Multi-chamber apparatus
A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.
1. A method for manufacturing a semiconductor, the method comprising:
moving a wafer in a high etch rate chamber of a multi-chamber apparatus;
etching silicon nitride of the wafer with a first phosphoric acid solution in the high etch rate chamber;
moving the wafer from the high etch rate chamber to a rinse chamber of the multi-chamber apparatus;
cleaning the wafer with an ammonia mixed solution in the rinse chamber;
moving the wafer from the rinse chamber to a supercritical drying chamber of the multi-chamber apparatus; and
drying the wafer with a supercritical fluid in the supercritical drying chamber,
wherein:
a process time of the high etch rate chamber is a first time,
a process time of the rinse chamber is a second time,
a process time of the supercritical drying chamber is a third time,
a ratio of the first time, the second time, and the third time is 5:1:3, and
a temperature of the ammonia mixed solution is 50° C. to 150° C.
2. The method as claimed in claim 1 , further comprising cleaning the wafer with deionized water in the high etch rate chamber after the wafer is etched with the first phosphoric acid solution.
3. The method as claimed in claim 1 , further comprising cleaning the wafer with isopropyl alcohol in the rinse chamber after the wafer is cleaned with the ammonia mixed solution.
4. The method as claimed in claim 1 , further comprising removing a particle of the wafer with a second phosphoric acid solution in the rinse chamber before the wafer is cleaned with the ammonia mixed solution.
5. The method as claimed in claim 1 , wherein:
the multi-chamber apparatus comprises n high etch rate chambers, m rinse chambers, and i supercritical drying chambers,
n, m, and i are natural numbers,
n is greater than i, and
i is greater than m.
6. The method as claimed in claim 5 , wherein:
n is 3, m is 1, and i is 2.
7. The method as claimed in claim 5 , wherein:
n is 9, m is 3, and i is 4.
8. The method as claimed in claim 1 , wherein the ammonia mixed solution contains NH 4 OH, H 2 O 2 , and H 2 O.