System for detecting LED

1. A system for detecting a light-emitting diode (LED), comprising:

a first transparent substrate; and

a plurality of thin film transistors (TFT) disposed on the first transparent substrate and controlled separately, wherein the plurality of TFTs are in one-to-one correspondence with LEDs to-be-detected in terms of location, wherein

the TFT comprises a protective layer made of a dielectric material, the TFT and a conductive layer that is coupled with the LED corresponding to the TFT form a capacitor, the protective layer serves as a dielectric layer, and the TFT and the conductive layer are used as two electrodes of the capacitor;

the system further comprises a metal line layer disposed between the first transparent substrate and the plurality of TFTs and configured to be coupled with and control separately each of the plurality of TFTs, wherein the metal line layer comprises a data line circuit and a scan line circuit, and circuits on the metal line layer are separately electrically coupled with and power each of the plurality of TFTs respectively, to control each of the plurality of TFTs individually;

a driving voltage having a certain waveform is applied to the metal line layer to energize each TFT, and voltage ramp forward biases the LED in the capacitor, to generate current between two electrodes of the LED through capacitive coupling, and an LED that operates normally emits light and an LED that operates abnormally does not emit light; and

the TFT corresponding to the normally operated LED is powered by a circuit on the metal line layer, and the TFT corresponding to the normally operated LED generates static electricity to absorb the LED normally operated, to achieve batch transfer of LEDs.

2. The system of claim 1 , further comprising:

a conductive layer configured to be coupled with one electrode of each of the LEDs to-be-detected, wherein the other electrode of each of the LEDs to-be-detected is opposite to one of the plurality of TFTs.

3. The system of claim 2 , further comprising:

a second transparent substrate on which the conductive layer is disposed.

4. The system of claim 3 , wherein each of the plurality of TFTs and each of the LEDs are spaced apart by a gap.

5. The system of claim 4 , further comprising:

a sensor configured to detect whether each of the LEDs emits light normally.

6. The system of claim 5 , wherein the sensor is disposed below the second transparent substrate or disposed above the first transparent substrate.

7. The system of claim 1 , wherein the protective layer covers a gate, a drain, and a source of the TFT.

8. The system of claim 7 , wherein the protective layer is made of one of silicon nitride (Si 3 N 4 ), aluminum oxide (Al 2 O 3 ), and hafnium dioxide (HfO 2 ).

9. A method for preparing a system for detecting a light-emitting diode (LED), comprising:

providing a first transparent substrate;

disposing on the first transparent substrate a plurality of thin film transistors (TFT), wherein the plurality of TFTs are controlled separately and in one-to-one correspondence with LEDs to-be-detected in terms of location, wherein the TFT comprises a protective layer made of a dielectric material, the TFT and a conductive layer that is coupled with the LED corresponding to the TFT form a capacitor, the protective layer serves as a dielectric layer, and the TFT and the conductive layer are used as two electrodes of the capacitor; and

providing a metal line layer, wherein the metal line layer is disposed between the first transparent substrate and the plurality of TFTs and configured to be coupled with and control separately each of the plurality of TFTs, wherein the metal line layer comprises a data line circuit and a scan line circuit, and circuits on the metal line layer are separately electrically coupled with and power each of the plurality of TFTs respectively, to control each of the plurality of TFTs individually, wherein

a driving voltage having a certain waveform is applied to the metal line layer to energize each TFT, and voltage ramp forward biases the LED in the capacitor, to generate current between two electrodes of the LED through capacitive coupling, and an LED that operates normally emits light and an LED that operates abnormally does not emit light; and

the TFT corresponding to the normally operated LED is powered by a circuit on the metal line layer, and the TFT corresponding to the normally operated LED generates static electricity to absorb the normally operated LED, to achieve batch transfer of LEDs.

10. The method of claim 9 , further comprising:

providing a conductive layer, wherein the conductive layer is configured to be coupled with one electrode of each of the LEDs to-be-detected.

11. The method of claim 10 , further comprising:

disposing on the conductive layer a second transparent substrate.

12. The method of claim 11 , further comprising:

disposing a sensor below the second transparent substrate or above the first transparent substrate, wherein the sensor is configured to detect whether each of the LEDs emits light normally.

13. A method for detecting a light-emitting diode (LED), comprising:

applying a driving voltage having a certain waveform to a metal line layer of a system for detecting an LED, to drive an LED to-be-detected to emit light, wherein the system for detecting an LED comprises: a first transparent substrate, a plurality of thin film transistors (TFT) disposed on the first transparent substrate and controlled separately, and a sensor disposed below a second transparent substrate or disposed above the first transparent substrate, and wherein the metal line layer is sandwiched between the first transparent substrate and the plurality of TFTs and configured to be coupled with and control separately each of the plurality of TFTs, wherein the metal line layer comprises a data line circuit and a scan line circuit, and circuits on the metal line layer are separately electrically coupled with and power each of the plurality of TFTs respectively, to control each of the plurality of TFTs individually, wherein the plurality of TFTs are in one-to-one correspondence with LEDs to-be-detected in terms of location, wherein the TFT comprises a protective layer made of a dielectric material, the TFT and a conductive layer that is coupled with the LED corresponding to the TFT form a capacitor, the protective layer serves as a dielectric layer, and the TFT and the conductive layer are used as two electrodes of the capacitor, and wherein the driving voltage having the certain waveform is applied to the metal line layer to energize each TFT, and voltage ramp forward biases the LED in the capacitor, to generate current between two electrodes of the LED through capacitive coupling;

determining, by the sensor, that an LED to-be-detected is a normal LED when the LED to-be-detected emits light;

determining, by the sensor, that an LED to-be-detected is an abnormal LED when the LED to-be-detected does not emit light;

powering, by a circuit on the metal line layer, the TFT corresponding to the normal LED, to generate static electricity; and

absorbing the normal LED by the TFT corresponding to the normal LED through the generated static electricity, to achieve batch transfer of LEDs.

14. The method of claim 13 , further comprising:

recording, by the sensor, location information of the normal LED.