Cascode amplifier optimization

Inventors: Yun Shi (San Diego, CA); Paul T. DiCarlo (Marlborough, MA); Hailing Wang (Acton, MA)

H01L29/66492 H01L21/26513 H01L21/823412 H01L21/823418 H01L21/823462 H01L21/823493 H01L21/84 H01L29/1041 H01L29/42368 H01L29/66659 H01L29/66772 H01L29/7833 H01L29/7835 H03F1/223 H03F3/195 H03F3/245 H01L21/26586 H01L27/1203 H01L29/1045 H03F3/04 H03F2200/451

View Patent ↗

Loading inventors, assignments & file history…

Monitor This Case

Get email alerts when status or documents change.

Order Certified Copies

Most orders are placed with the USPTO same day — all within 24 business hours.

Order via The Patent Place →

Pre-filled with this patent's details

Quick Facts

Patent No.: US 11,742,408
App. No.: 17/140,490
Granted: Aug 29, 2023
Kind: B2

External Links

USPTO Patent Center↗ Full Patent PDF↗

Abstract

A method of fabricating a cascode amplifier including a common-source device and a common-gate device includes performing one or more of ion implantation of a well of the common-source device, ion implantation of a source extension and/or drain extension of the common-source device, or a halo ion implantation of the common-source device with one or more of a different ionic species, a different dosage, a different energy, or a different tilt angle than a corresponding one or more of ion implantation of a well of the common-gate device, ion implantation of a source and/or drain extension of the common-gate device, or a halo ion implantation of the common-gate device.

Claims (18)

1. A method of fabricating a cascode amplifier including a common-source device and a common-gate device, the method comprising doping one of the common-source device and common-gate device with a dopant that changes a growth rate of a gate oxide of the one of the common-source device and common-gate device relative to the other of the common-source device and common-gate device.

2. The method of claim 1 further comprising fabricating one of the common-source device and common-gate device with a gate oxide thickness that is thicker than the gate oxide thickness of the other of the common-source device and common-gate device.

3. The method of claim 1 wherein doping the one of the common-source device and common-gate device with the dopant that changes the growth rate of the gate oxide includes doping the one of the common-source device and common-gate device with the dopant that reduces the growth rate of the gate oxide.

4. The method of claim 1 wherein doping the one of the common-source device and common-gate device with the dopant that changes the growth rate of the gate oxide includes doping the one of the common-source device and common-gate device with the dopant that increases the growth rate of the gate oxide.

5. The method of claim 1 further comprising fabricating one of the common-source device and common-gate device with a gate oxide thickness proximate a drain of the one of the common-source device and common-gate device that is thicker than a gate oxide thickness proximate a source of the one of the common-source device and common-gate device.

6. The method of claim 1 further comprising creating a doping profile on a source side of a well of one of the common-source device and common-gate device that is asymmetric with respect to a drain side of the well of the one of the common-source device and common-gate device.

7. The method of claim 1 further comprising creating a doping profile of a well of the common-source device that is different than a doping profile of a well of the common-gate device.

8. The method of claim 1 further comprising creating a doping profile of a source or drain of the common-source device is different than a doping profile of a source or drain of the common-gate device.

9. The method of claim 1 further comprising forming a module for an electronic device including the cascode amplifier.

10. The method of claim 9 further comprising forming an electronic device including the module of claim 9 .

11. The method of claim 9 further comprising forming a radio frequency device including the module of claim 9 .

12. A method of fabricating a cascode amplifier including a common-source device and a common-gate device, the method comprising:

performing one or more of ion implantation of a well of the common-source device, ion implantation of a source extension and/or drain extension of the common-source device, or a halo ion implantation of the common-source device with one or more of a different ionic species, a different dosage, a different energy, or a different tilt angle than a corresponding one or more of ion implantation of a well of the common-gate device, ion implantation of a source and/or drain extension of the common-gate device, or a halo ion implantation of the common-gate device; and

creating a doping profile of a well of the common-source device that is different than a doping profile of a well of the common-gate device.

13. The method of claim 12 further comprising forming a module for an electronic device including the cascode amplifier.

14. The method of claim 13 further comprising forming an electronic device including the module of claim 13 .

15. The method of claim 13 further comprising forming a radio frequency device including the module of claim 13 .

16. A method of fabricating a cascode amplifier including a common-source device and a common-gate device, the method comprising performing ion implantation of a well of the common-source device with one or more of a different ionic species, a different dosage, a different energy, or a different tilt angle than a corresponding ion implantation of a well of the common-gate device.

Continuity (3)

Division 15894037 · Feb 12, 2018

Provisional Application 62459380 · Feb 15, 2017

Related Publication 20210151582A1 · May 20, 2021