Transistor structure

1. A transistor comprising:

a first drift region of a substrate;

a first source/drain region disposed in the first drift region;

a second source/drain region disposed in the first drift region and spaced from the first source/drain region;

a first trench extending from the first source/drain region to the second source/drain region along on a first side of the first drift region;

a first electrically-conductive element located in the first trench;

a gate electrode located in the first trench adjacent the first electrically-conductive element; and

a channel area adjacent the gate electrode and the first source/drain region and in contact with the first drift region, wherein the channel area and the second source/drain region are on the same surface side of the substrate.

2. The transistor of claim 1 , further comprising:

a second trench extending along a second side of the first drift region, the second side opposite to the first side; and

a second electrically-conductive element located in the second trench.

3. The transistor of claim 2 , wherein a portion of the second electrically-conductive element is located opposite the channel area.

4. The transistor of claim 1 , further comprising a buried well spaced from the surface side of the substrate by the first drift region, wherein the first trench reaches well buried well.

5. The transistor of claim 4 , wherein a second portion of the first drift region is located between the channel area and the buried well.

6. The transistor of claim 5 , wherein a portion of the first electrically-conductive element is located opposite the second portion of the first drift region.

7. The transistor of claim 1 , wherein a portion of the first drift region closer to the second source/drain region has a higher doping level than a portion of the first drift region further from the second source/drain region.

8. The transistor of claim 1 , wherein the first source/drain region covers a portion of the channel area.

9. The transistor of claim 8 , wherein the first source/drain region comprises a branch extending between the first trench and a channel contact area of the channel area.

10. An electronic device comprising:

a plurality of transistors of claim 1 .

11. A transistor comprising:

a first drift region of a substrate;

a first source/drain area disposed in the first drift region;

a second source/drain area disposed in the first drift region and laterally spaced from the first source/drain area;

a first trench extending from the first source/drain area to the second source/drain area along a first side of the first drift region;

a first electrically-conductive element located in the first trench;

a first gate located in the first trench;

a second trench extending from the first source/drain area to the second source/drain area along a second side of the first drift region, the second side opposite to the first side;

a second electrically-conductive element located in the second trench;

a second gate located in the second trench;

a channel area in contact with the first drift region and located between the first trench and the second trench; and

a channel contact area contacting the channel area;

wherein the first source/drain area comprises a branch between the first trench and the second trench located on a front surface side of the substrate, the branch partially surrounds the channel contact area and is located above the channel area; and

wherein the second source/drain area is located on the same front surface side of the substrate.

12. The transistor according to claim 11 , wherein the first and second trenches reach a buried well located on a rear surface side of the substrate.

13. A transistor comprising:

a first drift region of a substrate;

a first trench extending in a current flowing direction and delimiting the first drift region on a first side;

a first electrically-conductive element located in the first trench;

a gate electrode located in the first trench;

a first source/drain region adjacent the gate electrode in a direction perpendicular to the current flowing direction;

a channel area between and in contact with both the first drift region and the first source/drain region; and

a second source/drain region spaced from the channel area in by the first drift region in the current flowing direction;

wherein the first trench extends from the first source/drain region to the second source/drain region;

wherein the first drift region between the channel area and the second source/drain region is subdivided into a plurality of sub-regions;

wherein a sub-region closest to the channel area has a lower doping concentration than a sub-region closest to the second source/drain region; and

wherein the channel area and the second source/drain region are on the same surface side of the substrate.

14. The transistor of claim 13 , further comprising:

a second trench extending in the current flowing direction and delimiting the first drift region on a second side opposite to the first side; and

a second electrically-conductive element located in the second trench.

15. The transistor of claim 13 , further comprising a buried well spaced from the surface side of the substrate by the first drift region, wherein the first trench reaches the buried well.

16. The transistor of claim 15 , wherein a second portion of the first drift region is located between the channel area and the buried well.

17. The transistor of claim 16 , wherein a portion of the first electrically-conductive element is located opposite the second portion of the first drift region.