Semiconductor devices with fin-top hard mask and methods for fabrication thereof

1. A method for manufacturing a semiconductor device, comprising:

depositing a hard mask layer on a planar top surface of a semiconductor substrate;

depositing one or more patterning layers over the hard mask layer;

etching the hard mask layer and the semiconductor substrate to form a semiconductor fin using the one or more patterning layers as an etching mask, wherein the hard mask layer is disposed on a top surface of the semiconductor fin;

forming a sacrificial gate structure over the semiconductor fin, wherein the hard mask layer is in contact with a top surface of the semiconductor fin, and the sacrificial gate structure is in contact with sidewalls of the semiconductor fin;

removing the hard mask layer to expose the semiconductor fin not covered by the sacrificial gate structure;

forming a first sidewall spacer and a second sidewall spacer on opposite sidewalls of the sacrificial gate structure, wherein the first and second sidewall spacers are formed on and in contact with the top surface of the semiconductor fin;

removing the sacrificial gate structure to expose the semiconductor fin and the hard mask layer between the first and second sidewall spacers; and

removing the hard mask layer to expose the semiconductor fin between the first and second sidewall spacers, wherein the semiconductor fin between the first and second spacers has substantially the same width as the semiconductor fin under the first sidewall spacer after removal of the hard mask layer.

2. The method of claim 1 , further comprising:

forming a gate dielectric layer over the semiconductor fin and side surfaces of the first and second sidewall spacers.

3. The method of claim 1 , wherein forming the sacrificial gate structure comprising:

forming a sacrificial gate dielectric layer over the semiconductor fin and the hard mask layer;

forming a sacrificial gate electrode layer over the sacrificial gate dielectric layer;

forming a patterned mask layer over the sacrificial gate electrode layer; and

removing portions of the sacrificial gate electrode layer using the patterned mask layer as a mask and the hard mask layer as an etch stop layer.

4. The method of claim 1 , further comprising:

forming a semiconductor stack on the semiconductor substrate, wherein the semiconductor stack comprises one or more first semiconductor layers alternately stacked with one or more second semiconductor layers, the hard mask layer is formed on the semiconductor stack, and the semiconductor fin comprises the semiconductor stack and a well portion formed from the semiconductor substrate.

5. The method of claim 4 , further comprising, after removing the sacrificial gate structure to expose the semiconductor fin and the hard mask layer between the first and second sidewall spacers, removing the one or more first semiconductor layers from the semiconductor stack.

6. The method of claim 1 , further comprising:

forming a hybrid fin parallel to the semiconductor fin prior to forming the sacrificial gate structure, wherein the sacrificial gate dielectric layer is deposited on a top surface and sidewalls of the hybrid fin.

7. The method of claim 1 , wherein after removal of the hard mark layer, a portion of the hard mask layer is disposed on the semiconductor fin adjacent the first sidewall spacer.

8. The method of claim 7 , further comprising:

forming a gate dielectric layer over the portion of the hard mask layer, the semiconductor fin between the first and second sidewall spacers.

9. A method for manufacturing a semiconductor device, comprising:

depositing a hard mask layer over a planar top surface of a semiconductor substrate; and then

etching the hard mask layer and the semiconductor substrate to form a plurality of semiconductor fins, wherein the hard mask layer is on each of the plurality of semiconductor fins;

forming a sacrificial gate dielectric layer over the plurality of semiconductor fins and the hard mask layer;

forming a sacrificial gate electrode layer over the sacrificial gate dielectric layer;

patterning the sacrificial gate electrode layer and the sacrificial gate dielectric layer to form a sacrificial gate structure over the plurality of semiconductor fins and the hard mask layer;

removing the hard mask layer from the plurality of semiconductor fins not covered by the sacrificial gate structure to expose top surfaces of the plurality of semiconductor fins;

forming a first sidewall spacer and a second sidewall spacer on opposite sidewalls of the sacrificial gate structure, wherein the first and second sidewall spacers are formed on and in contact with the top surfaces of the plurality of semiconductor finsi

removing the sacrificial gate electrode layer and the sacrificial gate dielectric layer between the sidewall spacers; and

removing the hard mask layer from the plurality of semiconductor fins between the sidewall spacers, wherein the plurality of semiconductor fins between the first and second spacers have the same widths as the plurality of semiconductors fin under the first sidewall spacers after removal of the hard mask layer.

