Integrated circuit and method for manufacturing the same
An integrated circuit includes a first circuit with m first units coupled in parallel, any of the first units including one or more first transistors coupled in series, and a second circuit with n second units coupled in parallel, any of the second units including one or more second transistors coupled in series. A gate terminal of the first circuit is coupled to a gate terminal of the second circuit. M and n are different positive integers.
1. An integrated circuit, comprising:
a first circuit comprising m first units coupled in parallel, any of the first units comprising one or more first transistors coupled in series; and
a second circuit comprising n second units coupled in parallel, any of the second units comprising one or more second transistors coupled in series, wherein the one or more first transistors and the one or more second transistors are of the same conductivity type;
wherein a gate terminal of the first circuit is coupled to a gate terminal of the second circuit, and
m and n are different positive integers.
2. The integrated circuit of claim 1 , wherein a drain terminal of the first circuit is coupled to a source terminal of the second circuit, and m is smaller than n.
3. The integrated circuit of claim 1 , further comprising:
a third circuit comprising m third units coupled in parallel, any of the third units comprising one or more third transistors coupled in series, wherein a source terminal of the first circuit is coupled to a drain terminal of the third circuit.
4. The integrated circuit of claim 1 , further comprising:
a plurality of stage circuits, any of the stage circuits comprising a plurality of units coupled in parallel, any of the units comprising one or more transistors coupled in series, wherein the number of the units in one stage circuit is greater than or equal to the number of the units in a previous stage circuit.
5. The integrated circuit of claim 1 , wherein a threshold voltage of the one or more first transistors and a threshold voltage of the one or more second transistors are different.
6. The integrated circuit of claim 1 , wherein a drain terminal of the first circuit is coupled to a source terminal of the second circuit, and a threshold voltage of the one or more first transistors is greater than a threshold voltage of the one or more second transistors.
7. The integrated circuit of claim 1 , further comprising:
a third circuit comprising a plurality of third units coupled in parallel, any of the third units comprising one or more third transistors coupled in series, wherein a source terminal of the first circuit is coupled to a drain terminal of the third circuit, and a threshold voltage of the one or more first transistors and a threshold voltage of the one or more third transistors are the same.
8. The integrated circuit of claim 1 , further comprising:
a plurality of stage circuits, any of the stage circuits comprising a plurality of units coupled in parallel, any of the units comprising a plurality of transistors coupled in series, wherein a threshold voltage of the transistors in one stage circuit is lower than or equal to a threshold voltage of the transistors in a previous stage circuit.
9. A circuit, comprising:
a first stacked-gate circuit comprising a plurality of first transistors with gate terminals, the gate terminals of the first transistors being coupled to each other; and
a second stacked-gate circuit coupled to the first stacked-gate circuit, the second stacked-gate circuit comprising a plurality of second transistors with gate terminals, the gate terminals of the second transistors being coupled to each other;
wherein a threshold voltage of the first transistors is greater than a threshold voltage of the second transistors, and the first transistors and the second transistors are of the same conductivity type.
10. The circuit of claim 9 , wherein a source of the circuit is connected to a source terminal of one of the first transistors in the first stacked-gate circuit, a drain of the circuit is connected to a drain terminal of one of the second transistors in the second stacked-gate circuit, and a control node of the circuit is coupled to the gate terminals of the first transistors and the gate terminals of the second transistors.
11. The circuit of claim 9 , wherein the first transistors are arranged in m first units coupled in parallel, the first transistors in the same first unit being coupled in series;
wherein the second transistors are arranged in n second units coupled in parallel, the second transistors in the same second unit being coupled in series, m and n being different positive integers.
12. The circuit of claim 11 , wherein a drain terminal of the first stacked-gate circuit is coupled to a source terminal of the second stacked-gate circuit, and m is smaller than n.
13. The circuit of claim 9 , further comprising:
a third stacked-gate circuit coupled to the second stacked-gate circuit, the third stacked-gate circuit comprising a plurality of third transistors with gate terminals, the gate terminals of the third transistors being coupled to each other;
wherein the threshold voltage of the second transistors is greater than a threshold voltage of the third transistors.
14. The circuit of claim 13 , wherein the third transistors are arranged in a plurality of third units coupled in parallel, the third transistors in the same third unit being coupled in series.