Solid state disk access method and apparatus, device, and medium

1. A solid state disk access method, comprising:

determining, in response to a read error for data in a current data block, a first read voltage of the current data block according to a current data storage time interval to which a data storage time of the current data block belongs;

performing reread error correction on the data in the current data block based on the first read voltage;

determining, in response to reread error correction of the current data block failing, a second read voltage corresponding to the current data block according to the current data storage time interval and a preset data read rule that is determined based on the data storage time interval and a number of data reads;

performing reread error correction on the data in the current data block based on the second read voltage until the reread error correction of the current data block meets a preset reread error correction condition;

wherein the step of performing reread error correction on the data in the current data block based on the first read voltage comprises:

performing, in response to the first read voltage comprising a plurality of read voltage values, reread error correction on the data in the current data block based on each read voltage value in the first read voltage respectively.

2. The solid state disk access method according to claim 1 , wherein before the step of determining, in response to the read error for data in the current data block, the first read voltage of the current data block according to the current data storage time interval to which the data storage time of the current data block belongs, the method further comprises:

acquiring preset data storage time interval information and a read voltage corresponding to each data storage time interval; and

acquiring a read voltage corresponding to the number of data reads, and storing each of the data storage time intervals, the read voltage corresponding to each of the data storage time intervals and the read voltage corresponding to the number of data reads.

3. The solid state disk access method according to claim 2 , wherein the step of acquiring the preset data storage time interval information and the read voltage corresponding to each of the data storage time intervals comprises:

acquiring the preset data storage time interval information; and

determining the read voltage corresponding to each of the data storage time intervals in the preset data storage time interval information based on a read voltage in a retry table of a solid state disk where the current data block is located.

4. The solid state disk access method according to claim 3 , wherein the step of determining the read voltage corresponding to any data storage time interval in the preset data storage time interval information based on the read voltage in the retry table of the solid state disk where the current data block is located comprises:

reading data having a storage time belonging to the data storage time interval based on each of the read voltage in the retry table respectively, so as to obtain a read accuracy rate corresponding to each of the read voltage in the retry table; and

determining a read voltage corresponding to the data storage time interval according to the read accuracy rate.

5. The solid state disk access method according to claim 3 , further comprising:

reading data having a storage time belonging to each data storage time interval by simulation, so as to determine the read voltage corresponding to the each of the data storage time intervals.

6. The solid state disk access method according to claim 1 , wherein before the step of determining, in response to the read error for data in the current data block, the first read voltage of the current data block according to the current data storage time interval to which the data storage time of the current data block belongs, the method further comprises:

acquiring the preset data read rule, and storing the preset data read rule.

7. The solid state disk access method according to claim 1 , wherein after the step of performing reread error correction on the data in the current data block based on the first read voltage, the method further comprises:

judging whether a read accuracy rate of the current data block is greater than or equal to a preset accuracy rate threshold value;

determining that the reread error correction of the current data block is successful in response to the read accuracy rate of the current data block being greater than or equal to the preset accuracy rate threshold value; and

determining that the reread error correction of the current data block fails in response to the read accuracy rate of the current data block being smaller than the preset accuracy rate threshold value.

8. An electronic device, comprising:

a memory and a processor,

wherein the memory is configured to store a computer instruction; and

the processor is configured to execute the computer instruction so as to implement the steps of:

determining, in response to a read error for data in a current data block, a first read voltage of the current data block according to a current data storage time interval to which a data storage time of the current data block belongs;

performing reread error correction on the data in the current data block based on the first read voltage;

determining, in response to reread error correction of the current data block failing, a second read voltage corresponding to the current data block according to the current data storage time interval and a preset data read rule that is determined based on the data storage time interval and a number of data reads;

performing reread error correction on the data in the current data block based on the second read voltage until the reread error correction of the current data block meets a preset reread error correction condition;

wherein the step of performing reread error correction on the data in the current data block based on the first read voltage comprises:

performing, in response to the first read voltage comprising a plurality of read voltage values, reread error correction on the data in the current data block based on each read voltage value in the first read voltage respectively.

9. The electronic device according to claim 8 , wherein the processor, upon execution of the computer instruction, is further configured to:

acquire preset data storage time interval information and a read voltage corresponding to each data storage time interval; and

acquire a read voltage corresponding to the number of data reads, and store each of the data storage time intervals, the read voltage corresponding to each of the data storage time intervals and the read voltage corresponding to the number of data reads.

