Electronic device and manufacturing method thereof
The disclosure discloses a method for manufacturing light-emitting diode (LED) chips. The manufacturing method includes: providing a plurality of LED elements; randomly mixing the plurality of LED elements; performing a mesa process on the plurality of LED elements; and forming at least one pair of electrodes on the plurality of LED elements. An electronic device includes the LED chips.
1. A method for manufacturing a diode chip, comprising:
providing a plurality of diode elements;
randomly mixing the plurality of diode elements;
after randomly mixing the plurality of diode elements, dividing the plurality of diode elements in a number of N into a number of M, wherein M and N are integers, and M>N; and
forming at least one pair of electrodes on the divided plurality of diode elements.
2. The method according to claim 1 , wherein the plurality of diode elements are mixed in a mixing device, and the mixing device contains a liquid.
3. The method according to claim 1 , wherein the pair of electrodes are formed by a deposition process.
4. The method according to claim 1 , wherein the pair of electrodes are formed by a printing process.
5. The method according to claim 1 , further comprising:
providing a growth substrate;
forming the plurality of diode elements on the growth substrate; and
removing the growth substrate.
6. The method according to claim 1 , wherein the step of providing the plurality of diode elements comprises:
providing a growth substrate;
forming an epitaxial layer with a stack structure on the growth substrate;
dividing the epitaxial layer into the plurality of diode elements; and
separating the plurality of diode elements from the growth substrate.
7. The method according to claim 6 , wherein the stack structure of the epitaxial layer and the plurality of diode elements include an N-type layer and a P-type layer.
8. The method according to claim 7 , wherein one of the at least one pair of electrodes is formed to electrically connect to one of the N-type layer and the P-type layer.
9. A carrier combination, comprising:
a carrier; and
a diode chip disposed on the carrier, wherein the diode chip is manufactured by the method according to claim 1 .
10. The carrier combination according to claim 9 , wherein the carrier combination further includes a positioning layer, and the diode chip is formed on the positioning layer.
11. An electronic device, comprising:
a driving substrate; and
a diode chip bonded on the driving substrate, wherein the diode chip is manufactured by the method according to claim 1 .
12. A method for manufacturing an electronic device, comprising:
providing a growth substrate;
forming an epitaxial layer with a stack structure on the growth substrate;
dividing the epitaxial layer into a plurality of diode elements;
separating the plurality of diode elements from the growth substrate;
after randomly mixing the plurality of diode elements, dividing the plurality of diode elements in a number of N into a number of M, wherein M and N are integers, and M>N;
forming at least one pair of electrodes on the divided plurality of diode elements to form at least one diode chip; and
bonding the at least one diode chip on a driving substrate.
13. The method according to claim 12 , wherein the plurality of diode elements are mixed in a mixing device, and the mixing device contains a liquid.
14. The method according to claim 12 , wherein the pair of electrodes are formed by a deposition process.
15. The method according to claim 12 , wherein the pair of electrodes are formed by a printing process.
16. The method according to claim 12 , wherein the stack structure of the epitaxial layer and the plurality of diode elements include an N-type layer and a P-type layer.
17. The method according to claim 16 , wherein one of the at least one pair of electrodes is formed to electrically connect to one of the N-type layer and the P-type layer.