Semiconductor die and method of manufacturing the same

1. A semiconductor die, comprising:

a semiconductor body comprising an active region;

a transistor device in the active region that comprises a source region extending to an upper surface of the semiconductor body and a drain region extending to a rear surface of the semiconductor body;

an insulation layer on the semiconductor body; and

a sodium stopper formed in the insulation layer,

wherein the sodium stopper is arranged in an insulation layer groove which intersects the insulation layer vertically and extends around and outside of the active region,

wherein the sodium stopper is formed of a tungsten material filling the insulation layer groove, and

wherein in an edge termination region where the sodium stopper is formed, the semiconductor body immediately below the insulation layer is at a same potential as the drain region.

2. The semiconductor die of claim 1 , further comprising:

a metallization layer on a frontside of the insulation layer,

wherein the metallization layer covers at least a section of the insulation layer groove and is formed of a tungsten material.

3. The semiconductor die of claim 2 , further comprising:

a passivation layer covering the metallization layer.

4. The semiconductor die of claim 1 , wherein in the edge termination region where the sodium stopper is formed, the semiconductor body comprises a further drain region that is connected to the drain region from the transistor device, and wherein the tungsten material filling the insulation layer groove forms also a drain contact in ohmic contact with the further drain region.

5. The semiconductor die of claim 1 , further comprising:

a channel stopper in a channel stopper trench extending vertically into the semiconductor body,

wherein the channel stopper is arranged laterally between the sodium stopper and a lateral edge of the semiconductor die.

6. The semiconductor die of claim 1 , further comprising:

a chipping stopper in a chipping stopper trench extending vertically into the semiconductor body.

7. The semiconductor die of claim 6 , wherein the chipping stopper trench is filled with an electrically conductive material and serves also as a channel stopper.

8. The semiconductor die of claim 1 , further comprising:

a channel stopper in a channel stopper trench extending vertically into the semiconductor body; and

a chipping stopper in a chipping stopper trench extending vertically into the semiconductor body,

wherein the channel stopper is arranged laterally between the sodium stopper and a lateral edge of the semiconductor die.

9. The semiconductor die of claim 8 , wherein the chipping stopper trench extends deeper into the semiconductor body than the channel stopper trench.

10. The semiconductor die of claim 8 , wherein the chipping stopper trench is filled with an electrically conductive material and serves also as a channel stopper.

11. The semiconductor die of claim 6 , further comprising:

a vertical groove intersecting the insulation layer above the chipping stopper trench,

wherein the vertical groove serves as an oxide peeling stopper.

12. A semiconductor wafer, comprising:

a semiconductor body comprising a first active region and a second active region;

an insulation layer on the semiconductor body;

a dicing region formed laterally between the first active region and the second active region;

a first sodium stopper and a second sodium stopper formed in the insulation layer,

wherein the first sodium stopper is arranged in a first insulation layer groove which intersects the insulation layer vertically and extends around the first active region,

wherein the second sodium stopper is arranged in a second insulation layer groove which intersects the insulation layer vertically and extends around the second active region,

wherein the first sodium stopper is formed of a tungsten material filling the first insulation layer groove,

wherein the second sodium stopper is formed of a tungsten material filling the second insulation layer groove,

wherein each of the first active region and the second active region comprise a transistor device that comprises a source region extending to an upper surface of the semiconductor body and a drain region extending to a rear surface of the semiconductor body,

wherein in a region wherein the first sodium stopper is formed, the semiconductor body immediately below the insulation layer is at a same potential as the drain region of the transistor device from the first active region, and

wherein in a region wherein the second sodium stopper is formed, the semiconductor body immediately below the insulation layer is at a same potential as the drain region of the transistor device from the second active region.

13. The semiconductor wafer of claim 12 , further comprising:

a first trench and a second trench arranged in the dicing region,

wherein the first trench extends deeper into the semiconductor body than the second trench.

14. The semiconductor wafer of claim 13 , wherein the first trench has the same depth as field electrode trenches formed in the first active region and the second active region, and wherein the second trench has the same depth as gate trenches formed in the first active region and the second active region.

15. The semiconductor wafer of claim 13 , wherein the first trench is a needle trench and the second trench is a longitudinal trench surrounding the needle trench.