Substrate processing method and substrate processing apparatus
Provided is a method of processing a substrate including an etching target film and a mask having an opening formed on the etching target film. The method includes a) providing the substrate on a stage in a chamber and b) forming a film having a thickness that differs along a film thickness direction of the mask, on a side wall of the opening.
1. A method of processing a substrate including an etching target film and a mask having an opening formed on the etching target film, comprising:
(a) providing the substrate on a stage in a chamber;
(b) forming a film having a thickness that differs along a film thickness direction of the mask, on a side wall of the opening; and
(c) trimming the film,
wherein when (b) is repeatedly performed n or more times (n is a natural number of 2 or more), a position and a thickness of the film formed in (b) are changed by changing a processing condition in an n-th processing and an (n−1)-th processing, and
a variation in an opening dimension of the opening in the film thickness direction of the mask after (c) is smaller than a variation in an opening dimension of the opening in the film thickness direction of the mask before (c).
2. The method according to claim 1 , wherein (b) and (c) are repeated.
3. The method according to claim 1 , wherein (b) and (c) are repeated until the variation in the opening dimension of the opening becomes equal to or less than a predetermined reference value.
4. The method according to claim 1 , wherein in (b), the film whose film thickness decreases from an opening side of the mask toward a substrate side is formed on the side wall of the opening.
5. The method according to claim 1 , wherein in (b), the film is formed only on an upper portion of the side wall of the opening.
6. The method according to claim 1 , wherein in (b), the film is formed on an upper portion of the side wall of the opening to have a film thickness of about 10% to about 40% of the opening dimension of the opening.
7. The method according to claim 1 , wherein (b) is performed when an aspect ratio of the opening is 10 or more.
8. The method according to claim 1 , wherein the opening includes a bow or a taper.
9. The method according to claim 1 , wherein in (b), a first reactant and a second reactant are supplied into the chamber, and the first reactant and the second reactant are reacted to form the film, and
when (b) is repeatedly performed n′ or more times (n′ is a natural number of 2 or more), the position and the thickness of the film formed in (b) are changed by changing the first reactant and the second reactant used in an n′-th processing and an (n′−1)-th processing.
10. The method according to claim 1 , further comprising:
(d) forming a base film on an upper portion of the side wall of the opening to reduce an opening dimension on the upper portion of the side wall of the opening.
11. The method according to claim 10 , wherein (d) is performed before (b).
12. The method according to claim 10 , wherein (d) is performed when an aspect ratio of the opening is less than 10.
13. The method according to claim 1 , wherein (b) and (c) are performed in a same chamber (in-situ) or in a same system (in-system) while maintaining a reduced pressure atmosphere.
14. The method according to claim 1 , wherein (b) is performed by a chemical vapor deposition.
15. The method according to claim 1 , wherein (b) is performed by an atomic layer deposition in which an absorption of a precursor or a reaction of a reactive gas is selectively caused on the side wall of the opening.
16. The method according to claim 1 , further comprising:
(e) forming a base film on the side wall of the opening before (c).
17. The method according to claim 16 , wherein the film and the base film are respectively formed of materials having a different etching selectivity.
18. The method according to claim 16 , wherein the base film is formed of a same material as the mask, and
the film is formed of a same material as an etching target film under the mask.
19. The method according to claim 1 , further comprising:
(f) forming an inhibitor that inhibits formation of the film before (b).
20. The method according to claim 1 , further comprising:
(g) applying a coating for covering by-products adhering to an inner wall of the chamber after (c).
21. A method of processing a substrate including an etching target film and a mask having an opening formed on the etching target film, comprising:
(a) providing the substrate on a stage in a chamber;
(b) forming a film having a thickness that differs along a film thickness direction of the mask, on a side wall of the opening; and
(c) trimming the film,
wherein in (b), each of a plurality of zones provided on the stage on which the substrate is disposed and configured such that temperatures of the plurality of zones are independently controllable is controlled to a different temperature according to an in-plane position of each of the plurality of zones, thereby changing the thickness of the film according to temperatures of the plurality of zones, and
a variation in an opening dimension of the opening in the film thickness direction of the mask after (c) is smaller than a variation in an opening dimension of the opening in the film thickness direction of the mask before (c).
22. A method of processing a substrate including an etching target film and a mask having an opening formed on the etching target film, comprising:
(a) providing the substrate on a stage in a chamber;
(b) forming a film having a thickness that differs along a film thickness direction of the mask, on a side wall of the opening; and
(c) trimming the film,
wherein (b) is repeatedly performed at least n″ times (n″ is a natural number of 2 or more),
in (b) of an (n″−1)-th processing, each of a plurality of zones provided on the stage on which the substrate is disposed and configured such that temperatures of the plurality of zones are independently controllable is controlled in a first temperature distribution, thereby forming the film having a first film thickness distribution in a depth direction, and
in (b) of an n″-th processing, each of a plurality of zones is controlled in a second temperature distribution, thereby forming the film having a second film thickness distribution in the depth direction, and
wherein a variation in an opening dimension of the opening in the film thickness direction of the mask after (c) is smaller than a variation in an opening dimension of the opening in the film thickness direction of the mask before (c).