Dielectric waveguide channel for interconnecting dies in a semiconductor package usable in a computing device and method of manufacture
Embodiments may relate to a semiconductor package that includes a package substrate coupled with a die. The package may further include a waveguide coupled with the first package substrate. The waveguide may include two or more layers of a dielectric material with a waveguide channel positioned between two layers of the two or more layers of the dielectric material. The waveguide channel may convey an electromagnetic signal with a frequency greater than 30 gigahertz (GHz). Other embodiments may be described or claimed.
1. A semiconductor package to be used in an electronic device, wherein the semiconductor package includes:
a first package substrate coupled with a die, wherein the first package substrate includes one or more layers of a dielectric material and one or more alignment mechanisms to align a waveguide with a signal launcher of the die, wherein the one or more alignment mechanisms include a solder resist cavity that is to couple with, and align, the waveguide; and
the waveguide coupled with the first package substrate, wherein the waveguide includes:
two or more layers of a dielectric material; and
a waveguide channel positioned between two layers of the two or more layers of the dielectric material, wherein the waveguide channel is to convey an electromagnetic signal with a frequency greater than 300 gigahertz (GHz).
2. The semiconductor package of claim 1 , wherein the waveguide channel is one of a plurality of waveguide channels.
3. The semiconductor package of claim 1 , wherein the die is a first die, and further comprising a second package substrate coupled with a second die, and wherein the waveguide is coupled with the second package substrate.
4. The semiconductor package of claim 3 , wherein the waveguide is to communicatively couple the first die with the second die.
5. The semiconductor package of claim 1 , wherein the waveguide is to receive the electromagnetic signal from the signal launcher of the die.
6. A semiconductor package to be used in an electronic device, wherein the semiconductor package includes:
a first package substrate coupled with a die, wherein the first package substrate includes one or more layers of a dielectric material; and
a waveguide coupled, by an adhesive material, with the first package substrate, wherein the waveguide includes:
two or more layers of a dielectric material; and
a waveguide channel positioned between two layers of the two or more layers of the dielectric material, wherein the waveguide channel is to convey an electromagnetic signal with a frequency greater than 30 gigahertz (GHz).
7. A computing device comprising:
a first package substrate coupled with a first die;
a second package substrate coupled with a second die; and
a waveguide coupled, by an adhesive, with the first package substrate and the second package substrate, wherein the waveguide includes:
a plurality of layers of a dielectric material; and
a waveguide channel positioned between two layers of the plurality of the layers of the dielectric material, wherein the waveguide channel is to convey an electromagnetic signal with a frequency greater than 30 gigahertz (GHz) between the first die and the second die.
8. The computing device of claim 7 , wherein the waveguide channel is a first waveguide channel, and wherein the waveguide further includes a second waveguide channel positioned between the two layers of the dielectric material, wherein the second waveguide channel is to convey the electromagnetic signal with the frequency greater than 30 GHz.
9. The computing device of claim 7 , wherein the plurality of layers of the dielectric material includes a metal cladding layer.
10. The computing device of claim 7 , wherein the dielectric material is a dielectric cladding material.
11. A method of forming a waveguide that is to be coupled with a package substrate of a semiconductor package, wherein the method comprises:
laminating a waveguide dielectric material on a sacrificial layer of a carrier;
developing the waveguide dielectric material into one or more waveguide channels; and
positioning an adhesive material on the waveguide dielectric material.
12. The method of claim 11 , further comprising laminating a cladding dielectric directly onto the sacrificial layer of the carrier; and
laminating the waveguide dielectric directly onto the cladding dielectric.
13. The method of claim 12 , wherein the cladding dielectric is a first cladding dielectric, and further comprising laminating a second cladding dielectric directly onto the waveguide dielectric material; and
laminating the adhesive material directly onto the second cladding dielectric.
14. The method of claim 11 , further comprising plating copper directly onto the waveguide dielectric material subsequent to the developing of the waveguide dielectric material.
15. The method of claim 11 , further comprising:
positioning a carrier film on the adhesive material; and
removing the carrier subsequent to the positioning the carrier film on the adhesive material.
16. The method of claim 11 , wherein the sacrificial layer includes copper.