Display device and method of manufacturing the same
A display device may include a substrate, pixels, and a crack mitigation structure. The substrate may include a main region, a sub-region, and a bending region. The bending region may be connected between the main region and the sub-region and may include a curved outline section. The pixels may be disposed on the main region. The crack mitigation structure may be disposed on the bending region. A section of the crack mitigation structure may be substantially parallel to the curved outline section.
1. A method for manufacturing a display device, the method comprising:
forming an insulating layer on a substrate, wherein the substrate comprises a main region and a neighboring region, wherein the neighboring region is directly connected to the main region, wherein the insulating layer comprises a first insulating section and a second insulating section, wherein the first insulating section overlaps the main region, and wherein the second insulating section overlaps the neighboring region;
forming transistors that overlap the first insulating section;
etching at least the second insulating section to form dams, wherein each of the dams comprises a portion of the second insulating section; and
cutting the neighboring region at a location between two of the dams to form a bending region, wherein the bending region comprises a curved outline section, wherein remaining dams of the dams on the bending region are substantially parallel to the curved outline section.
2. The method of claim 1 , further comprising:
forming an insulating film on the portions of the second insulating section; and
etching the insulating film at locations between the portions of the second insulating section.
3. A method for manufacturing a display device, the method comprising:
forming an insulating layer on a substrate, wherein the substrate comprises a main region and a neighboring region, wherein the neighboring region is directly connected to the main region, wherein the insulating layer comprises a first insulating section and a second insulating section, wherein the first insulating section overlaps the main region, and wherein the second insulating section overlaps the neighboring region;
forming transistors that overlap the first insulating section;
etching at least the second insulating section to form dams, wherein each of the dams comprises a portion of the second insulating section;
cutting the neighboring region at a location between two of the dams to form a bending region, wherein the bending region comprises a curved outline section;
forming an insulating film on the portions of the second insulating section;
etching the insulating film at locations between the portions of the second insulating section;
forming a pixel definition layer on remaining portions of the insulating film on the portions of the second insulating section; and
etching the pixel definition layer at locations between the remaining portions of the insulating film, wherein each of the dams comprises a remaining portion of the pixel definition layer.
4. The method of claim 1 ,
wherein the bending region is partially exposed between the remaining dams.