Display panel and display device

1. A display panel, comprising:

a base substrate;

a first transistor and a second transistor, wherein the first transistor and the second transistor are formed on the base substrate, wherein the first transistor comprises a first active layer, a first gate, a first source and a first drain, and wherein the first active layer comprises silicon; wherein the second transistor comprises a second active layer, a second gate, a second source, and a second drain, and wherein the second active layer comprises an oxide semiconductor and is disposed on one side of the first active layer facing away from the base substrate; and

a first insulating layer and a second insulating layer, wherein the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer, and wherein the second insulating layer is disposed on one side of the second active layer facing towards the base substrate,

wherein a concentration of oxygen in the first insulating layer is lower than a concentration of oxygen in the second insulating layer,

wherein the display panel comprises a pixel circuit and a driver circuit providing a drive signal for the pixel circuit, wherein the driver circuit comprises the second transistor, and wherein the pixel circuit comprises the first transistor or wherein the driver circuit comprises the first transistor, and

wherein the first insulating layer comprises silicon oxide SiO x and the second insulating layer comprises silicon oxide SiO y , wherein x is a ratio of a number of oxygen atoms to a number of silicon atoms in the first insulating layer, wherein y is a ratio of a number of oxygen atoms to a number of silicon atoms in the second insulating layer, and wherein x<y.

2. The display panel of claim 1 , wherein a ratio of the concentration of oxygen to a concentration of silicon in the first insulating layer is A, wherein a ratio of the concentration of oxygen to a concentration of silicon in the second insulating layer is B, and

A<B.

3. The display panel of claim 1 , wherein

the second transistor comprises a third gate disposed on one side of the second insulating layer facing towards the base substrate, and wherein a thickness of the first insulating layer is less than a thickness of the second insulating layer.

4. The display panel of claim 3 , wherein

in the second insulating layer, a concentration of oxygen on one side facing towards the second active layer is higher than a concentration of oxygen on one side facing away from the second active layer.

5. The display panel of claim 4 , wherein

the second insulating layer comprises a first sub-insulating layer and a second sub-insulating layer, wherein the second sub-insulating layer is disposed on one side of the first sub-insulating layer facing away from the second active layer, wherein each of the first sub-insulating layer and the second sub-insulating layer comprises silicon oxide, and wherein a concentration of oxygen in the first sub-insulating layer is higher than a concentration of oxygen in the second sub-insulating layer.

6. The display panel of claim 5 , wherein

a concentration of hydrogen in the second sub-insulating layer is higher than a concentration of oxygen in the first sub-insulating layer.

7. The display panel of claim 1 , wherein

the display panel further comprises a third insulating layer disposed on one side of the second gate facing away from the base substrate, and wherein

a concentration of oxygen in the third insulating layer is higher than the concentration of oxygen in the first insulating layer.

8. The display panel of claim 7 , wherein

the concentration of oxygen in the third insulating layer is lower than the concentration of oxygen in the second insulating layer.

9. The display panel of claim 7 , wherein

a ratio of the concentration of oxygen to a concentration of silicon in the first insulating layer is A, wherein a ratio of the concentration of oxygen to a concentration of silicon in the second insulating layer is B, and wherein a ratio of the concentration of oxygen to a concentration of silicon in the third insulating layer is C, wherein

( B− 1)≤2( C− 1)−( A− 1).

10. The display panel of claim 9 , wherein

( B− 1)−( C− 1)≤½×[( C− 1)−( A− 1)].

11. The display panel of claim 1 , wherein

the pixel circuit further comprises a third transistor, wherein the third transistor comprises a third active layer, a third source, a third drain, and a fourth gate, and the third active layer contains an oxide semiconductor; and

wherein the display panel further comprises a fourth insulating layer and a fifth insulating layer, wherein the fourth insulating layer is disposed on one side of the third active layer facing away from the base substrate and between the third active layer and the fourth gate, and wherein the fifth insulating layer is disposed on one side of the third active layer facing towards the base substrate, wherein

a concentration of oxygen in the fourth insulating layer is lower than a concentration of oxygen in the fifth insulating layer.

12. The display panel of claim 11 , wherein

the third transistor is a switch transistor of the pixel circuit; and

wherein a difference between the concentration C1 of oxygen in the first insulating layer and the concentration C2 of oxygen in the second insulating layer is R1=C2−C1, wherein a difference between the concentration C4 of oxygen in the fourth insulating layer and the concentration C5 of oxygen in the fifth insulating layer is R2=C5−C4, and R1≥R2.

13. The display panel of claim 11 , wherein

the third transistor is a switch transistor of the pixel circuit, and

wherein the concentration of oxygen in the first insulating layer is lower than the concentration of oxygen in the fourth insulating layer.

