Material for forming organic film, method for forming organic film, patterning process, and compound

1. A material for forming an organic film, comprising:

a compound shown by the following general formula (1); and

X R 1 ) n1   (1)

wherein X represents an organic group having a valency of n1 and 2 to 50 carbon atoms; n1 represents an integer of 1 to 10; and R 1 represents at least one or more of the following general formulae (2) to (4),

wherein an asterisk represents a bonding site to the organic group X; n2 represents 0 or 1; n3 and n4 represent integers satisfying relations of 0≤n3≤2, 0≤n4≤2, and 1≤n3+n4≤2; R 2 represents any of a hydrogen atom, an allyl group, and a propargyl group; and R 3 represents any of a hydrogen atom, a methyl group, and a phenyl group,

wherein an asterisk represents a bonding site to the organic group X; n5 represents 0 or 1; n6 and n7 represent integers satisfying relations of 0≤n6≤2, 0≤n7≤2, and 1≤n6+n7≤2; R 4 represents any of a hydrogen atom, an allyl group, and a propargyl group; and R 5 represents any of a hydrogen atom, a methyl group, and a phenyl group, and

wherein an asterisk represents a bonding site to the organic group X; and R 6 represents a monovalent organic group having an unsaturated bond and 1 to 10 carbon atoms.

2. The material for forming an organic film according to claim 1 , wherein the organic group X in the general formula (1) is shown by any of the following general formulae (5), (7), (8), (9), (10), (11), (12), (13), (14), and (15),

wherein n8 and n9 each independently represent 0 or 1; W represents a single bond or any of structures shown by (6) below; R 1 represents the R 1 group; and m1 and m2 each independently represent an integer of 0 to 4, and m1+m2 is 1 or more and 8 or less,

wherein n10 represents an integer of 0 to 3; and Ra, Rb, Rc, Rd, Re, and Rf each independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms optionally substituted with fluorine, or a phenyl group, and Ra and Rb are optionally bonded to each other to form a cyclic compound,

wherein R 1 represents the R 1 group; and Rg represents a hydrogen atom, a methyl group, or a phenyl group,

wherein R 1 represents the R 1 group; Rh, Ri, Rj, Rk, Rl, Rm, and Rn each represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkynyl group having 2 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a benzyl group optionally having a substituent on an aromatic ring thereof, or a phenyl group; and each Y represents the R 1 group, a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkynyl group having 2 to 10 carbon atoms, or an alkenyl group having 2 to 10 carbon atoms, and at least two of four Y's in the general formula (12) are the R 1 groups, and

wherein R 1 represents the R 1 group; Ro represents a linear, branched, or cyclic, saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms; and Rp represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms.

3. The material for forming an organic film according to claim 1 , wherein the R 1 group in the general formula (1) comprises:

any one or more shown by the general formulae (2) to (4); and

any one or more shown by the following general formulae (16) and (17),

wherein Rq represents a linear, branched, or cyclic, saturated or unsaturated hydrocarbon group having 1 to 30 carbon atoms; and a methylene group constituting the Rq group is optionally substituted with an oxygen atom or a carbonyl group, and

wherein Rs represents a hydrogen atom or a linear or branched hydrocarbon group having 1 to 10 carbon atoms; Rt represents a linear or branched hydrocarbon group having 1 to 10 carbon atoms, a halogen atom, a nitro group, an amino group, a nitrile group, an alkoxycarbonyl group having 1 to 10 carbon atoms, or an alkanoyloxy group having 1 to 10 carbon atoms; n11 represents any of 0 to 2; and n12 and n13 each represent the number of substituents on an aromatic ring, n12 and n13 each represent an integer of 0 to 7, and n12+n13 is 0 or more and 7 or less.

4. The material for forming an organic film according to claim 1 , further comprising one or more of an acid generator, a surfactant, a crosslinking agent, and a plasticizer.

5. The material for forming an organic film according to claim 1 , wherein the organic solvent is a mixture of one or more organic solvents each having a boiling point of lower than 180° C. and one or more organic solvents each having a boiling point of 180° C. or higher.

6. A method for forming an organic film that serves as an organic flat film employed in a semiconductor device manufacturing process, the method comprising:

spin-coating a substrate to be processed with the material for forming an organic film according to claim 1 ; and

heating the substrate at a temperature of 100° C. or higher and 600° C. or lower for 10 seconds to 600 seconds to form a cured film.

