Lithography apparatus and method using the same

1. A method, comprising:

loading a wafer onto a wafer chuck of a lithography apparatus;

aligning the wafer chuck to an alignment sensor of the lithography apparatus, wherein the alignment sensor is on a frame structure of the lithography apparatus;

moving the wafer chuck to a position under an opening of the frame structure;

projecting an extreme ultraviolet light through the opening of the frame structure of the lithography apparatus, onto the wafer; and

after aligning the wafer chuck to the alignment sensor, starting an introduction of an airflow from an air curtain module on the wafer chuck toward the frame structure, wherein the air curtain module surrounds the wafer.

2. The method according to claim 1 , wherein introducing the airflow is performed prior to projecting the extreme ultraviolet light.

3. The method according to claim 1 , wherein projecting the extreme ultraviolet light is performed prior to introducing the airflow.

4. The method according to claim 1 , wherein the airflow comprises hydrogen air.

5. The method according to claim 1 , wherein introducing the airflow is such that the airflow is introduced in an airflow direction, and an angle included between the airflow direction and a vertical direction is constant.

6. The method according to claim 1 , wherein introducing the airflow is such that the airflow is introduced in an airflow direction, and an angle included between the airflow direction and a vertical direction is varying.

7. The method according to claim 1 , further comprising: stopping projecting the extreme ultraviolet light onto the wafer; and stopping introducing the air flow toward the frame structure after stopping projecting the extreme ultraviolet light onto the wafer.

8. The method according to claim 1 , further comprising: stopping projecting the extreme ultraviolet light onto the wafer; and stopping introducing the air flow toward the frame structure prior to stopping projecting the extreme ultraviolet light onto the wafer.

9. The method according to claim 1 , wherein the airflow is introduced at a pressure from about 1 KPa to about 50 KPa.

10. The method of claim 1 , wherein the alignment sensor is on a bottom surface of the frame structure.

11. A method, comprising:

aligning a wafer chuck to an alignment sensor of a lithography apparatus;

after aligning the wafer chuck to the alignment sensor of the lithography apparatus, starting an introduction of an airflow from the wafer chuck of the lithography apparatus toward a frame structure of the lithography apparatus by using an air curtain module having a ring shape, wherein the frame structure surrounds a portion of a projection optical system of the lithography apparatus; and

moving the wafer chuck in a horizontal direction such that the air curtain module faces a sensor on a bottom surface of the frame, and the airflow flows toward the sensor.

12. The method according to claim 11 , wherein the airflow comprises clean dry air or nitrogen gas.

13. The method according to claim 11 , further comprising placing a dummy wafer on a wafer table of the wafer chuck, prior to introducing the airflow from the wafer chuck toward the frame structure.

14. The method according to claim 11 , further comprising adjusting a pressure of the airflow.

15. The method according to claim 11 , further comprising adjusting an airflow direction of the airflow.

16. A lithography apparatus, comprising:

a light source;

a wafer stage;

a projection optical system above the wafer stage and connected to the light source;

a frame structure above the wafer stage and having an opening therein, and an alignment sensor arranged on a bottom surface of the frame structure, wherein the opening is configured to accommodate a portion of the projection optical system;

a wafer chuck comprising a wafer table, and an air curtain module, wherein the wafer chuck is disposed between the wafer stage and the frame structure, and is movably coupled to the wafer stage, the wafer table faces the frame structure, the air curtain module surrounds the wafer table, and wherein from a top view, the air curtain module has a continuous rectangular-ring shape having an inner length greater than a diameter of the wafer table, the air curtain module is configured to start an introduction of an airflow toward the frame structure after aligning the wafer chuck to the alignment sensor of the lithography apparatus, and the air curtain module is below the alignment sensor; and

a controller configured to control the air curtain module to start the introduction of the airflow toward the frame structure after aligning the wafer chuck to the alignment sensor of the lithography apparatus.

17. The apparatus according to claim 16 , wherein the air curtain module has four sides, and a distance between any two opposite sides is greater than a width of the opening of the frame.

18. The apparatus according to claim 16 , wherein the air curtain module comprises:

an airflow passage surrounding the wafer table; and

a gas source connected to the airflow passage.

19. The apparatus according to claim 18 , wherein the air curtain module further comprises:

a direction panel connected to the airflow passage and configured to determine an airflow direction of the airflow.

20. The apparatus according to claim 16 , further comprising a level sensor arranged on the bottom surface of the frame structure, wherein the level sensor and the alignment sensor are on the same side of the portion of the projection optical system.