Photodiode array

1. A photodiode array comprising:

an insulating substrate;

a plurality of photodiodes arrayed in a detection region of the insulating substrate, each of the photodiodes configured to output a signal in accordance with light incident on each of the photodiodes;

first switching elements, each corresponding to each of the photodiodes and including a first semiconductor made of oxide semiconductor;

a plurality of gate lines coupled with the first switching elements and extending in a first direction;

a plurality of signal lines coupled with the first switching elements and extending in a second direction intersecting the first direction; and

a gate line drive circuit including a second switching element that includes a second semiconductor made of polycrystalline silicone, the gate line drive circuit being provided in a peripheral region outside the detection region and configured to drive the gate lines, wherein each of the photodiodes includes a translucent conductive layer that is a cathode, and

the translucent conductive layer overlaps none of the signal lines in a plan view.

2. The photodiode array according to claim 1 , the translucent conductive layer is electrically coupled with a common power source signal line through coupling wires.

3. The photodiode array according to claim 2 , wherein the common power source signal line overlaps one of the signal lines in the plan view.

4. The photodiode array according to claim 1 , further comprising a signal line selection circuit configured to sequentially select each signal line and couple the signal line with an analog front-end circuit, wherein the signal line selection circuit includes a third switching element including a semiconductor made of polycrystalline silicone.

5. The photodiode array according to claim 1 ,

wherein a distance between the first semiconductor and the insulating substrate is larger than a distance between the second semiconductor and the insulating substrate in a direction orthogonal to a main surface of the insulating substrate.

6. The photodiode array according to claim 1 , wherein

each of the first switching elements includes a source electrode and a drain electrode,

the source electrode is provided above the first semiconductor with an insulating layer interposed therebetween and electrically coupled with the first semiconductor through a first contact hole provided to the insulating layer, and

a first conductive layer provided in a region overlapping at least a bottom part of the first contact hole and in contact with the first semiconductor is provided between the first semiconductor and the source electrode.

7. The photodiode array according to claim 6 , wherein

the drain electrode is provided above the first semiconductor with the insulating layer interposed therebetween and electrically coupled with the first semiconductor through a second contact hole provided to the insulating layer, and

a second conductive layer provided in a region overlapping at least a bottom part of the second contact hole and in contact with the first semiconductor is provided between the first semiconductor and the drain electrode.

8. The photodiode according to claim 7 , wherein

the drain electrode is a third conductive layer provided above the first semiconductor, and

the third conductive layer is electrically coupled with an anode of one of the photodiodes and provided between the one of photodiodes and a gate electrode of corresponding one of the first switching elements in a direction orthogonal to a main surface of the insulating substrate.

9. The photodiode array according to claim 8 , wherein

a fourth conductive layer is provided between the second conductive layer and the third conductive layer,

capacitance is generated between the second conductive layer and the fourth conductive layer, and

capacitance is generated between the third conductive layer and the fourth conductive layer.

10. The photodiode array according to claim 1 , further comprising a flattening layer covering the first switching elements and the second switching element, wherein the photodiodes are provided on the flattening layer.

11. The photodiode array according to claim 1 , wherein

a drain electrode of each of the first switching elements is a third conductive layer provided above the first semiconductor, and

the third conductive layer serves as an anode of corresponding one of the photodiodes.

12. The photodiode array according to claim 1 , further comprising an inorganic insulating layer covering the first switching elements and the second switching element, wherein the photodiodes are provided on the inorganic insulating layer.

13. The photodiode array according to claim 12 , wherein

a drain electrode of each of the first switching elements is a third conductive layer provided above the first semiconductor, and

an anode of corresponding one of the photodiodes is electrically coupled with the third conductive layer through a contact hole provided to the inorganic insulating layer.

14. The photodiode array according to claim 13 , wherein a fourth conductive layer is provided between the third conductive layer and the anode.

15. The photodiode array according to claim 1 , wherein partial detection regions including corresponding one of the respective photodiodes and corresponding one of the first switching elements are provided in a matrix having a row-column configuration in the detection region.

16. A display apparatus comprising:

the photodiode array according to claim 1 ; and

a display panel including a display element for displaying an image and disposed opposite to the photodiode array.