7. A method for forming an organic film that serves as an organic flat film employed in a semiconductor device manufacturing process, the method comprising:

spin-coating a substrate to be processed with the material for forming an organic film according to claim 1 ; and

heating the substrate under an atmosphere with an oxygen concentration of 0.1% or more and 21% or less to form a cured film.

8. The method for forming an organic film according to claim 6 , wherein the substrate to be processed has a structure or step with a height of 30 nm or more.

9. A patterning process comprising:

forming a resist underlayer film by using the material for forming an organic film according to claim 1 on a body to be processed;

forming a resist middle layer film by using a silicon-containing resist middle layer film material on the resist underlayer film;

forming a resist upper layer film by using a resist upper layer film material including a photoresist composition on the resist middle layer film;

forming a circuit pattern in the resist upper layer film;

etching the resist middle layer film while using the resist upper layer film having the formed pattern as a mask to transfer the pattern to the resist middle layer film;

etching the resist underlayer film while using the resist middle layer film having the transferred pattern as a mask to transfer the pattern to the resist underlayer film; and

further etching the body to be processed while using the resist underlayer film having the transferred pattern as a mask to form the pattern in the body to be processed.

10. A patterning process comprising:

forming a resist underlayer film by using the material for forming an organic film according to claim 1 on a body to be processed;

forming a resist middle layer film by using a resist middle layer film material containing silicon atoms on the resist underlayer film;

forming an organic antireflective coating on the resist middle layer film;

forming a resist upper layer film on the organic antireflective coating by using a resist upper layer film material including a photoresist composition, so that a four-layered film structure is constructed;

forming a circuit pattern in the resist upper layer film;

etching the organic antireflective coating and the resist middle layer film while using the resist upper layer film having the formed pattern as a mask to transfer the pattern to the organic antireflective coating and the resist middle layer film;

etching the resist underlayer film while using the resist middle layer film having the transferred pattern as a mask to transfer the pattern to the resist underlayer film; and

further etching the body to be processed while using the resist underlayer film having the transferred pattern as a mask to form the pattern in the body to be processed.

11. A patterning process comprising:

forming a resist underlayer film by using the material for forming an organic film according to claim 1 on a body to be processed;

forming an inorganic hard mask middle layer film selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the resist underlayer film;

forming a resist upper layer film by using a resist upper layer film material including a photoresist composition on the inorganic hard mask middle layer film;

forming a circuit pattern in the resist upper layer film;

etching the inorganic hard mask middle layer film while using the resist upper layer film having the formed pattern as a mask to transfer the pattern to the inorganic hard mask middle layer film;

etching the resist underlayer film while using the inorganic hard mask middle layer film having the formed pattern as a mask to transfer the pattern to the resist underlayer film; and

further etching the body to be processed while using the resist underlayer film having the formed pattern as a mask to form the pattern in the body to be processed.

12. A patterning process comprising:

forming a resist underlayer film by using the material for forming an organic film according to claim 1 on a body to be processed;

forming an inorganic hard mask middle layer film selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the resist underlayer film;

forming an organic antireflective coating on the inorganic hard mask middle layer film;

forming a resist upper layer film on the organic antireflective coating by using a resist upper layer film material including a photoresist composition, so that a four-layered film structure is constructed;

forming a circuit pattern in the resist upper layer film;

etching the organic antireflective coating and the inorganic hard mask middle layer film while using the resist upper layer film having the formed pattern as a mask to transfer the pattern to the organic antireflective coating and the inorganic hard mask middle layer film;

etching the resist underlayer film while using the inorganic hard mask middle layer film having the formed pattern as a mask to transfer the pattern to the resist underlayer film; and

further etching the body to be processed while using the resist underlayer film having the formed pattern as a mask to form the pattern in the body to be processed.

13. The patterning process according to claim 11 , wherein the inorganic hard mask middle layer film is formed by a CVD method or an ALD method.

14. The patterning process according to claim 9 , wherein the pattern is formed in the resist upper layer film by a photolithography using light with a wavelength of 10 nm or more and 300 nm or less, direct lithography with electron beam, nanoimprinting, or a combination thereof.