10. The method of claim 9 , further comprising:

forming a gate dielectric layer on the plurality of semiconductor fins and the sidewall spacers.

11. The method of claim 9 , further comprising forming a hybrid fin between two immediately adjacent semiconductor fins of the plurality of semiconductor fins prior to forming the sacrificial gate dielectric layer.

12. The method of claim 9 further comprising: prior to forming the hard mask layer, forming a semiconductor stack on the semiconductor substrate, wherein the semiconductor stack comprises two or more first semiconductor layers alternately stacked with two or more second semiconductor layers, the hard mask layer is formed on the semiconductor stack, and each of the plurality of semiconductor fins comprises the semiconductor stack and a well portion formed from the semiconductor substrate; and removing the two or more first semiconductor layers between the sidewall spacers after removing the sacrificial gate electrode layer and the sacrificial gate dielectric layer.

13. The method of claim 12 , wherein removing the one or more first semiconductor layers is performed after removing the hard mask layer from the plurality of semiconductor fins between the sidewall spacers.

14. The method of claim 9 , wherein after removal of the hard mark layer from the plurality of semiconductor fins between the first and second sidewall spacers, portions of the hard mask layer is disposed on the plurality of semiconductor fins adjacent the first sidewall spacers.

15. The method of claim 14 , further comprising:

forming a gate dielectric layer on the plurality of semiconductor fins, the portions of the hard mark layer, and the first and second sidewall spacers.

16. A method forming a semiconductor device, comprising:

depositing a hard mask layer on a planar top surface of a semiconductor substrate; and then,

forming a first fin having a first channel region by etching the hard mask layer and the semiconductor substrate, wherein the hard mask layer is on a top surface of the first fin;

forming a sacrificial gate structure over the first channel region of the first fin and the hard mask layer;

removing the hard mask layer from the first fin not covered by the sacrificial gate structure to expose the top surface of the first fin; and

forming a first sidewall spacer and a second sidewall spacer on opposite sidewalls of the sacrificial gate structure, wherein the first and second sidewall spacers are formed on and in contact with the top surface of the first fin;

removing the sacrificial gate structure between the first and second spacers;

forming a gate structure disposed on the first channel region of the first fin, wherein the gate structure comprises:

a gate dielectric layer disposed on the first channel region; and

a gate electrode layer disposed on the gate dielectric layer, wherein a first sidewall spacer is disposed on a sidewall of the gate structure, and a portion of the hard mask layer is disposed on the first channel region adjacent the sidewall spacer; and

prior to forming the gate structure, removing the hard mask layer to expose the first fin between the first and second spacers, wherein the portion of the hard mask layer remains on the first fin.

17. The method of claim 16 , wherein forming the gate structure comprises:

forming the gate dielectric layer over the portion of the hard mask layer, the first fin and a side surface of the first and second sidewall spacers.

18. The method of claim 16 , wherein forming the first fin comprises:

depositing the hard mask layer over a semiconductor substrate; and

etching the hard mask layer and the semiconductor substrate to form the first fin.

19. The method of claim 18 , wherein forming the first fin further comprises:

forming a semiconductor stack on the semiconductor substrate, wherein the semiconductor stack comprises one or more first semiconductor layers alternately stacked with one or more second semiconductor layers, the hard mask layer is formed on the semiconductor stack, and the first fin comprises the semiconductor stack and a well portion formed from the semiconductor substrate.

20. The method of claim 16 , wherein after removing the hard mask layer to expose the first fin between the first and second spacers, the semiconductor fin between the first and second spacers has substantially the same width as the semiconductor fin under the first sidewall spacer.