High-frequency module
A ground plane is disposed in a dielectric substrate or on the top surface of the dielectric substrate. A high-frequency semiconductor device is mounted on the bottom surface of the dielectric substrate. A shield structure that is provided in a space closer to the bottom surface than the ground plane is surrounds the high-frequency semiconductor device from below and sideways of the high-frequency semiconductor device and is connected to the ground plane. An opening is formed in the shield structure. A radiation-structure portion causes a high-frequency signal output by the high-frequency semiconductor device to be radiated through the opening.
1. A high-frequency module comprising:
a dielectric substrate;
a ground plane provided in the dielectric substrate or on a top surface of the dielectric substrate;
a high-frequency semiconductor device mounted on a bottom surface of the dielectric substrate;
a shield structure provided in a space closer to the bottom surface than the ground plane is and surrounding the high-frequency semiconductor device from below and from side of the high-frequency semiconductor device, the shield structure being connected to the ground plane and having an opening;
a radiation-structure portion for radiating a high-frequency signal outputted by the high-frequency semiconductor device as electromagnetic waves through the opening; and
an upper radiating element provided at a portion of the dielectric substrate above the ground plane and driven by the high-frequency semiconductor device.
2. The high-frequency module according to claim 1 ,
wherein the shield structure includes a first portion disposed below the high-frequency semiconductor device so as to be parallel to the dielectric substrate and a second portion connecting the first portion and the ground plane to each other, and
wherein the opening is provided in the first portion.
3. The high-frequency module according to claim 1 ,
wherein the radiation-structure portion includes a patch antenna disposed in a space surrounded by the ground plane and the shield structure and radiating electromagnetic waves toward the opening.
4. The high-frequency module according to claim 1 ,
wherein the radiation-structure portion includes
a feed element disposed in a space surrounded by the ground plane and the shield structure, wherein power is supplied to the feed element by the high-frequency semiconductor device and
a passive element disposed on a same plane as the opening so as to be located inside the opening and electromagnetically coupled to the feed element.
5. The high-frequency module according to claim 1 ,
wherein the radiation-structure portion includes
a patch antenna disposed on a same plane as the opening so as to be located inside the opening,
a conductor column extending from the bottom surface of the dielectric substrate so as to reach the patch antenna, and
a transmission line through which a high-frequency signal is transmitted from the high-frequency semiconductor device to the conductor column.
6. The high-frequency module according to claim 1 ,
wherein the radiation-structure portion includes a slot antenna having the opening serving as a slot.
7. The high-frequency module according to claim 6 ,
wherein the radiation-structure portion includes an excitation conductor disposed in a space shielded by the shield structure and exciting the slot antenna.
8. The high-frequency module according to claim 6 ,
wherein the radiation-structure portion includes a differential transmission line through which a differential signal is supplied from the high-frequency semiconductor device to the slot antenna.
9. The high-frequency module according to claim 3 ,
wherein the radiation-structure portion includes a patch antenna disposed in a space surrounded by the ground plane and the shield structure and radiating electromagnetic waves toward the opening.
10. The high-frequency module according to claim 3 ,
wherein the radiation-structure portion includes
a feed element disposed in a space surrounded by the ground plane and the shield structure, wherein power is supplied to the feed element by the high-frequency semiconductor device and
a passive element disposed on a same plane as the opening so as to be located inside the opening and electromagnetically coupled to the feed element.
11. The high-frequency module according to claim 3 ,
wherein the radiation-structure portion includes
a patch antenna disposed on a same plane as the opening so as to be located inside the opening,
a conductor column extending from the bottom surface of the dielectric substrate so as to reach the patch antenna, and
a transmission line through which a high-frequency signal is transmitted from the high-frequency semiconductor device to the conductor column.
12. The high-frequency module according to claim 3 ,
wherein the radiation-structure portion includes a slot antenna having the opening serving as a slot.