IP Library › Granted Patent US 11,723,253
Granted Patent B2
US 11,723,253 · App. 17/225,227 · Granted Aug 8, 2023

Light-emitting device including flexible printed circuit

Inventors: Shunpei Yamazaki (Setagaya, JP); Yoshiharu Hirakata (Ebina, JP); Tomoya Aoyama (Atsugi, JP); Akihiro Chida (Isehara, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H10K59/40G06F3/0412H04B1/3888H04M1/0266H10K50/11H10K50/84H10K50/841H10K50/844H10K59/131H10K71/80H10K77/111G06F2203/04103G09G2380/02H01L27/14678H10K59/1201H10K59/126H10K59/60H10K2102/311Y02E10/549
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,723,253
App. No.
17/225,227
Granted
Aug 8, 2023
Kind
B2
Abstract

A light-emitting device or a display device that is less likely to be broken is provided. Provided is a light-emitting device including an element layer and a substrate over the element layer. At least a part of the substrate is bent to the element layer side. The substrate has a light-transmitting property and a refractive index that is higher than that of the air. The element layer includes a light-emitting element that emits light toward the substrate side. Alternatively, provided is a light-emitting device including an element layer and a substrate covering a top surface and at least one side surface of the element layer. The substrate has a light-transmitting property and a refractive index that is higher than that of the air. The element layer includes a light-emitting element that emits light toward the substrate side.

Claims (48)

1. A light-emitting device comprising:

a transistor over a first substrate;

a light-emitting element over the transistor;

a first conductive layer over the light-emitting element;

an insulating layer over the first conductive layer;

a second conductive layer over the insulating layer; and

a second substrate over the second conductive layer,

wherein a third conductive layer is of a same material as the second conductive layer,

wherein the third conductive layer is electrically connected to a flexible printed circuit,

wherein the third conductive layer is configured as an external connection electrode,

wherein the transistor and the light-emitting element are in a pixel region,

wherein the first conductive layer and the second conductive layer overlap with each other in the pixel region with the insulating layer therebetween,

wherein the third conductive layer is outside the pixel region,

wherein the second substrate comprises a flat region and a first region which is bent to the first substrate side,

wherein the pixel region and the first region overlap with each other,

wherein the third conductive layer and the flat region overlap with each other, and

wherein the light-emitting device is configured to sense proximity or contact of an object on a top surface of the second substrate using the first conductive layer and the second conductive layer.

2. The light-emitting device according to claim 1 , further comprising a resin layer between the light-emitting element and the first conductive layer,

wherein the resin layer is configured to seal the light-emitting element.

3. The light-emitting device according to claim 1 , wherein the light-emitting device is configured to drive the first conductive layer and the second conductive layer through the flexible printed circuit.

4. The light-emitting device according to claim 1 , wherein a refractive index of the second substrate is higher than that of a refractive index of the air.

5. The light-emitting device according to claim 1 , wherein the transistor comprises an oxide semiconductor layer comprising indium, gallium, and zinc.

6. A light-emitting device comprising:

a transistor over a first substrate;

a light-emitting element over the transistor;

a first conductive layer over the light-emitting element;

an insulating layer over the first conductive layer;

a second conductive layer over the insulating layer; and

a second substrate over the second conductive layer,

wherein a third conductive layer is of a same material as the second conductive layer,

wherein the third conductive layer is electrically connected to a flexible printed circuit,

wherein the third conductive layer is configured as an external connection electrode,

wherein the transistor and the light-emitting element are in a pixel region,

wherein the first conductive layer and the second conductive layer overlap with each other in the pixel region with the insulating layer therebetween,

wherein the third conductive layer is outside the pixel region,

wherein the second substrate comprises a flat region,

wherein the second substrate comprises a first region which is bent to the first substrate side,

wherein the second substrate comprises a second region which is bent to the first substrate side,

wherein the flat region is between the first region and the second region,

wherein the pixel region and the first region overlap with each other,

wherein the pixel region and the second region overlap with each other,

wherein the third conductive layer and the flat region overlap with each other, and

wherein the light-emitting device is configured to sense proximity or contact of an object on a top surface of the second substrate using the first conductive layer and the second conductive layer.

7. The light-emitting device according to claim 6 , further comprising a resin layer between the light-emitting element and the first conductive layer,

wherein the resin layer is configured to seal the light-emitting element.

8. The light-emitting device according to claim 6 , wherein the light-emitting device is configured to drive the first conductive layer and the second conductive layer through the flexible printed circuit.

9. The light-emitting device according to claim 6 , wherein a refractive index of the second substrate is higher than that of a refractive index of the air.

10. The light-emitting device according to claim 6 , wherein the transistor comprises an oxide semiconductor layer comprising indium, gallium, and zinc.

Priority Claims (2)
JP 2013-084528 · Apr 15, 2013 · national
JP 2013-218603 · Oct 21, 2013 · national
Continuity (5)
Continuation 16216232 · Dec 11, 2018
Continuation 15814930 · Nov 16, 2017
Continuation 15164057 · May 25, 2016
Continuation 14247616 · Apr 8, 2014
Related Publication 20210227061A1 · Jul 22, 2021