Electro-optical device having thick insulating film and electronic apparatus
An electro-optical device includes a substrate having light-transmissivity, a capacitance element having light-transmissivity and including a first electrode, a dielectric layer, and a second electrode, a first insulating film having light-transmissivity, a light-shielding film, a second insulating film having light-transmissivity, and a transistor. The first electrode, the dielectric layer, the second electrode, the first insulating film, the light-shielding film, the second insulating film, and the transistor are layered in this order from the substrate side, and an interfacial reflection at the first insulating film side of the light-shielding film is greater than an interfacial reflection at the dielectric layer side of the first electrode with respect to light entering from the substrate.
1. An electro-optical device comprising:
a substrate having light-transmissivity,
a transistor having a semiconductor layer,
a capacitance element having light-transmissivity and including a first electrode, a dielectric layer, and a second electrode, the capacitance element being disposed between the substrate and the transistor in a thickness direction of the substrate,
a light-shielding film disposed between the capacitance element and the transistor in the thickness direction of the substrate,
a first insulating film having light-transmissivity, and disposed between the light-shielding film and the capacitance element in the thickness direction of the substrate,
a second insulating film having light-transmissivity, and disposed between the first insulating film and the semiconductor layer, and
a third insulating film having light-transmissivity, and disposed between the first insulating film and the substrate in the thickness direction of the substrate, wherein
an entirety of the capacitance element is disposed in the third insulating film, and
each refractive index of the first electrode, the second electrode, and light-shielding film is higher than each refractive index of the dielectric layer, the first insulating film, and the second insulating film.
2. The electro-optical device according to claim 1 , wherein
a thickness d 1 of the first insulating film satisfies the following equation (1):
d 1={(½+ m )×λ}/2× n 1 (1),
wherein
m is 0 or a natural number, λ is a wavelength of the light entering from the substrate, and n 1 is a refractive index of the first insulating film.
3. The electro-optical device according to claim 1 , wherein
a total thickness d 2 of the first electrode and the second electrode satisfies the following equation (2):
d 2={(½+ m )×λ—2× n 3× d 3}/2 ×n 2 (2),
wherein
m is 0 or a natural number, λ is a wavelength of the light entering from the substrate, n 2 is a refractive index of the first electrode or the second electrode, n 3 is a refractive index of the dielectric layer, and d 3 is a thickness of the dielectric layer.
4. The electro-optical device according to claim 1 , wherein
the first insulating film has a thickness thicker than that of the first electrode, the dielectric layer, the second electrode, or the light-shielding film.
5. The electro-optical device according to claim 1 , wherein
the first electrode and the second electrode include polysilicon.
6. The electro-optical device according to claim 1 , wherein
the first insulating film includes an inorganic material containing silicon.
7. The electro-optical device according to claim 1 , wherein
the light-shielding film includes tungsten silicide.
8. An electronic apparatus comprising:
the electro-optical device according to claim 1 ,
an illumination device configured to supply light emitted therefrom having a wavelength of a red component, a green component, or a blue component to the electro-optical device, and
a control unit configured to control operation of the electro-optical device.