Apparatus and method for processing substrate
An apparatus includes a support unit supporting a substrate including a film, a laser generation unit that generates a laser beam to process the film, a beam splitter that splits the laser beam into a first laser beam travelling along a first path toward an upper edge of the substrate and a second laser beam travelling along a second path toward a lower edge of the substrate, a first beam shaping unit on the first path shaping the first laser beam, a second beam shaping unit on the second path shaping the second laser beam, a first beam scanning unit downstream of the first beam shaping unit that applies the first laser beam to the upper edge in the manner of scanning, and a second beam scanning unit downstream of the second beam shaping unit that applies the second laser beam to the lower edge in the manner of scanning.
1. An apparatus for processing a substrate, the apparatus comprising:
a support unit configured to support the substrate including a film to be removed;
a laser generation unit configured to generate a laser beam to process the film to be removed;
a beam splitter configured to split the laser beam emitted from the laser generation unit and guided to the beam splitter into a first laser beam travelling along a first path toward an upper edge of the substrate and an entirety of a remaining laser beam to a second laser beam travelling along a second path toward a lower edge of the substrate;
a first beam shaping unit provided on the first path and configured to shape the first laser beam;
a second beam shaping unit provided on the second path and configured to shape the second laser beam;
a mirror located outside of the beam splitter in an exit path of the remaining laser beam to change a direction of the remaining laser beam toward the second beam shaping unit;
a first beam scanning unit provided downstream of the first beam shaping unit on the first path and configured to apply the first laser beam that is completely exited from the first beam shaping unit to the upper edge of the substrate in a manner of scanning; and
a second beam scanning unit provided downstream of the second beam shaping unit on the second path and configured to apply the second laser beam that is completely exited from the second beam shaping unit to the lower edge of the substrate in the manner of scanning,
wherein a beam shape of the first laser beam shaped by the first beam shaping unit differs from a beam shape of the second laser beam shaped by the second beam shaping unit.
2. The apparatus of claim 1 , wherein a film condition of the upper edge of the substrate differs from a film condition of the lower edge of the substrate.
3. The apparatus of claim 1 , wherein the substrate is simultaneously processed by the first laser beam and the second laser beam.
4. The apparatus of claim 1 , wherein the second laser beam shaped by the second beam shaping unit has a larger cross-section than the first laser beam shaped by the first beam shaping unit.
5. The apparatus of claim 1 , wherein energy per unit area of the first laser beam shaped by the first beam shaping unit is greater than energy per unit area of the second laser beam shaped by the second beam shaping unit.
6. The apparatus of claim 1 , wherein a film etching rate of the first laser beam shaped by the first beam shaping unit is greater than a film etching rate of the second laser beam shaped by the second beam shaping unit.
7. The apparatus of claim 1 , wherein scanning speed of the first beam scanning unit differs from scanning speed of the second beam scanning unit.
8. The apparatus of claim 1 , wherein scanning speed of the first beam scanning unit is lower than scanning speed of the second beam scanning unit.