Semiconductor devices including channel pattern and method for manufacturing the same
A semiconductor device includes a gate structure on a substrate, the gate structure including insulating layers and gate electrodes, which are alternately stacked, a channel structure extending through the gate structure, and a source conductive pattern between the substrate and the gate structure. The source conductive pattern includes a lower source conductive pattern and an upper source conductive pattern on the lower source conductive pattern. The channel structure includes an insulating pattern extending through the source conductive pattern, a data storage pattern, and a channel pattern between the insulating pattern and the data storage pattern. A lower surface of the channel pattern is at a level higher than an upper surface of the upper source conductive pattern, but lower than a lower surface of a lowermost one of the gate electrodes in a cross-sectional view of the semiconductor device with the substrate providing a base reference level.
1. A semiconductor device comprising:
a gate structure on a substrate, the gate structure including insulating layers and gate electrodes, which are alternately stacked;
a channel structure extending through the gate structure; and
a source conductive pattern between the substrate and the gate structure,
wherein the source conductive pattern includes a lower source conductive pattern and an upper source conductive pattern on the lower source conductive pattern,
wherein the channel structure includes
an insulating pattern extending through the source conductive pattern,
a data storage pattern, and
a channel pattern between the insulating pattern and the data storage pattern, and
wherein a lower surface of the channel pattern is at a level higher than an upper surface of the upper source conductive pattern, but lower than a lower surface of a lowermost one of the gate electrodes in a cross-sectional view of the semiconductor device with the substrate providing a base reference level.
2. The semiconductor device of claim 1 , wherein the lower surface of the channel pattern is at a higher level than a lower surface of the data storage pattern in the cross-sectional view of the semiconductor device with the substrate providing the base reference level.
3. The semiconductor device of claim 2 , wherein the lower surface of the data storage pattern is at a lower level than the upper surface of the upper source conductive pattern in the cross-sectional view of the semiconductor device with the substrate providing the base reference level.
4. The semiconductor device of claim 2 , wherein the lower surface of the data storage pattern is at a higher level than the upper surface of the upper source conductive pattern in the cross-sectional view of the semiconductor device with the substrate providing the base reference level.
5. The semiconductor device of claim 1 , wherein the lower surface of the channel pattern is at substantially a same level as the lower surface of the data storage pattern in the cross-sectional view of the semiconductor device.
6. The semiconductor device of claim 1 , wherein:
a portion of a lower surface of the data storage pattern is at a higher level than the upper surface of the upper source conductive pattern in the cross-sectional view of the semiconductor device with the substrate providing the base reference level; and
another portion of the lower surface of the data storage pattern is at a lower level than the upper surface of the upper source conductive pattern in the cross-sectional view of the semiconductor device with the substrate providing the base reference level.
7. The semiconductor device of claim 1 , wherein an upmost portion of a lower surface of the data storage pattern is at a lower level than the lower surface of the channel pattern in the cross-sectional view of the semiconductor device with the substrate providing the base reference level.
8. The semiconductor device of claim 1 , wherein an uppermost portion of a lower surface of the data storage pattern is at a level higher than the lower surface of the channel pattern, but lower than the lower surface of the lowermost one of the gate electrodes in the cross-sectional view of the semiconductor device with the substrate providing the base reference level.
9. The semiconductor device of claim 1 , wherein:
the data storage pattern includes a blocking layer, a charge storage layer and a tunnel insulating layer, which are sequentially stacked on an outer side surface of the channel pattern; and
lower surfaces of the blocking layer, the charge storage layer and the tunnel insulating layer are at different levels, respectively in the cross-sectional view of the semiconductor device.
10. The semiconductor device of claim 9 , wherein a portion of the lower source conductive pattern is between the insulating pattern and the blocking layer while physically contacting the lower surface of the channel pattern.
11. The semiconductor device according to claim 1 , wherein the lower surface of the channel pattern includes C or N.
12. A semiconductor device comprising:
a gate structure on a substrate, the gate structure including insulating layers and gate electrodes, which are alternately stacked;
a channel structure extending through the gate structure; and
a source conductive pattern between the substrate and the gate structure,
wherein the source conductive pattern includes a lower source conductive pattern and an upper source conductive pattern on the lower source conductive pattern,
wherein the channel structure includes
an insulating pattern extending through the source conductive pattern,
a data storage pattern, and
a channel pattern between the insulating pattern and the data storage pattern,
wherein a portion of the lower source conductive pattern is between the insulating pattern and the data storage pattern while physically contacting a lower surface of the channel pattern, and
wherein the lower surface of the channel pattern is at a higher level than a lower surface of the data storage pattern in a cross-sectional view of the semiconductor device with the substrate providing a base reference level.
13. The semiconductor device of claim 12 , wherein the lower surface of the channel pattern is nearer to a lower surface of a lowermost one of the gate electrodes than to an upper surface of the upper source conductive pattern.
14. The semiconductor device of claim 12 , wherein the lower surface of the data storage pattern is at a lower level than an upper surface of the upper source conductive pattern in the cross-sectional view of the semiconductor device with the substrate providing the base reference level.
15. The semiconductor device of claim 12 , wherein the lower surface of the data storage pattern is at a level substantially equal to or higher than an upper surface of the upper source conductive pattern in the cross-sectional view of the semiconductor device with the substrate providing the base reference level.
16. A semiconductor device comprising:
a gate structure on a substrate, the gate structure including insulating layers and gate electrodes, which are alternately stacked;
a lower source conductive pattern between the substrate and the gate structure;
an upper source conductive pattern between the lower source conductive pattern and the gate structure;
a channel structure extending through the gate structure;
a common source structure extending through the channel structure;
a contact on the channel structure; and
a bit line on the contact,
wherein the channel structure includes
an insulating pattern extending through the upper source conductive pattern and the lower source conductive pattern,
a data storage pattern, and
a channel pattern between the insulating pattern and the data storage pattern,
wherein the data storage pattern includes a tunnel insulating layer, a charge storage layer and a blocking layer, which are sequentially stacked on the channel pattern,
wherein the lower source conductive pattern includes
a horizontal extension on an upper surface of the substrate,
a vertical extension extending between the insulating pattern and the upper source conductive pattern, and
a protrusion protruding from an upper surface of the vertical extension, and wherein the protrusion includes a first protrusion between the insulating pattern and the tunnel insulating layer while physically contacting a lower surface of the channel pattern.
17. The semiconductor device of claim 16 , wherein the upper surface of the vertical extension is at a level higher than an upper surface of the upper source conductive pattern, but lower than a lower surface of a lowermost one of the gate electrodes in a cross-sectional view of the semiconductor device with the substrate providing a base reference level.
18. The semiconductor device of claim 16 , wherein:
an upper surface of the first protrusion is at a level higher than an upper surface of the upper source conductive pattern, but lower than a lower surface of a lowermost one of the gate electrodes in a cross-sectional view of the semiconductor device with the substrate providing a base reference level; and
the upper surface of the vertical extension is at a lower level than the upper source conductive pattern in the cross-sectional view of the semiconductor device with the substrate providing the base reference level.
19. The semiconductor device of claim 16 , wherein the protrusion further includes a second protrusion extending between the tunnel insulating layer and a lowermost one of the insulating layers.
20. The semiconductor device of claim 19 , wherein the second protrusion is between the charge storage layer and the lowermost one of the insulating layers while physically contacting a lower surface of the blocking layer.