IP Library Granted Patent US 11,749,531
Granted Patent B2
US 11,749,531 · App. 16/123,632 · Granted Sep 5, 2023

Polishing method, and polishing composition and method for producing the same

Inventors: Yoshihiro Izawa (Kiyosu, JP); Kenta Ide (Kiyosu, JP)
Assignee: FUJIMI INCORPORATED
H01L21/3212C09G1/02C09G1/16C09K3/1463H01L21/31053
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,749,531
App. No.
16/123,632
Granted
Sep 5, 2023
Kind
B2
Abstract

A polishing method according to the present invention, includes polishing a polishing object containing a silicon material by using a polishing composition containing abrasive grains, a tri- or more polyvalent hydroxy compound and a dispersing medium and having pH of less than 6.0.

Claims (24)

1. A polishing method, comprising polishing a polishing object containing a silicon material by using a polishing composition containing abrasive grains, a tri - or more polyvalent hydroxy compound, and a dispersing medium and having pH of less than 6.0,

wherein the abrasive grains are cation-modified colloidal silica, and

wherein the polishing composition does not comprise an oxidizing agent.

2. The polishing method according to claim 1 , wherein the tri- or more polyvalent hydroxy compound has a molecular weight of 90 or more.

3. The polishing method according to claim 1 , wherein the tri- or more polyvalent hydroxy compound is a sugar alcohol.

4. The polishing method according to claim 1 , wherein the pH is 2.0 or more and 5.5 or less.

5. The polishing method according to claim 1 , wherein the silicon material has an oxygen atom and a silicon atom.

6. The polishing method of claim 1 , wherein the tri- or more polyvalent hydroxy compound is at least one selected from the group consisting of (2R,3R,4S)-pentane-1,2,3,4,5-pentole, (2R,3R,4S,5S)-hexane-1,2,3,4,5,6-hexol, and xylitol.

7. The polishing composition according to claim 1 , wherein the polishing composition does not comprise anion-modified colloidal silica.

8. A polishing method, comprising polishing a polishing object containing a silicon material by using a polishing composition consisting of abrasive grains, a tri - or more polyvalent hydroxy compound, a pH adjusting agent, and a dispersing medium and having pH of less than 6.0,

wherein the abrasive grains are cation-modified colloidal silica,

wherein the polishing composition does not comprise an oxidizing agent.

9. The polishing method according to claim 8 , wherein the tri - or more polyvalent hydroxy compound has a molecular weight of 90 or more.

10. The polishing method according to claim 8 , wherein the tri - or more polyvalent hydroxy compound is a sugar alcohol.

11. The polishing method according to claim 8 , wherein the pH is 2.0 or more and 5.5 or less.

12. The polishing method according to claim 8 , wherein the silicon material has an oxygen atom and a silicon atom.

13. The method of claim 8 , wherein the polishing composition does not comprise anion-modified colloidal silica.

14. A polishing method, comprising polishing a polishing object containing a silicon material by using a polishing composition consisting of abrasive grains, a tri - or more polyvalent hydroxy compound, a pH adjusting agent, an additive, and a dispersing medium and having pH of less than 6.0,

wherein the abrasive grains are cation-modified colloidal silica, and

the additive is at least one selected from the group consisting of antiseptic agents, antifungal agents, and water-soluble polymers.

15. The polishing method according to claim 14 , wherein the tri - or more polyvalent hydroxy compound has a molecular weight of 90 or more.

16. The polishing method according to claim 14 , wherein the tri - or more polyvalent hydroxy compound is a sugar alcohol.

17. The polishing method according to claim 14 , wherein the pH is 2.0 or more and 5.5 or less.

18. The polishing method according to claim 14 , wherein the silicon material has an oxygen atom and a silicon atom.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 6, 2018
From: IZAWA, YOSHIHIRO; IDE, KENTA
To: FUJIMI INCORPORATED
Reel/Frame 046805/0434 →
Priority Claims (1)
JP 2017-174193 · Sep 11, 2017 · national
Continuity (1)
Related Publication 20190080927A1 · Mar 14, 2019