Semiconductor device and method of manufacture
A semiconductor device and method of manufacture are provided. In embodiments a dielectric fin is formed in order to help isolate adjacent semiconductor fins. The dielectric fin is formed using a deposition process in which deposition times and temperatures are utilized to increase the resistance of the dielectric fin to subsequent etching processes.
1. A method of manufacturing a semiconductor device, the method comprising:
forming an opening within a dielectric material, the dielectric material being located between semiconductor fins; and
depositing a first dielectric material within the opening, the depositing the first dielectric material comprising:
pulsing a first precursor material for a first time of between about 20 seconds and about 120 seconds;
pulsing a second precursor material for a second time of between about 70 seconds and about 200 seconds, the second precursor material being different from the first precursor material;
pulsing a third precursor material for a third time of between about 20 seconds and about 120 seconds, the third precursor material being different from both the first precursor material and the second precursor material;
prior to the depositing the first dielectric material, depositing a blocking layer within the opening, the depositing the blocking layer comprising:
pulsing the first precursor material for a fourth time less than the first time;
pulsing the second precursor material for a fifth time less than the second time; and
pulsing the third precursor material for a sixth time less than the third time.
2. The method of claim 1 , wherein the fourth time is between about 3 seconds and about 20 seconds, wherein the fifth time is between about 3 seconds and about 70 seconds, and wherein the sixth time is between about 3 seconds and about 20 seconds.
3. The method of claim 2 , wherein the first precursor material comprises dichlorosilane, wherein the second precursor material comprises propane, and wherein the third precursor material comprises ammonia.
4. The method of claim 3 , wherein the first dielectric material comprises silicon carbon nitride.
5. The method of claim 4 , wherein the silicon carbon nitride has a silicon concentration of between about 45.7% and 48.73%, a carbon concentration of between about 19.1% and about 22.13%, and a nitrogen concentration of between about 26.1% and about 29.13%.
6. The method of claim 5 , wherein the blocking layer has a silicon concentration between about 39.3% and about 42.13%, a carbon concentration of between about 15.1% and 17.93%, and a nitrogen concentration of between about 37.1% and 39.93%.
7. The method of claim 1 , wherein the dielectric material comprises silicon oxide.
8. A method of manufacturing a semiconductor device, the method comprising:
depositing a blocking layer to line an opening in a dielectric material between semiconductor fins, the depositing the blocking layer comprising:
introducing a first precursor material for a first time;
after the introducing the first precursor material, introducing a second precursor material for a second time, the second precursor material being different from the first precursor material; and
after the introducing the second precursor material, introducing a third precursor material for a third time, the third precursor material being different from both the first precursor material and the second precursor material;
filling a remainder of the opening by depositing a bulk material, the depositing the bulk material comprising:
introducing the first precursor material for a fourth time larger than the first time;
after the introducing the first precursor material to deposit the bulk material, introducing the second precursor material for a fifth time larger than the second time; and
after the introducing the second precursor material to deposit the bulk material, introducing the third precursor material for a sixth time larger than the third time.
9. The method of claim 8 , further comprising:
planarizing the blocking layer with the dielectric material and the semiconductor fins; and
recessing the dielectric material to expose sidewalls of the semiconductor fins and sidewalls of the blocking layer.
10. The method of claim 8 , wherein the fourth time is between about 20 seconds and about 120 seconds, wherein the fifth time is between about 70 seconds and about 200 seconds, and wherein the sixth time is between about 20 seconds and about 120 seconds.
11. The method of claim 10 , wherein the first time is between about 3 seconds and about 20 seconds, wherein the second time is between about 3 seconds and about 70 seconds, and wherein the third time is between about 3 seconds and about 20 seconds.
12. The method of claim 8 , further comprising, prior to the filling the remainder of the opening, depositing an intermediate material, wherein the depositing the intermediate material comprises:
introducing the first precursor material for the fourth time;
after the introducing the first precursor material to deposit the intermediate material, introducing the second precursor material for the fifth time; and
after the introducing the second precursor material to deposit the intermediate material, introducing the third precursor material for the sixth time, wherein the depositing the intermediate material is performed at a same temperature as the depositing the blocking layer.
13. The method of claim 8 , wherein the bulk material has a silicon concentration of between about 45.7% and 48.73%, a carbon concentration of between about 19.1% and about 22.13%, and a nitrogen concentration of between about 26.1% and about 29.13%.
14. The method of claim 8 , wherein the blocking layer has a silicon concentration between about 39.3% and about 42.13%, a carbon concentration of between about 15.1% and 17.93%, and a nitrogen concentration of between about 37.1% and 39.93%.
15. A method of manufacturing a semiconductor device, the method comprising:
forming a semiconductor fin extending through a dielectric material; and
forming a hybrid dielectric fin extending from within the dielectric material, the forming the hybrid dielectric fin comprising:
forming a blocking layer, the blocking layer comprising a first material with a first composition; and
forming a bulk material, the bulk material comprising the first material with a second composition different from the first composition, the second composition having a larger carbon concentration than the first composition.
16. The method of claim 15 , wherein the first material is silicon carbon nitride.
17. The method of claim 15 , wherein the second composition has a carbon concentration of about 19.1%.
18. The method of claim 15 , wherein the second composition has a silicon concentration that is greater than a silicon concentration of the first composition.
19. The method of claim 15 , wherein the second composition has a nitrogen concentration that is less than a nitrogen concentration of the first composition.
20. The method of claim 15 , wherein the second composition comprises has a silicon concentration of between about 45.7% and 48.73%, a carbon concentration of between about 19.1% and about 22.13%, and a nitrogen concentration of between about 26.1% and about 29.13%.