10. The electronic device according to claim 9 , wherein the processor, upon execution of the computer instruction, is further configured to:

acquire the preset data storage time interval information; and

determine the read voltage corresponding to each of the data storage time intervals in the preset data storage time interval information based on a read voltage in a retry table of a solid state disk where the current data block is located.

11. The electronic device according to claim 10 , wherein the processor, upon execution of the computer instruction, is further configured to:

read data having a storage time belonging to the data storage time interval based on each of the read voltage in the retry table respectively, so as to obtain a read accuracy rate corresponding to each of the read voltage in the retry table; and

determine a read voltage corresponding to the data storage time interval according to the read accuracy rate.

12. The electronic device according to claim 10 , wherein the processor, upon execution of the computer instruction, is further configured to:

read data having a storage time belonging to each data storage time interval by simulation, so as to determine the read voltage corresponding to the each of the data storage time intervals.

13. The electronic device according to claim 8 , wherein the processor, upon execution of the computer instruction, is further configured to:

acquire the preset data read rule, and store the preset data read rule.

14. The electronic device according to claim 8 , wherein the processor, upon execution of the computer instruction, is further configured to:

judge whether a read accuracy rate of the current data block is greater than or equal to a preset accuracy rate threshold value;

determine that the reread error correction of the current data block is successful in response to the read accuracy rate of the current data block being greater than or equal to the preset accuracy rate threshold value; and

determine that the reread error correction of the current data block fails in response to the read accuracy rate of the current data block being smaller than the preset accuracy rate threshold value.

15. A computer-readable storage medium, configured to store a computer instruction, wherein the computer instruction, upon execution by a processor, implements the steps of:

determining, in response to a read error for data in a current data block, a first read voltage of the current data block according to a current data storage time interval to which a data storage time of the current data block belongs;

performing reread error correction on the data in the current data block based on the first read voltage;

determining, in response to reread error correction of the current data block failing, a second read voltage corresponding to the current data block according to the current data storage time interval and a preset data read rule that is determined based on the data storage time interval and a number of data reads;

performing reread error correction on the data in the current data block based on the second read voltage until the reread error correction of the current data block meets a preset reread error correction condition;

wherein the step of performing reread error correction on the data in the current data block based on the first read voltage comprises:

performing, in response to the first read voltage comprising a plurality of read voltage values, reread error correction on the data in the current data block based on each read voltage value in the first read voltage respectively.

16. The computer-readable storage medium according to claim 15 , wherein the computer instruction, upon execution by the processor, is further configured to cause the processor to:

acquire preset data storage time interval information and a read voltage corresponding to each data storage time interval; and

acquire a read voltage corresponding to the number of data reads, and store each of the data storage time intervals, the read voltage corresponding to each of the data storage time intervals and the read voltage corresponding to the number of data reads.

17. The computer-readable storage medium according to claim 16 , wherein the computer instruction, upon execution by the processor, is further configured to cause the processor to:

acquire the preset data storage time interval information; and

determine the read voltage corresponding to each of the data storage time intervals in the preset data storage time interval information based on a read voltage in a retry table of a solid state disk where the current data block is located.

18. The computer-readable storage medium according to claim 17 , wherein the computer instruction, upon execution by the processor, is further configured to cause the processor to:

read data having a storage time belonging to the data storage time interval based on each of the read voltage in the retry table respectively, so as to obtain a read accuracy rate corresponding to each of the read voltage in the retry table; and

determine a read voltage corresponding to the data storage time interval according to the read accuracy rate.

19. The computer-readable storage medium according to claim 15 , wherein the computer instruction, upon execution by the processor, is further configured to cause the processor to:

acquire the preset data read rule, and store the preset data read rule.

20. The computer-readable storage medium according to claim 15 , wherein the computer instruction, upon execution by the processor, is further configured to cause the processor to:

judge whether a read accuracy rate of the current data block is greater than or equal to a preset accuracy rate threshold value;

determine that the reread error correction of the current data block is successful in response to the read accuracy rate of the current data block being greater than or equal to the preset accuracy rate threshold value; and

determine that the reread error correction of the current data block fails in response to the read accuracy rate of the current data block being smaller than the preset accuracy rate threshold value.