Method to form air gap structure with dual dielectric layer
Embodiments of the disclosure provide a method to form an air gap structure. An opening is formed in a first dielectric layer between adjacent conductors. A first dielectric layer is formed over the opening to fill a first portion of the opening. A remainder of the opening is free of the first dielectric layer. A second dielectric layer is formed on a top surface of the first dielectric layer, with a remainder of the opening unfilled. The second dielectric layer is devoid of wiring. The remainder of the opening below the second dielectric layer defines an air gap structure. A wiring layer is formed above the air gap structure.
1. A method comprising:
forming an opening in a dielectric layer between adjacent conductors;
forming a dual dielectric layer over the dielectric layer, the dual dielectric layer including:
forming a first dielectric layer over the opening to fill a first portion of the opening, wherein a remainder of the opening is free of the first dielectric layer;
forming a second dielectric layer on a top surface of the first dielectric layer, leaving a remainder of the opening unfilled, wherein the second dielectric layer is devoid of wiring, and wherein the remainder of the opening below the second dielectric layer defines an air gap structure; and
forming a wiring layer above the air gap structure.
2. The method of claim 1 , wherein forming the first dielectric layer includes depositing a silane-based silicon dioxide.
3. The method of claim 2 , wherein forming the second dielectric layer includes depositing one of: tetraethyl orthosilicate (TEOS) based silicon dioxide and fluorinated TEOS (FTEOS) based silicon dioxide.
4. The method of claim 1 , wherein the second dielectric layer includes carbon (C).
5. The method of claim 1 , wherein a portion of the second dielectric layer separates a lower surface of the wiring layer from a sealing point of the air gap structure.
6. The method of claim 1 , wherein the first dielectric layer includes a non-conformal dielectric material.
7. The method of claim 6 , wherein the second dielectric layer includes a conformal dielectric material.
8. The method of claim 1 , wherein forming the second dielectric layer seals the air gap structure within the first dielectric layer.
9. A method comprising:
forming an opening in a dielectric layer between adjacent conductors;
forming a dual dielectric layer over the dielectric layer, the dual dielectric layer including:
forming a first dielectric layer over the opening to close an end portion of the opening, creating a seam above a non-filled portion of the opening in the first dielectric layer;
forming a second dielectric layer on the first dielectric layer to seal the seam in the first dielectric layer, wherein the second dielectric layer is devoid of wiring, and wherein the non-filled portion of the opening defines an air gap structure; and
forming a wiring layer above the air gap structure.
10. The method of claim 9 , wherein forming the first dielectric layer includes depositing a silane-based silicon dioxide, and forming the second dielectric layer includes depositing one of: tetraethyl orthosilicate (TEOS) based silicon dioxide and fluorinated TEOS (FTEOS) based silicon dioxide.
11. The method of claim 9 , wherein the first dielectric layer includes a non-conformal dielectric material, and the second dielectric layer includes a conformal dielectric material.
12. The method of claim 10 , wherein the seam has a horizontal length between approximately 100 and approximately 160 nanometers.
13. The method of claim 10 , wherein the second dielectric layer includes carbon (C).
14. The method of claim 10 , wherein a portion of the second dielectric layer separates a lower surface of the wiring layer from a sealing point of the air gap structure.
15. A method, comprising:
forming an air gap structure, including:
forming an opening in a dielectric layer between adjacent conductors;
forming a non-conformal dielectric layer over an end portion of the opening to one of: a) in a first option, leaving the end portion open, and b) in a second option, close the end portion of the opening such that the non-conformal dielectric creates a seam therein over the end portion of the opening;
forming a conformal dielectric layer on the non-conformal dielectric layer to one of:
in the first option where the end portion remains open, seal the end portion of the opening to form the air gap structure, and
in the second option where the seam is created in the non-conformal dielectric layer, seal the seam in the non-conformal dielectric layer to form the air gap structure,
wherein the conformal dielectric layer is devoid of wiring; and
forming a wiring layer over the air gap structure.
16. The method of claim 15 , wherein forming the non-conformal dielectric layer includes depositing a silane-based silicon dioxide.
17. The method of claim 16 , wherein forming the conformal dielectric layer includes depositing one of: tetraethyl orthosilicate (TEOS) based silicon dioxide and fluorinated TEOS (FTEOS) based silicon dioxide.
18. The method of claim 15 , wherein in the second option where the seam is created in the non-conformal dielectric layer, the seam has a horizontal length between approximately 100 and approximately 160 nanometers.
19. The method of claim 15 , wherein the conformal dielectric layer includes carbon (C).
20. The method of claim 15 , wherein a lower surface of the wiring layer is distanced from a sealing point of the air gap structure by at least a portion of the conformal dielectric layer.