Semiconductor testkey pattern and test method thereof
The invention provides a semiconductor testkey pattern, the semiconductor testkey pattern includes a high density device region and a plurality of resistor pairs surrounding the high density device region, wherein each resistor pair includes two mutually symmetrical resistor patterns.
1. A semiconductor testkey pattern, comprising:
a high density device region; and
a plurality of resistor pairs surrounding the high density device region, wherein each resistor pair comprises two mutually symmetrical resistor patterns, wherein each resistor pattern comprises a plurality of strip-shaped resistor patterns arranged in parallel with each other, and a plurality of wires connect the strip-shaped resistor patterns in series with each other, and wherein the plurality of resistor pairs comprise a plurality of resistor pairs arranged along a first direction, and the remaining part of the testkey pattern comprises a plurality of resistor pairs arranged along a second direction.
2. The semiconductor testkey pattern according to claim 1 , wherein the first direction and the second direction are perpendicular to each other.
3. The semiconductor testkey pattern according to claim 1 , wherein the plurality of resistor pairs arranged along the first direction comprise a plurality of strip-shaped resistor patterns arranged along the first direction, and the plurality of resistor pairs arranged along the second direction comprise a plurality of strip-shaped resistor patterns arranged along the second direction.
4. The semiconductor testkey pattern according to claim 1 , wherein a shortest distance between any one of the plurality of resistor pairs and the high density device region is between 1.5 μm and 50 μm.
5. A method for testing semiconductor testkey patterns, comprising:
providing a semiconductor testkey pattern, the semiconductor testkey pattern comprising:
a high density device region;
a plurality of resistor pairs surrounding the high density device region, wherein each resistor pair comprises two mutually symmetrical resistor patterns, wherein each resistor pattern comprises a plurality of strip-shaped resistor patterns arranged in parallel with each other, and a plurality of wires connect the strip-shaped resistor patterns in series with each other, and wherein the plurality of resistor pairs comprise a plurality of resistor pairs arranged along a first direction, and the remaining part of the testkey pattern comprises a plurality of resistor pairs arranged along a second direction; and
performing a laser heating step on the semiconductor testkey pattern; and
testing the resistance change of each resistor pair of the semiconductor testkey pattern.
6. The test method according to claim 5 , wherein the first direction and the second direction are perpendicular to each other.
7. The test method according to claim 5 , wherein the plurality of resistor pairs arranged along the first direction comprise a plurality of strip-shaped resistor patterns arranged along the first direction, and the plurality of resistor pairs arranged along the second direction comprise a plurality of strip-shaped resistor patterns arranged along the second direction.
8. The test method according to claim 5 , wherein the laser heating step on the semiconductor testkey pattern comprises:
providing a plurality of substrates, wherein each substrate comprises a semiconductor testkey pattern;
performing a laser heating step on the semiconductor testkey pattern of one of the substrates from one angle;
performing a laser heating step on the semiconductor testkey pattern of another substrate from another angle; and
finding out a most suitable angle.
9. The test method according to claim 8 , wherein the laser heating step comprises laser heating the semiconductor testkey pattern from the most suitable angle in a scanning manner.
10. The test method according to claim 5 , wherein testing the resistance change of the semiconductor testkey pattern comprises:
measuring the resistance difference value between the two resistor patterns of each resistor pair after the laser heating step is performed.
11. The test method according to claim 5 , wherein a shortest distance between any one of the plurality of resistor pairs and the high density device region is between 1.5 μm and 50 μm.