Scribe structure for memory device
Apparatuses and methods for manufacturing chips are described. An example method includes: forming at least one first dielectric layer above a substrate; forming at least one second dielectric layer above the first dielectric layer; forming a cover layer above the at least one second dielectric layer; forming a groove above the substrate by etching; covering at least an edge surface of the at least one first dielectric layer in the groove with a liner; forming a hole through the cover layer and a portion of the at least one second dielectric layer; depositing a conductive layer in the hole, on the cover layer and the liner; and forming a conductive pillar on the conductive layer in the hole by electroplating.
1. An apparatus, comprising:
a multilayer structure including:
a first circuit region, a second circuit region and a scribe region between the first circuit region and the second circuit region;
a substrate across the first circuit region and the second circuit region;
a plurality of first dielectric layers above the substrate and across the first circuit region and the second circuit region, the plurality of first dielectric layers having a groove, which includes an edge surface having roughness, in the first dielectric layer and in the scribe region; and
at least one second dielectric layer above the plurality of first dielectric layers; and
at least one liner covering the edge surface of the plurality of dielectric layers to provide a surface smoother than the edge surface,
wherein the plurality of first dielectric layers include a first material that has a dielectric constant lower than a dielectric constant of a second material included in the at least one second dielectric layer.
2. The apparatus of claim 1 , wherein the at least one liner includes the second material.
3. The apparatus of claim 2 , wherein the second material includes silicon dioxide (SiO2).
4. The apparatus of claim 1 , further comprising a cover layer on the at least one second dielectric layer, the cover layer comprising a third material,
wherein the at least one liner comprises the third material.
5. The apparatus of claim 4 , wherein the third material comprises at least one of silicon nitride (Si3N4) or silicon carbide (SiC).
6. The apparatus of claim 4 , wherein the at least one liner comprises a surface continuous with the cover layer.
7. The apparatus of claim 1 , wherein the at least one liner is further configured to cover at least a portion of an edge surface of the at least one second dielectric layer.
8. The apparatus of claim 7 , wherein the at least one liner is further configured to cover the edge surface of the at least one second dielectric layer.
9. The apparatus of claim 1 , further comprising:
a wire in the at least one second dielectric layer in the circuit region;
a conductive seed layer on the wire; and
a conductive pillar in a hole in the at least one second dielectric layer, the conductive pillar disposed on the conductive seed layer.
10. The apparatus of claim 9 , wherein the conductive pillar comprises at least one of copper or nickel.
11. A semiconductor chip, comprising:
a first circuit region, a second circuit region, and a scribe region between the first circuit region and the second circuit region;
a substrate across the first circuit region and the second circuit region;
a plurality of first dielectric layers above the substrate and across the first circuit region and the second circuit region, the plurality of first dielectric layers having a groove, which includes an edge surface having roughness, in the first dielectric layer and in the scribe region;
at least one second dielectric layer above the plurality of first dielectric layers; and
at least one liner covering the edge surface of the plurality of first dielectric layers to provide a surface smoother than the edge surface, wherein
each of the plurality of first dielectric layers includes a first material that has a dielectric constant lower than a dielectric constant of a second material included in the at least one second dielectric layer.
12. The semiconductor chip of claim 11 , wherein the at least one liner includes silicon dioxide (SiO2).
13. The semiconductor chip of claim 11 , wherein the at least one liner includes at least one of silicon nitride (Si3N4) or silicon carbide (SiC).
14. The semiconductor chip of claim 11 , wherein the at least one liner further covers at least a portion of an edge surface of the at least one second dielectric layer.