Organic light-emitting diode display substrate, manufacturing method thereof, and display device

1. An Organic Light-Emitting Diode (OLED) display substrate, comprising:

a base substrate;

an active layer arranged on the base substrate;

a gate insulation layer arranged at a side of the active layer away from the base substrate; and

a gate electrode layer arranged at a side of the gate insulation layer away from the base substrate,

wherein an orthogonal projection of the gate electrode layer onto the base substrate at least partially overlaps an orthogonal projection of the active layer onto the base substrate, and the gate electrode layer and the active layer form a first storage capacitor of the OLED display substrate,

wherein the gate electrode layer comprises a transparent conductive pattern and a metal pattern laminated one on another, the transparent conductive pattern comprises a first portion not overlapping the metal pattern, an orthogonal projection of the pixel aperture area of the OLED display substrate onto the base substrate falls within an orthogonal projection of the first portion onto the base substrate.

2. The OLED display substrate according to claim 1 , further comprising:

a buffer layer arranged at a side of the active layer adjacent to the base substrate; and

a light-shielding metal layer arranged between the active layer and the base substrate and within the buffer layer,

wherein an orthogonal projection of the light-shielding metal layer onto the base substrate at least partially overlaps the orthogonal projection of the active layer onto the base substrate, and the light-shielding metal layer and the active layer form a second storage capacitor of the OLED display substrate.

3. The OLED display substrate according to claim 2 , wherein the active layer comprises:

a semiconductor member, an orthogonal projection of the semiconductor member onto the base substrate at least partially overlapping the orthogonal projection of the gate electrode layer onto the base substrate; and

a conductor member arranged at both ends of the semiconductor member.

4. The OLED display substrate according to claim 3 , further comprising:

an interlayer dielectric layer arranged at a side of the buffer layer away from the base substrate and covering the gate insulation layer and the gate electrode layer, a first via-hole being formed in the buffer layer and the interlayer dielectric layer, an orthogonal projection of the first via-hole overlapping at least a part of the light-shielding metal layer, a second via-hole and a third via-hole being formed in the interlayer dielectric layer, an orthogonal projection of the second via-hole covering at least a part of the conductor member, and an orthogonal projection of the third via-hole covering at least a part of the gate electrode layer; and

a source/drain metal layer arranged at a side of the interlayer dielectric layer away from the base substrate, and configured to form a source electrode and a drain electrode of a driving transistor and a conductive connection line, the conductive connection line being connected to the light-shielding metal layer through the first via-hole and connected to the gate electrode layer through the third via-hole, and the source electrode and the drain electrode being connected to the conductive member at both ends of the semiconductor member through the second via-hole.

5. The OLED display substrate according to claim 4 , further comprising:

a passivation layer arranged at a side of the interlayer dielectric layer away from the base substrate and covering the source/drain metal layer;

a color film layer arranged at a side of the passivation layer away from the base substrate;

a planarization layer arranged at a side of the color film layer away from the base substrate and covering the color film layer, a fourth via-hole being formed in the planarization layer and the passivation layer, and an orthogonal projection of the fourth via-hole covering at least a part of the drain electrode;

a first electrode arranged at a side of the planarization layer away from the base substrate and electrically connected to the drain electrode through the fourth via-hole;

a pixel definition layer arranged at a side of the first electrode away from the base substrate and comprising a pixel aperture area, an orthogonal projection of the pixel aperture area being located within the color film layer;

a light-emitting layer arranged within the pixel aperture area; and

a second electrode arranged at a side of the light-emitting layer away from the base substrate.

6. The OLED display substrate according to claim 3 , wherein the orthogonal projection of the light-shielding metal layer onto the base substrate at least partially overlaps orthogonal projections of the conductor member and the semiconductor member onto the base substrate.

7. The OLED display substrate according to claim 3 , wherein the gate electrode layer comprises a transparent conductive pattern and a metal pattern laminated one on another, and an orthogonal projection of the conductor member onto the base substrate at least partially overlaps an orthogonal projection of the transparent conductive pattern onto the base substrate.

8. The OLED display substrate according to claim 2 , wherein the orthogonal projection of the light-shielding metal layer onto the base substrate at least partially overlaps the orthogonal projection of the gate electrode layer onto the base substrate.

9. An OLED display device comprising the OLED display substrate according to claim 1 and a packaging layer for packaging the OLED display substrate.

10. A method for manufacturing an OLED display substrate, comprising:

providing a base substrate; forming an active layer on the base substrate;

forming a gate insulation layer at a side of the active layer away from the base substrate; and

forming a gate electrode layer at a side of the gate insulation layer away from the base substrate,

wherein the gate electrode layer and the active layer form a first storage capacitor of the OLED display substrate,

wherein the forming the gate electrode layer comprises forming a transparent conductive pattern and a metal pattern laminated one on another, wherein the transparent conductive pattern comprises a first portion not overlapping the metal pattern, and an orthogonal projection of a pixel aperture area of the OLED display substrate onto the base substrate falls within an orthogonal projection of the first portion onto the base substrate.

11. The method according to claim 10 , wherein prior to forming the active layer, the method further comprises:

forming a light-shielding metal layer on the base substrate; and

forming a buffer layer on the base substrate,

wherein the buffer layer covers the light-shielding layer, the active layer is arranged at a side of the buffer layer away from the base substrate, and the light-shielding layer and the active layer form a second storage capacitor of the OLED display substrate.

12. The method according to claim 11 , wherein the forming the gate electrode layer comprises forming a transparent conductive pattern and a metal pattern laminated one on another, wherein the transparent conductive pattern comprises a first portion not overlapping the metal pattern, and an orthogonal projection of a pixel aperture area of the OLED display substrate onto the base substrate falls within an orthogonal projection of the first portion onto the base substrate.