Semiconductor device including optical through via and method of making

1. A semiconductor device comprising:

a substrate, wherein the substrate comprises a semiconductor material;

a waveguide on a first side of the substrate;

a photodetector (PD) on a second side of the substrate, opposite the first side of the substrate;

an optical through via (OTV) optically connecting the PD with the waveguide, wherein the OTV extends through the substrate from the first side of the substrate to the second side of the substrate;

a first beam deflector in the waveguide on the first side of the substrate; and

a second beam deflector on the second side of the substrate, wherein the first beam deflector is in optical communication with the second beam deflector through the OTV.

2. The semiconductor device of claim 1 , wherein at least one of the first beam deflector or the second beam deflector comprises a planar reflection surface.

3. The semiconductor device of claim 1 , wherein the PD is in optical communication with the first beam deflector by the second beam deflector.

4. The semiconductor device of the claim 1 , wherein the first beam deflector comprises a first control element, the waveguide comprises a core and a cladding, and the cladding is between the core and the first control element.

5. The semiconductor device of claim 4 , wherein the first control element comprises a conductive material.

6. The semiconductor device of claim 4 , wherein the first control element comprises a heavily doped region.

7. The semiconductor device of claim 4 , wherein the first control element extends along an entirety of the cladding adjacent to a beam deflector region of the core.

8. The semiconductor device of claim 4 , wherein the first control element extends along a central portion of the cladding adjacent to a beam deflector region of the core, and peripheral portions of the cladding adjacent to the beam deflector region of the core are free of the first control element.

9. The semiconductor device of claim 4 , wherein the first control element extends along peripheral portions of the cladding adjacent to a beam deflector region of the core, and a central portion of the cladding adjacent to the beam deflector region of the core is free of the first control element.

10. The semiconductor device of claim 4 , further comprising multiple conductive vias electrically connected to the first control element.

11. The semiconductor device of claim 4 , wherein the second beam deflector comprises a second control element, and the cladding is between the core and the second control element.

12. The semiconductor device of claim 1 , wherein the OTV comprises a core and a cladding.

13. The semiconductor device of claim 12 , further comprising a control element between the cladding and the substrate.

14. A semiconductor device comprising:

a substrate, wherein the substrate comprises a semiconductor material;

a waveguide on a first side of the substrate, wherein the waveguide comprises a core and a cladding;

a photonic element on a second side of the substrate, wherein the second side of the substrate is opposite the first side of the substrate;

an optical through via (OTV) optically connecting the waveguide to the photonic element, wherein the OTV extends from the first side of the substrate to the second side of the substrate; and

a beam deflector in optical communication with the photonic element, wherein the beam deflector is configured to receive at least one voltage signal, the beam deflector is configured to deflect an optical signal along a first path in response to the at least one voltage signal having a first voltage, and the beam deflector is configured to deflect the optical signal along a second path, different from the first path, in response to the at least one voltage signal having a second voltage different from the first voltage.

15. The semiconductor device of claim 14 , wherein the beam deflector comprises a conductive element.

16. The semiconductor device of claim 15 , wherein the beam deflector is configured to change a temperature of the cladding adjacent to a beam deflector region of the core in response to the at least one voltage signal.

17. The semiconductor device of claim 14 , wherein the beam deflector comprises a heavily doped region.

18. The semiconductor device of claim 17 , wherein the beam deflector is configured to change a dopant concentration in the cladding adjacent to a beam deflector region of the core in response to the at least one voltage signal.

19. A semiconductor device comprising:

a substrate, wherein the substrate comprises a semiconductor material;

a waveguide on a first side of the substrate, wherein the waveguide comprises a core and a cladding;

a photonic element on a second side of the substrate, wherein the second side of the substrate is opposite the first side of the substrate;

an optical through via (OTV) optically connecting the waveguide to the photonic element; and

a beam deflector in optical communication with the photonic element, wherein the beam deflector is configured to receive at least one voltage signal, the beam deflector is configured to deflect an optical signal in a first direction in response to the at least one voltage signal having a first voltage, and the beam deflector is configured to deflect the optical signal in a second direction, different from the first direction, in response to the at least one voltage signal having a second voltage different from the first voltage.

20. The semiconductor device of claim 19 , wherein the beam deflector comprises a plurality of control elements, wherein each of the plurality of control elements are spaced from another of the plurality of control elements.