IP Library › Granted Patent US 11,742,275
Granted Patent B2
US 11,742,275 · App. 17/566,523 · Granted Aug 29, 2023

Ground via clustering for crosstalk mitigation

Inventors: Zhiguo Qian (Chandler, AZ); Kemal Aygun (Tempe, AZ); Yu Zhang (Raleigh, NC)
Assignee: Intel Corporation
H01L23/49827H01L23/49816H01L23/49838H01L21/486H01L2924/0002
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Quick Facts
Patent No.
US 11,742,275
App. No.
17/566,523
Granted
Aug 29, 2023
Kind
B2
Abstract

Embodiments of the present disclosure are directed towards techniques and configurations for ground via clustering for crosstalk mitigation in integrated circuit (IC) assemblies. In some embodiments, an IC package assembly may include a first package substrate configured to route input/output (I/O) signals and ground between a die and a second package substrate. The first package substrate may include a plurality of contacts disposed on one side of the first package substrate and at least two ground vias of a same layer of vias, and the at least two ground vias may form a cluster of ground vias electrically coupled with an individual contact. Other embodiments may be described and/or claimed.

Claims (30)

1. A semiconductor package, comprising:

a substrate having a die side and a second side opposite the die side; and

a plurality of ball pads on the second side of the substrate, individual ones of the plurality of ball pads having a first side opposite a second side, and individual ones of the plurality of ball pads having a first conductive via, a second conductive via, and a third conductive via coupled directly to the first side of the ball pad.

2. The semiconductor package of claim 1 , further comprising:

a plurality of solder balls, individual ones of the plurality of solder balls coupled to the second side of a corresponding one of the plurality of ball pads.

3. The semiconductor package of claim 2 , wherein the first conductive via, the second conductive via, and the third conductive via coupled directly to the first side of the corresponding one of the plurality of ball pads are within a footprint of the corresponding individual one of the plurality of solder balls.

4. The semiconductor package of claim 1 , further comprising:

a die coupled to the die side of the substrate.

5. The semiconductor package of claim 1 , further comprising:

an interposer coupled to the second side of the substrate.

6. The semiconductor package of claim 5 , wherein the interposer is coupled to the second side of the substrate by a plurality of solder balls, individual ones of the plurality of solder balls coupled to the second side of a corresponding one of the plurality of ball pads.

7. The semiconductor package of claim 6 , wherein the first conductive via, the second conductive via, and the third conductive via coupled directly to the first side of the corresponding one of the plurality of ball pads are within a footprint of the corresponding individual one of the plurality of solder balls.

8. The semiconductor package of claim 1 , wherein the plurality of ball pads comprise copper.

9. The semiconductor package of claim 1 , wherein one of the plurality of ball pads is coupled to ground.

10. The semiconductor package of claim 1 , wherein the first conductive via, the second conductive via, and the third conductive via extend from the die side of the substrate to the second side of the substrate.

11. A semiconductor package, comprising:

a substrate having a die side and a second side opposite the die side; and

a plurality of ball pads on the second side of the substrate, individual ones of the plurality of ball pads having a first side opposite a second side, and individual ones of the plurality of ball pads having a first conductive via and a second conductive via coupled directly to the first side of the ball pad.

12. The semiconductor package of claim 11 , further comprising:

a plurality of solder balls, individual ones of the plurality of solder balls coupled to the second side of a corresponding one of the plurality of ball pads.

13. The semiconductor package of claim 12 , wherein the first conductive via and the second conductive via coupled directly to the first side of the corresponding one of the plurality of ball pads are within a footprint of the corresponding individual one of the plurality of solder balls.

14. The semiconductor package of claim 11 , further comprising:

a die coupled to the die side of the substrate.

15. The semiconductor package of claim 11 , further comprising:

an interposer coupled to the second side of the substrate.

16. The semiconductor package of claim 15 , wherein the interposer is coupled to the second side of the substrate by a plurality of solder balls, individual ones of the plurality of solder balls coupled to the second side of a corresponding one of the plurality of ball pads.

17. The semiconductor package of claim 16 , wherein the first conductive via and the second conductive via coupled directly to the first side of the corresponding one of the plurality of ball pads are within a footprint of the corresponding individual one of the plurality of solder balls.

18. The semiconductor package of claim 11 , wherein the plurality of ball pads comprise copper.

19. The semiconductor package of claim 11 , wherein one of the plurality of ball pads is coupled to ground.

20. The semiconductor package of claim 11 , wherein the first conductive via and the second conductive via extend from the die side of the substrate to the second side of the substrate.

Continuity (7)
Continuation 17074820 · Oct 20, 2020
Continuation 16509387 · Jul 11, 2019
Continuation 16026824 · Jul 3, 2018
Continuation 15369659 · Dec 5, 2016
Continuation 14943880 · Nov 17, 2015
Continuation 14575956 · Dec 18, 2014
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