15. The patterning process according to claim 9 , wherein the pattern formation in the resist upper layer film involves alkali development or organic solvent development.

16. The patterning process according to claim 9 , wherein the body to be processed is a semiconductor device substrate, a metal film, a metal carbide film, a metal oxide film, a metal nitride film, a metal oxycarbide film, or a metal oxynitride film.

17. The patterning process according to claim 9 , wherein the body to be processed comprises silicon, titanium, tungsten, hafnium, zirconium, chromium, germanium, copper, silver, gold, aluminum, indium, gallium, arsenic, palladium, iron, tantalum, iridium, cobalt, manganese, molybdenum, or an alloy thereof.

18. A compound shown by the following general formula (1),

X R 1 ) n1   (1)

wherein X represents an organic group having a valency of n1 and 2 to 50 carbon atoms; n1 represents an integer of 1 to 10; and R 1 represents at least one or more of the following general formulae (2) to (4),

wherein an asterisk represents a bonding site to the organic group X; n2 represents 0 or 1; n3 and n4 represent integers satisfying relations of 0≤n3≤2, 0≤n4≤2, and 1≤n3+n4≤2; R 2 represents any of a hydrogen atom, an allyl group, and a propargyl group; and R 3 represents any of a hydrogen atom, a methyl group, and a phenyl group,

wherein an asterisk represents a bonding site to the organic group X; n5 represents 0 or 1; n6 and n7 represent integers satisfying relations of 0≤n6≤2, 0≤n7≤2, and 1≤n6+n7≤2; R 4 represents any of a hydrogen atom, an allyl group, and a propargyl group; and R 5 represents any of a hydrogen atom, a methyl group, and a phenyl group, and

wherein an asterisk represents a bonding site to the organic group X; and R 6 represents a monovalent organic group having an unsaturated bond and 1 to 10 carbon atoms.

19. The compound according to claim 18 , wherein the organic group X in the general formula (1) is shown by any of the following general formulae (5), (7), (8), (9), (10), (11), (12), (13), (14), and (15),

wherein n8 and n9 each independently represent 0 or 1; W represents a single bond or any of structures shown by (6) below; R 1 represents the R 1 group; and m1 and m2 each independently represent an integer of 0 to 4, and m1+m2 is 1 or more and 8 or less,

wherein n10 represents an integer of 0 to 3; and Ra, Rb, Rc, Rd, Re, and Rf each independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms optionally substituted with fluorine, or a phenyl group, and Ra and Rb are optionally bonded to each other to form a cyclic compound,

wherein R 1 represents the R 1 group; and Rg represents a hydrogen atom, a methyl group, or a phenyl group,

wherein R 1 represents the R 1 group; Rh, Ri, Rj, Rk, Rl, Rm, and Rn each represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkynyl group having 2 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a benzyl group optionally having a substituent on an aromatic ring thereof, or a phenyl group; and each Y represents the R 1 group, a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkynyl group having 2 to 10 carbon atoms, or an alkenyl group having 2 to 10 carbon atoms, and at least two of four Y's in the general formula (12) are the R 1 groups, and

wherein R 1 represents the R 1 group; Ro represents a linear, branched, or cyclic, saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms; and Rp represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms.

20. The compound according to claim 18 , wherein the R 1 group in the general formula (1) comprises:

any one or more shown by the general formulae (2) to (4); and

any one or more shown by the following general formulae (16) and (17),

wherein Rq represents a linear, branched, or cyclic, saturated or unsaturated hydrocarbon group having 1 to 30 carbon atoms; and a methylene group constituting the Rq group is optionally substituted with an oxygen atom or a carbonyl group, and

wherein Rs represents a hydrogen atom or a linear or branched hydrocarbon group having 1 to 10 carbon atoms; Rt represents a linear or branched hydrocarbon group having 1 to 10 carbon atoms, a halogen atom, a nitro group, an amino group, a nitrile group, an alkoxycarbonyl group having 1 to 10 carbon atoms, or an alkanoyloxy group having 1 to 10 carbon atoms; n11 represents any of 0 to 2; and n12 and n13 each represent the number of substituents on an aromatic ring, n12 and n13 each represent an integer of 0 to 7, and n12+n13 is 0 or more and 7 or less.