Power semiconductor module and power conversion apparatus including the same

1. A power semiconductor module comprising:

at least one upper arm between a positive electrode line and an output node and including a power semiconductor device and a freewheeling diode connected in antiparallel;

at least one lower arm between a negative electrode line and the output node and including a power semiconductor device and a freewheeling diode connected in antiparallel;

a snubber circuit between the positive electrode line and the negative electrode line, the snubber circuit including a snubber capacitor and a snubber resistor connected in series;

a temperature detector inside of the power semiconductor module and adjacent to the snubber resistor to detect a temperature of the snubber resistor; and

at least one control terminal to output a voltage representing temperature of the snubber resistor or a voltage related to temperature of the snubber resistor to a driver that drives the power semiconductor device, the at least one control terminal including a first control terminal to output the voltage representing the temperature detected by the temperature detector,

wherein the output node is different from the at least one control terminal.

2. A power conversion apparatus comprising:

the power semiconductor module of claim 1 ;

a comparator to compare the voltage representing temperature with a reference voltage; and

a driving capability adjustor to change at least one of a magnitude of an on-gate resistor at a time of turn-on of the power semiconductor device and a magnitude of an off-gate resistor at a time of turn-off of the power semiconductor device, in accordance with an output signal of the comparator.

3. A power conversion apparatus comprising:

the power semiconductor module of claim 1 ;

a comparator to compare the voltage representing temperature with a reference voltage; and

a switching frequency adjustor to change a number of times of switching operations per unit time of the power semiconductor device, in accordance with an output signal of the comparator.

4. The power semiconductor module according to claim 1 , comprising:

a positive electrode conductor pattern on which the at least one upper arm is mounted;

an output conductor pattern on which the at least one lower arm is mounted;

a negative electrode conductor pattern; and

an intermediate electrode pattern, wherein

the at least one upper arm is connected to the output conductor pattern,

the at least one lower arm is connected to the negative electrode conductor pattern,

one of the snubber capacitor and the snubber resistor is mounted between the positive electrode conductor pattern and the intermediate electrode pattern,

the other of the snubber capacitor and the snubber resistor is mounted between the intermediate electrode pattern and the negative electrode conductor pattern, and

the temperature detector is mounted in proximity to the snubber resistor on the intermediate electrode pattern.

5. The power semiconductor module according to claim 1 , comprising:

a positive electrode conductor pattern on which the at least one upper arm is mounted;

an output conductor pattern on which the at least one lower arm is mounted;

a negative electrode conductor pattern;

a first intermediate electrode pattern;

a second intermediate electrode pattern; and

a third intermediate electrode pattern, wherein

the at least one upper arm is connected to the output conductor pattern,

the at least one lower arm is connected to the negative electrode conductor pattern,

the positive electrode conductor pattern and the first relay electrode pattern are connected,

one of the snubber capacitor and the snubber resistor is mounted between the first intermediate relay electrode pattern and the second relay electrode pattern,

the other of the snubber capacitor and the snubber resistor is mounted between the second intermediate relay electrode pattern and the third intermediate relay electrode pattern,

the third intermediate relay electrode pattern and the negative electrode conductor pattern are connected, and

the temperature detector is mounted in proximity to the snubber resistor on the first intermediate electrode pattern, the second intermediate electrode pattern, or the third intermediate electrode pattern.

6. The power semiconductor module according to claim 1 comprising:

a positive electrode conductor pattern on which the at least one upper arm is mounted;

an output conductor pattern on which the at least one lower arm is mounted;

a negative electrode conductor pattern;

a first intermediate electrode pattern;

a second intermediate electrode pattern;

a third intermediate electrode pattern; and

a fourth intermediate electrode pattern on which the first intermediate electrode pattern, the second intermediate electrode pattern, and the third intermediate electrode pattern are mounted, wherein

the at least one upper arm is connected to the output conductor pattern,

the at least one lower arm is connected to the negative electrode conductor pattern,

the positive electrode conductor pattern and the first relay electrode pattern are connected,

one of the snubber capacitor and the snubber resistor is mounted between the first intermediate relay electrode pattern and the second intermediate relay electrode pattern,

the other of the snubber capacitor and the snubber resistor is mounted between the second intermediate relay electrode pattern and the third intermediate relay electrode pattern,

the third intermediate refer electrode pattern and the negative electrode conductor pattern are connected,

the fourth intermediate electrode pattern is mounted on any of the positive electrode conductor pattern, the negative electrode conductor pattern, and the output conductor pattern, and

the temperature detector is mounted in proximity to the snubber resistor on the first intermediate electrode pattern, the second intermediate electrode pattern, or the third intermediate electrode pattern.

7. The power semiconductor module according to claim 1 , comprising:

a positive electrode conductor pattern on which the at least one upper arm is mounted;

an output conductor pattern on which the at least one lower arm is mounted;

a negative electrode conductor pattern;

a first intermediate electrode pattern;

a second intermediate electrode pattern;

a third intermediate electrode pattern; and

an insulating substrate on which the first intermediate electrode pattern, the second intermediate electrode pattern, and the third intermediate electrode pattern are mounted, wherein

the at least one upper arm is connected to the output conductor pattern,

the at least one lower arm is connected to the negative electrode conductor pattern,

the positive electrode conductor pattern and the first intermediate electrode pattern are connected,

one of the snubber capacitor and the snubber resistor is mounted between the first intermediate relay electrode pattern and the second intermediate relay electrode pattern,

the other of the snubber capacitor and the snubber resistor is mounted between the second intermediate electrode pattern and the third intermediate electrode pattern, the third intermediate electrode pattern and the negative electrode conductor pattern are connected, and

the temperature detector is mounted in proximity to the snubber resistor on the first intermediate electrode pattern, the second intermediate relay electrode pattern, or the third intermediate electrode pattern.

