Analog content addressable memory with analog input and analog output
An analog content addressable memory (aCAM) that enables parallel searching of analog ranges of values and generates analog outputs that quantify matches between input data and stored data is disclosed. The input data can be compared with the stored data, and the input data can be determined to match the stored data based on a value associated with the input data being within a range associated with the stored data. The aCAM can generate an analog output that represents a number of matches and a number of mismatches between the input data and the stored data. Based on the analog output, whether the input data matches the stored data and a degree to which the input data matches the stored data can be determined.
1. A method comprising:
generating a match line voltage in an analog content addressable memory (aCAM) that decays over time;
evaluating the match line voltage at a selected time;
determining a non-zero number of mismatches between values of an analog search input word and values of a stored analog word in the aCAM based on the match line voltage at the selected time;
determining the analog search input word matches the stored analog word based on the non-zero number of mismatches between the values of the stored analog word and the values of the analog search input word;
and
generating an analog output indicative of an address of the stored analog word and the non-zero number of mismatches between the values of the analog search input word and the values of the stored analog word;
wherein:
the values of the stored analog word correspond with a set of stored voltage ranges,
the values of the analog search input word correspond with a set of input voltages, each input voltage of the set of input voltages being compared to one stored voltage range of the set of stored voltage ranges, and
a mismatch between a value of the analog search input word and a value of the stored analog word occurs when an input voltage corresponding with the value of the analog search input word is outside a stored voltage range corresponding with the value of the stored analog word, wherein an upper bound voltage of the stored voltage range is associated with a first conductance of a first memristor of the aCAM and a lower bound voltage of the stored voltage range is associated with a second conductance of a second memristor of the aCAM.
2. The method of claim 1 , wherein the analog output is further indicative of a Hamming distance between the analog search input word and the stored analog word.
3. The method of claim 1 , wherein determining that the analog search input word matches the stored analog word is based on the non-zero number of mismatches between the values of the analog search input word and the values of the stored analog word being within a threshold number of mismatches.
4. The method of claim 1 , wherein a stored voltage range in the set of stored voltage ranges is associated with a fuzzy match range, wherein the fuzzy match range extends a matching range of the stored voltage range.
5. The method of claim 1 , wherein a rate at which the match line voltage decays corresponds with the number of mismatches between the values of the analog search input word and the values of the stored analog word.
6. The method of claim 5 , wherein the rate at which the match line voltage decays increases with an increasing number of number of mismatches.
7. An analog content addressable memory (aCAM) configured to perform:
generate a match line voltage in the aCAM that decays over time;
evaluate the match line voltage at a selected time; and
determine a non-zero number of mismatches between values of an analog search input word and values of a stored analog word in the aCAM based on the match line voltage at the selected time;
determine the analog search input word matches a stored analog word in the aCAM based on a non-zero number of mismatches between values of the stored analog word and values of the analog search input word;
and
generate an analog output indicative of an address of the stored analog word and the non-zero number of mismatches between the values of the analog search input word and the values of the stored analog word;
wherein:
the values of the stored analog word correspond with a set of stored voltage ranges,
the values of the analog search input word correspond with a set of input voltages, each input voltage of the set of input voltages being compared to one stored voltage range of the set of stored voltage ranges, and
a mismatch between a value of the analog search input word and a value of the stored analog word occurs when an input voltage corresponding with the value of the analog search input word is outside a stored voltage range corresponding with the value of the stored analog word, wherein an upper bound voltage of the stored voltage range is associated with a first conductance of a first memristor of the aCAM and a lower bound voltage of the stored voltage range is associated with a second conductance of a second memristor of the aCAM.
8. The aCAM of claim 7 , wherein the analog output is further indicative of a Hamming distance between the analog search input word and the stored analog word.
9. The aCAM of claim 7 , wherein determining that the analog search input word matches the stored analog word is based on the non-zero number of mismatches between the values of the analog search input word and the values of the stored analog word being within a threshold number of mismatches.
10. The aCAM of claim 7 , wherein a stored voltage range in the set of stored voltage ranges is associated with a fuzzy match range, wherein the fuzzy match range extends a matching range of the stored voltage range.
11. The aCAM of claim 7 , wherein a rate at which the match line voltage decays corresponds with the number of mismatches between the values of the analog search input word and the values of the stored analog word.
12. The aCAM of claim 11 , wherein the rate at which the match line voltage decays increases with an increasing number of number of mismatches.
13. A system comprising:
a processor configured to execute machine-executable instructions to:
generate a match line voltage in an analog content addressable memory (aCAM) that decays over time;
evaluate the match line voltage at a selected time;
determine a non-zero number of mismatches between values of an analog search input word and values of a stored analog word in the aCAM based on the match line voltage at the selected time;
determine the analog search input word matches the stored analog word based on a non-zero number of mismatches between values of the stored analog word and values of the analog search input word;
and
generate an analog output indicative of an address of the stored analog word and the non-zero number of mismatches between the values of the analog search input word and the values of the stored analog word;
wherein:
the values of the stored analog word correspond with a set of stored voltage ranges,
the values of the analog search input word correspond with a set of input voltages, each input voltage of the set of input voltages being compared to one stored voltage range of the set of stored voltage ranges, and
a mismatch between a value of the analog search input word and a value of the stored analog word occurs when an input voltage corresponding with the value of the analog search input word is outside a stored voltage range corresponding with the value of the stored analog word, wherein an upper bound voltage of the stored voltage range is associated with a first conductance of a first memristor of the aCAM and a lower bound voltage of the stored voltage range is associated with a second conductance of a second memristor of the aCAM.
14. The system of claim 13 , wherein the analog output is further indicative a Hamming distance between the analog search input word and the stored analog word.
15. The system of claim 13 , wherein determining that the analog search input word matches the stored analog word is based on the non-zero number of mismatches between the values of the analog search input word and the values of the stored analog word being within a threshold number of mismatches.
16. The system of claim 13 , wherein a rate at which the match line voltage decays corresponds with the number of mismatches between the values of the analog search input word and the values of the stored analog word.
17. The system of claim 16 , wherein the rate at which the match line voltage decays increases with an increasing number of number of mismatches.