Semiconductor device and method for driving semiconductor device
A semiconductor device with a large storage capacity per unit area is provided. A semiconductor device includes a memory cell. The memory cell includes a first conductor; a first insulator over the first conductor; a first oxide over the first insulator and including a first region, a second region, and a third region positioned between the first region and the second region; a second insulator over the first oxide; a second conductor over the second insulator; a third insulator positioned in contact with a side surface of the first region; and a second oxide positioned on the side surface of the first region, with the third insulator therebetween. The first region includes a region overlapping the first conductor. The third region includes a region overlapped by the second conductor. The first region and the second region have a lower resistance than the third region.
1. A semiconductor device comprising:
a substrate;
a first oxide layer over the substrate, the first oxide layer comprising a first region, a second region, and a third region positioned between the first region and the second region;
a second oxide layer comprising In and Zn;
a first conductive layer overlapping with the first oxide layer;
a first insulating layer overlapping and being in contact with the first oxide layer and the first conductive layer and surrounding the second oxide layer;
a third oxide layer over the first conductive layer;
a second conductive layer overlapping with the third oxide layer; and
a second insulating layer overlapping and being in contact with the third oxide layer and the second conductive layer and surrounding the second oxide layer,
wherein each of the first region and the second region has a lower resistance than the third region.
2. The semiconductor device according to claim 1 , wherein the second oxide layer has a shape extending in a direction perpendicular to the substrate.
3. The semiconductor device according to claim 1 , further comprising a fourth oxide layer,
wherein the fourth oxide layer surrounds the second oxide layer.
4. The semiconductor device according to claim 1 , wherein each of the first region, the second region and the third region comprises In, Ga and Zn.
5. The semiconductor device according to claim 1 ,
wherein the semiconductor device comprises a first transistor and a second transistor,
wherein the first transistor comprises the first oxide layer, the first insulating layer and the first conductive layer, and
wherein the second transistor comprises the third oxide layer, the second conductive layer and the second insulating layer.
6. The semiconductor device according to claim 5 ,
wherein the semiconductor device comprises a memory cell array comprising a plurality of memory cells,
wherein one of the plurality of memory cells comprises the first transistor and a third transistor comprising the second oxide layer, and
wherein another one of the plurality of memory cells comprises the second transistor and a fourth transistor comprising the second oxide layer.
7. The semiconductor device according to claim 6 , wherein the second oxide is provided to be shared by the plurality of memory cells.
8. A semiconductor device comprising;
a substrate;
a first oxide layer over the substrate, the first oxide layer comprising a first region, a second region, and a third region positioned between the first region and the second region;
a first conductive layer overlapping with the first oxide layer;
a first insulating layer overlapping and being in contact with the first oxide layer and the first conductive layer; and
a second oxide layer comprising In and Zn,
wherein an opening penetrates the first oxide layer, the first conductive layer and the first insulating layer,
wherein the second oxide layer is positioned in the opening, and
wherein each of the first region and the second region has a lower resistance than the third region.
9. The semiconductor device according to claim 8 , wherein the second oxide layer has a shape extending in a direction perpendicular to the substrate.
10. The semiconductor device according to claim 8 , further comprising a fourth oxide layer,
wherein the fourth oxide layer surrounds the second oxide layer in the opening.
11. The semiconductor device according to claim 8 , wherein each of the first region, the second region and the third region comprises In, Ga and Zn.
12. The semiconductor device according to claim 8 ,
wherein the semiconductor device comprises a first transistor and a second transistor, and
wherein the first transistor comprises the first oxide layer as a channel formation region, and the first conductive layer as a gate.
13. The semiconductor device according to claim 12 ,
wherein the semiconductor device comprises a memory cell array comprising a plurality of memory cells, and
wherein one of the plurality of memory cells comprises the first transistor and a third transistor comprising the second oxide layer in a channel formation region.
14. The semiconductor device according to claim 13 , wherein the second oxide is provided to be shared by the plurality of memory cells.