. The method of claim 15 , wherein applying the liquid optical medium over the membrane is such that a vertical thickness of a first portion of the liquid optical medium directly above the first projection is greater than a vertical thickness of a second portion of the liquid optical medium directly above the piezoelectric member.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 19, 2020
From: CHEN, TING-JUNG; LIN, SHIH-WEI
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 052435/0909 →
Continuity (2)
Provisional Application 62868571 · Jun 28, 2019
Related Publication 20200409238A1 · Dec 31, 2020