Semiconductor module
A semiconductor module includes a multilayer substrate having a main wiring layer formed therein, a main current flowing in the main wiring layer when the semiconductor device is turned on, a first and second semiconductor elements, each of which has a top electrode on a top surface thereof and a bottom electrode on a bottom surface thereof, and is disposed on a top surface of the main wiring layer to which the bottom electrode is conductively connected, a metal plate having an end portion, a bottom surface of the end portion being conductively connected to the top electrode of the first semiconductor element, and a control board including an insulating plate disposed on the top surface of the end portion and a control wiring layer disposed on a top surface of the insulating plate for controlling turning on and off of the first and second semiconductor elements.
1. A semiconductor module comprising:
a multilayer substrate having a main wiring layer formed therein, a main current flowing in the main wiring layer when the semiconductor module is turned on;
a first semiconductor element and a second semiconductor element, each of which has a top surface and a bottom surface that are opposite to each other, has a top electrode disposed on the top surface thereof and a bottom electrode disposed on the bottom surface thereof, and
is disposed on the main wiring layer to which the bottom electrode is conductively connected;
a metal plate having an end portion that is located on the top surface of the first semiconductor element, the end portion having a top surface and a bottom surface that are opposite to each other, the bottom surface thereof being conductively connected to the top electrode of the first semiconductor element; and
a control board mounted on the top surface of the end portion, wherein
the control board includes
an insulating plate disposed on the top surface of the end portion, and
a control wiring layer for controlling turning on and off of the first and second semiconductor elements, and being disposed on the top surface of the insulating plate, the first and second semiconductor elements each include a gate electrode, and the control wiring layer includes
a gate wiring member,
a gate wiring layer connected to the gate electrode of each of the first and second semiconductor elements through the gate wiring member,
an auxiliary wiring member, and
an auxiliary wiring layer connected to the top electrode of each of the first and second semiconductor elements through the auxiliary wiring member.
2. The semiconductor module according to claim 1 , further comprising a control terminal for external connection provided adjacent to the first semiconductor element, wherein
the first and second semiconductor elements are connected in parallel and arranged in a predetermined direction to form an arm,
the metal plate is formed in plurality, each of the metal plates is electrically connected to a corresponding one of the first and second semiconductor elements, and
the control board is disposed on the top surface of the end portion of the metal plate that is provided on the first semiconductor element.
3. The semiconductor module according to claim 2 , wherein
the control terminal is disposed off-center of the semiconductor module at one side of the semiconductor module when viewed from the predetermined direction, and
the first semiconductor element is disposed closer to the control terminal than is the second semiconductor element,
the control board is disposed on the top surface of the end portion of the metal plate provided on the first semiconductor element.
4. The semiconductor module according to claim 1 , wherein
the control board is disposed directly above the first semiconductor element.
5. The semiconductor module according to claim 1 , wherein
the gate wiring layer and the auxiliary wiring layer extend in parallel to each other in a predetermined direction.
6. The semiconductor module according to claim 1 , further comprising a chip resistor disposed on the gate wiring layer.
7. The semiconductor module according to claim 1 , further comprising a chip resistor disposed on the auxiliary wiring layer.
8. The semiconductor module according to claim 1 , wherein
a size of the control board is smaller than a size of the end portion in a plan view.
9. The semiconductor module according to claim 1 , wherein
the control board, the first semiconductor element, and the second semiconductor element each are formed in plurality, and
a total number of the control boards is less than a total number of the first and second semiconductor elements.
10. The semiconductor module according to claim 1 , wherein
the first semiconductor element has a sensing function, and
the control board is disposed above the first semiconductor element.
11. The semiconductor module according to claim 1 , wherein
the main wiring layer in the multilayer substrate has a plurality of overlapping layers with gaps therebetween,
the control wiring layer on the insulating plate has a plurality of overlapping layers with gaps therebetween, and
the gap between two of the layers of the control wiring layer that are adjacent to each other is less than the gap between two of the layers of the main wiring layer that are adjacent to each other.
12. The semiconductor module according to claim 1 , wherein
the gate wiring layer and the auxiliary wiring layer each include a plurality of gate wiring parts and a plurality of auxiliary wiring parts that are alternately arranged.
13. The semiconductor module according to claim 1 , wherein
the gate wiring layer has a gate input end, and first and second gate output ends branching out from the gate input end,
the auxiliary wiring layer has an auxiliary input end, and first and second auxiliary output ends branching out from the auxiliary input end,
the first gate output end is connected to the gate electrode of the first semiconductor element,
the second gate output end is connected to the gate electrode of the second semiconductor element,
the first auxiliary output end is connected to the top electrode of the first semiconductor element, and
the second auxiliary output end is connected to the top electrode of the second semiconductor element.
14. The semiconductor module according to claim 13 , wherein
the gate electrode is disposed off-center of the semiconductor module near a periphery of each of the first and second semiconductor elements,
the first and second semiconductor elements are disposed such that the respective gate electrodes face each other, and
the first gate output end, the first auxiliary output end, the second gate output end, and the second auxiliary output end are provided at positions where the wiring members from each of the output ends to each of the semiconductor elements do not intersect.
15. The semiconductor module according to claim 14 , wherein
the control wiring layer on the insulating plate of the control board includes a plurality of layers that overlap one another in a depth direction.
16. The semiconductor module according to claim 1 , wherein
the first and second semiconductor elements each include a metal-oxide-semiconductor field-effect transistor (MOSFET) element or an insulated-gate bipolar transistor (IGBT) element.