Spin wave switch and filter based on magnonic crystal
View Patent ↗The present disclosure relates to a spin wave switch and a filter based on a magnonic crystal. According to one embodiment, a magnonic crystal device may include a ferromagnetic layer and an antiferromagnetic planar periodic structure set on the ferromagnetic layer. The magnonic crystal device of the present disclosure may be used as a spin wave switch to effectively regulate and control the transmission coefficient of the spin wave, or may be used as a spin wave filter to filter the spin wave of a specific frequency.
1. A magnonic crystal device, comprising:
a ferromagnetic layer;
an antiferromagnetic planar periodic structure set on the ferromagnetic layer; and
a spin Hall effect layer set on one side of the ferromagnetic layer opposite to the antiferromagnetic planar periodic structure and in contact with the ferromagnetic layer, and used to switch a magnetization of the ferromagnetic layer.
2. The magnonic crystal device of claim 1 , wherein the antiferromagnetic planar periodic structure comprises:
a plurality of antiferromagnetic strip-like structures that extend along a first direction and are periodically arranged along a second direction perpendicular to the first direction; or
a plurality of antiferromagnetic dot-like structures arranged in a two-dimensional array.
3. The magnonic crystal device of claim 2 , wherein the antiferromagnetic strip-like structure has a rectangular, square, triangular, trapezoidal or semicircular cross-section shape, or
the antiferromagnetic dot-like structure has a circular, ring, polygonal or hollow polygonal shape.
4. The magnonic crystal device of claim 1 , wherein a periodic number N of the antiferromagnetic planar periodic structure is more than 5, and a width of each structural unit in the antiferromagnetic planar periodic structure is between 100 μm and 3 nm, a spacing between two adjacent structural units being also between 100 μm and 3 nm, correspondingly, a working frequency of the magnonic crystal device may be between 0.5 GHz and 1THz.
5. The magnonic crystal device of claim 1 , wherein the ferromagnetic layer has a thickness of 0.5 nm to 15 nm, and the antiferromagnetic planar periodic structure has a thickness from lnm to 15 nm.
6. A spin wave switch, which comprises a magnonic crystal device including a ferromagnetic layer and an antiferromagnetic planar periodic structure set on the ferromagnetic layer,
wherein the magnonic crystal device further comprises a spin Hall effect layer set on one side of the ferromagnetic layer opposite to the antiferromagnetic planar periodic structure and in contact with the ferromagnetic layer, and used to switch a magnetization of the ferromagnetic layer.
7. The spin wave switch of claim 6 , wherein a frequency of a spin wave turned on or turned off by the spin wave switch is within a range of 0.5 GHz to 1THz.
8. The spin wave switch of claim 6 , wherein the antiferromagnetic planar periodic structure comprises:
a plurality of antiferromagnetic strip-like structures that extend along a first direction and are periodically arranged along a second direction perpendicular to the first direction; or
a plurality of antiferromagnetic dot-like structures arranged in a two-dimensional array.
9. The spin wave switch of claim 8 , wherein the antiferromagnetic strip-like structure has a rectangular, square, triangular, trapezoidal or semicircular cross-section shape, or
the antiferromagnetic dot-like structure has a circular, ring, polygonal or hollow polygonal shape.
10. The spin wave switch of claim 6 , wherein a periodic number N of the antiferromagnetic planar periodic structure is more than 5, and a width of each structural unit in the antiferromagnetic planar periodic structure is between 100 μm and 3 nm, a spacing between two adjacent structural units being also between 100 μm and 3 nm, correspondingly, a working frequency of the magnonic crystal device may be between 0.5 GHz and 1THz.
11. The spin wave switch of claim 6 , wherein the ferromagnetic layer has a thickness of 0.5 nm to 15 nm, and the antiferromagnetic planar periodic structure has a thickness from 1 nm to 15 nm.
12. A spin wave filter, which comprises a magnonic crystal device including a ferromagnetic layer and an antiferromagnetic planar periodic structure set on the ferromagnetic layer,
wherein the magnonic crystal device further comprises a spin Hall effect layer set on one side of the ferromagnetic layer opposite to the antiferromagnetic planar periodic structure and in contact with the ferromagnetic layer, and used to switch a magnetization of the ferromagnetic layer.
13. The spin wave filter of claim 12 , wherein the ferromagnetic layer has a thickness of 0.5 nm to 15 nm, and the antiferromagnetic planar periodic structure has a thickness from 1 nm to 15 nm.
14. The spin wave filter of claim 12 , wherein a frequency of a spin wave filtered by the spin wave filter is within a range of 0.5 GHz to 1THz.
15. The spin wave filter of claim 12 , wherein the antiferromagnetic planar periodic structure comprises:
a plurality of antiferromagnetic strip-like structures that extend along a first direction and are periodically arranged along a second direction perpendicular to the first direction; or
a plurality of antiferromagnetic dot-like structures arranged in a two-dimensional array.
16. The spin wave filter of claim 15 , wherein the antiferromagnetic strip-like structure has a rectangular, square, triangular, trapezoidal or semicircular cross-section shape, or
the antiferromagnetic dot-like structure has a circular, ring, polygonal or hollow polygonal shape.
17. The spin wave filter of claim 12 , wherein a periodic number N of the antiferromagnetic planar periodic structure is more than 5, and a width of each structural unit in the antiferromagnetic planar periodic structure is between 100 μm and 3 nm, a spacing between two adjacent structural units being also between 100 μm and 3 nm, correspondingly, a working frequency of the magnonic crystal device may be between 0.5 GHz and 1THz.