Ion filter using aperture plate with plurality of zones

1. A method for using ion filtering to adjust the number of ions delivered to a substrate, the method comprising:

providing a process chamber;

providing a plasma source operatively connected to the process chamber;

providing a substrate support within the process chamber;

providing the substrate onto the substrate support;

providing a plurality of electrical bias sources;

providing a first aperture plates having a first plurality of apertures and a first plurality of aperture plate zones in the process chamber, providing a second aperture plate having a second plurality of apertures and a second plurality of aperture plate zones in the process chamber;

generating a plasma using the plasma source;

processing the substrate on the substrate support using the generated plasma while said first aperture plate and said second aperture plate are positioned between the plasma source and the substrate, while a first portion of the first plurality of apertures of said first aperture plate are aligned with a second portion of the second plurality of apertures of said second aperture plate, while at least one aperture on said first aperture plate does not overlap any aperture on said second aperture plate, while said first aperture plate is adjacent to said second aperture plate, and while no other aperture plate is between said first aperture plate and said second aperture plate; and

applying a separate bias voltage from the plurality of electrical bias sources to at least two aperture plate zones of the plurality of aperture plate zones of said first aperture plate and at least two aperture plate zones of the plurality of aperture plate zones of said second aperture plate during the plasma processing of the substrate.

2. The method according to claim 1 , wherein at least one aperture plate zone of the plurality of aperture plate zones is grounded for a period of time during the plasma processing of the substrate.

3. A method for using ion filtering to adjust the number of ions delivered to a substrate, the method comprising:

providing a process chamber;

providing a plasma source operatively connected to the process chamber;

providing a substrate support within the process chamber;

providing the substrate onto the substrate support;

providing an electrical bias source;

providing a first aperture plates having a first plurality of apertures in the process chamber, providing a second aperture plate having a second plurality of apertures in the process chamber;

generating a plasma using the plasma source;

processing the substrate on the substrate support using the generated plasma while said first aperture plate and said second aperture plate are positioned between the plasma source and the substrate, while a first portion of the first plurality of apertures of said first aperture plate are aligned with a second portion of the second plurality of apertures of said second aperture plate, while at least one aperture on said first aperture plate does not overlap any aperture on said second aperture plate, while said first aperture plate is adjacent to said second aperture plate, and while no other aperture plate is between said first aperture plate and said second aperture plate; and

applying variable bias voltage from the electrical bias source to at least one of the plurality of aperture plates, said bias voltage being varied as a function of time during the plasma processing of the substrate.

4. The method according to claim 3 , wherein the substrate further comprising a semiconductor wafer on tape on a frame.

5. The method according to claim 3 , wherein at least one of the plurality of aperture plates is actively cooled for a period of time during the plasma processing of the substrate.

6. The method according to claim 3 , wherein at least one of the plurality of aperture plates is grounded for a period of time during the plasma processing of the substrate.

7. The method according to claim 3 , wherein at least one of the plurality of aperture plates is positioned non-planar to at least one of the plurality of aperture plates during the plasma processing of the substrate.

8. The method according to claim 3 , wherein at least one of the plurality of aperture plates is positioned non-parallel to at least one of the plurality of aperture plates during the plasma processing of the substrate.

9. The method according to claim 3 , wherein the plasma processing of the substrate further comprising exposing the substrate to a plasma time division multiplex process which alternates between deposition and etching on the substrate.

10. A method for using ion filtering to adjust the number of ions delivered to a substrate, the method comprising:

providing a process chamber;

providing a plasma source operatively connected to the process chamber;

providing a substrate support within the process chamber;

providing the substrate onto the substrate support;

providing a plurality of electrical bias sources;

providing a first aperture plates having a first plurality of apertures and a first plurality of aperture plate zones in the process chamber, providing a second aperture plate having a second plurality of apertures and a second plurality of aperture plate zones;

generating a plasma using the plasma source;

processing the substrate on the substrate support using the generated plasma while said first aperture plate and said second aperture plate are positioned between the plasma source and the substrate, while a first portion of the first plurality of apertures of said first aperture plate are aligned with a second portion of the second plurality of apertures of said second aperture plate, while at least one aperture on said first aperture plate does not overlap any aperture on said second aperture plate, while said first aperture plate is adjacent to said second aperture plate, and while no other aperture plate is between said first aperture plate and said second aperture plate; and

applying a separate bias voltage from the plurality of electrical bias sources to at least two aperture plate zones of the plurality of aperture plate zones of said first aperture plate and at least two aperture plate zones of the plurality of aperture plate zones of said second aperture plate during the plasma processing of the substrate, at least one bias voltage being varied as a function of time during the plasma processing of the substrate.

11. The method according to claim 10 , wherein at least one of the plurality of aperture plate zones further comprising an annular geometry.

12. The method according to claim 10 , wherein the substrate further comprising a semiconductor wafer on tape on a frame.

13. The method according to claim 10 , wherein at least one aperture plate zone of the plurality of aperture plate zones is actively cooled for a period of time during the plasma processing of the substrate.

14. The method according to claim 10 , wherein at least one aperture plate zone of the plurality of aperture plate zones is grounded for a period of time during the plasma processing of the substrate.

15. The method according to claim 10 , wherein at least one of the plurality of aperture plates is positioned non-planar to at least one of the plurality of aperture plates during the plasma processing of the substrate.

16. The method according to claim 10 , wherein at least one of the plurality of aperture plates is positioned non-parallel to at least one of the plurality of aperture plates during the plasma processing of the substrate.

17. The method according to claim 10 , wherein the plasma processing of the substrate further comprising exposing the substrate to a plasma time division multiplex process which alternates between deposition and etching on the substrate.