8. The power semiconductor module according to claim 1 ,

wherein the snubber capacitor of the snubber circuit is directly connected to the positive electrode line, and/or

wherein the snubber resistor of the snubber circuit is directly connected to the negative electrode line.

9. The power semiconductor module according to claim 1 ,

wherein the at least one upper arm includes a plurality of upper arms each between the positive electrode line and the output node and including the power semiconductor device and the freewheeling diode connected in antiparallel,

wherein the at least one lower arm includes a plurality of lower arms each between the negative electrode line and the output node and including the power semiconductor device and the freewheeling diode connected in antiparallel, and

wherein the snubber resistor is the only snubber resistor of the power semiconductor module.

10. A power semiconductor module comprising:

at least one upper arm between a positive electrode line and an output node and including a power semiconductor device and a freewheeling diode connected in antiparallel;

at least one lower arm between a negative electrode line and the output node and including a power semiconductor device and a freewheeling diode connected in antiparallel;

a snubber circuit connected directly to the positive electrode line and the negative electrode line, the snubber circuit including a snubber capacitor and a snubber resistor connected in series; and

a first control terminal and a second control terminal to output a voltage across the snubber resistor to a driver external to the power semiconductor module,

wherein the output node is different from the first control terminal and the second control terminal.

11. A power conversion apparatus comprising:

the power semiconductor module of claim 10 ;

a differential amplifier circuit to differentially amplify a voltage across the snubber resistor;

a comparator to compare the differentially-amplified voltage with a reference voltage; and

a driving capability adjustor to change at least one of a magnitude of an on-gate resistor at a time of turn-on of the power semiconductor device and a magnitude of an off-gate resistor at a time of turn-off of the power semiconductor device, in accordance with an output signal of the comparator.

12. A power conversion apparatus comprising:

the power semiconductor module of claim 10 ,

a differential amplifier circuit to differentially amplify a voltage across the snubber resistor;

a comparator to compare the differentially-amplified voltage with a reference voltage; and

a switching frequency adjustor to change a number of times of switching operations per unit time of the power semiconductor device, in accordance with an output signal of the comparator.

13. The power semiconductor module according to claim 10 ,

wherein the snubber capacitor of the snubber circuit is directly connected to the positive electrode line, and/or

wherein the snubber resistor of the snubber circuit is directly connected to the negative electrode line.

14. The power semiconductor module according to claim 10 ,

wherein the at least one upper arm includes a plurality of upper arms each between the positive electrode line and the output node and including the power semiconductor device and the freewheeling diode connected in antiparallel,

wherein the at least one lower arm includes a plurality of lower arms each between the negative electrode line and the output node and including the power semiconductor device and the freewheeling diode connected in antiparallel, and

wherein the snubber resistor is the only snubber resistor of the power semiconductor module.

15. A power semiconductor module comprising:

at least one upper arm between a positive electrode line and an output node and including a power semiconductor device and a freewheeling diode connected in antiparallel;

at least one lower arm between a negative electrode line and the output node and including a power semiconductor device and a freewheeling diode connected in antiparallel;

a snubber circuit between the positive electrode line and the negative electrode line, the snubber circuit including a snubber capacitor and a snubber resistor connected in series;

a shunt resistor connected in series with the snubber circuit, between the positive electrode line and the negative electrode line; and

a first control terminal and a second control terminal to output a voltage across the shunt resistor,

wherein the output node is different from the first control terminal and the second control terminal.

16. A power conversion apparatus comprising:

the power semiconductor module of claim 15 ;

a differential amplifier circuit to differentially amplify a voltage across the snubber resistor;

a comparator to compare the differentially-amplified voltage with a reference voltage; and

a driving capability adjustor to change at least one of the magnitude of an on-gate resistor at a time of turn-on of the power semiconductor device and a magnitude of an off-gate resistor at a time of turn-off of the power semiconductor device, in accordance with an output signal of the comparator.

17. A power conversion apparatus comprising:

the power semiconductor module of claim 15 ;

a differential amplifier circuit to differentially amplify a voltage across the snubber resistor;

a comparator to compare the differentially-amplified voltage with a reference voltage; and

a switching frequency adjustor to change a number of times of switching operations per unit time of the power semiconductor device, in accordance with an output signal of the comparator.

18. The power semiconductor module according to claim 15 ,

wherein the snubber capacitor of the snubber circuit is directly connected to the positive electrode line, and/or

wherein the snubber resistor of the snubber circuit is directly connected to the negative electrode line.

19. The power semiconductor module according to claim 15 ,

wherein the at least one upper arm includes a plurality of upper arms each between the positive electrode line and the output node and including the power semiconductor device and the freewheeling diode connected in antiparallel,

wherein the at least one lower arm includes a plurality of lower arms each between the negative electrode line and the output node and including the power semiconductor device and the freewheeling diode connected in antiparallel, and

wherein the snubber resistor is the only snubber resistor of the power semiconductor module.