14. The display panel of claim 11 , wherein

the third transistor is a drive transistor of the pixel circuit; and

wherein a difference between the concentration C1 of oxygen in the first insulating layer and the concentration C2 of oxygen in the second insulating layer is R1=C2−C1, and wherein a difference between the concentration C4 of oxygen in the fourth insulating layer and the concentration C5 of oxygen in the fifth insulating layer is R2=C5−C4, and wherein R1≤R2.

15. The display panel of claim 11 , wherein

the third transistor is a drive transistor of the pixel circuit; and

wherein the concentration of oxygen in the first insulating layer is higher than the concentration of oxygen in the fourth insulating layer.

16. The display panel of claim 11 , wherein

the display panel further comprises a fourth transistor, wherein the fourth transistor comprises a fourth active layer, a fourth source, a fourth drain, and a fifth gate, and wherein the fourth active layer contains an oxide semiconductor; and

wherein the display panel further comprises a sixth insulating layer and a seventh insulating layer, wherein the sixth insulating layer is disposed on one side of the fourth active layer facing away from the base substrate and between the fourth active layer and the fifth gate, and wherein the seventh insulating layer is disposed on one side of the fourth active layer facing towards the base substrate, wherein

a concentration of oxygen in the sixth insulating layer is lower than a concentration of oxygen in the seventh insulating layer.

17. The display panel of claim 16 , wherein

the third transistor is a drive transistor of the pixel circuit, and wherein the fourth transistor is a switch transistor of the pixel circuit, wherein

a difference between the concentration C4 of oxygen in the fourth insulating layer and the concentration C5 of oxygen in the fifth insulating layer is R2=C5−C4, wherein a difference between the concentration C6 of oxygen in the sixth insulating layer and the concentration C7 of oxygen in the seventh insulating layer is R3=C7−C6, and wherein

R 2≥ R 3.

18. The display panel of claim 16 , wherein

the third transistor is a drive transistor of the pixel circuit, and wherein the fourth transistor is a switch transistor of the pixel circuit, and

the wherein concentration of oxygen in the fourth insulating layer is lower than the concentration of oxygen in the sixth insulating layer.

19. A display panel, comprising:

a base substrate;

a first transistor and a second transistor, wherein the first transistor and the second transistor are formed on the base substrate, wherein the first transistor comprises a first active layer, a first gate, a first source, and a first drain, wherein the first active layer comprises silicon, wherein the second transistor comprises a second active layer, a second gate, a third gate, a second source, and a second drain, and wherein the second active layer comprises an oxide semiconductor and is disposed on one side of the first active layer facing away from the base substrate; and

a first insulating layer and a second insulating layer, wherein the first insulating layer and the second insulating layer are disposed on two sides of the second active layer, respectively, wherein the first insulating layer is disposed between the second gate and the second active layer, wherein the second insulating layer is disposed between the third gate and the second active layer, and wherein a thickness of the first insulating layer is less than a thickness of the second insulating layer,

wherein a concentration of oxygen in the first insulating layer is lower than a concentration of oxygen in the second insulating layer,

wherein the display panel comprises a pixel circuit and a driver circuit providing a drive signal for the pixel circuit, wherein the driver circuit comprises the second transistor, and wherein the pixel circuit comprises the first transistor or wherein the driver circuit comprises the first transistor, and

wherein the first insulating layer comprises silicon oxide SiO x and the second insulating layer comprises silicon oxide SiO y , wherein x is a ratio of a number of oxygen atoms to a number of silicon atoms in the first insulating layer, wherein y is a ratio of a number of oxygen atoms to a number of silicon atoms in the second insulating layer, and wherein x<y.

20. A display panel, comprising:

a base substrate;

a first transistor and a second transistor, wherein the first transistor and the second transistor are formed on the base substrate, wherein the first transistor comprises a first active layer, a first gate, a first source and a first drain, and wherein the first active layer comprises silicon; wherein the second transistor comprises a second active layer, a second gate, a second source, and a second drain, and wherein the second active layer comprises an oxide semiconductor and is disposed on one side of the first active layer facing away from the base substrate; and

a first insulating layer and a second insulating layer, wherein the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer, and wherein the second insulating layer is disposed on one side of the second active layer facing towards the base substrate,

wherein a concentration of oxygen in the first insulating layer is lower than a concentration of oxygen in the second insulating layer,

wherein the display panel comprises a pixel circuit and a driver circuit providing a drive signal for the pixel circuit, wherein the driver circuit comprises the second transistor, and wherein the pixel circuit comprises the first transistor or wherein the driver circuit comprises the first transistor, and

wherein the second transistor comprises a third gate disposed on one side of the second insulating layer facing towards the base substrate, in the second insulating layer, a concentration of oxygen on one side facing towards the second active layer is higher than a concentration of oxygen on one side facing away from the second active layer.