EUV photomask
An EUV photomask may include a multi-layered structure on a substrate, a capping layer on the multi-layered structure, and an absorber on the capping layer. The absorber may include a first sidewall and a second sidewall. The first sidewall may extend from an upper surface of the capping layer in a vertical direction substantially perpendicular to an upper surface of the substrate, and may be a flat plane. The second sidewall may extend from the first sidewall in the vertical direction, and may be a curved surface.
1. An EUV photomask comprising:
a substrate;
a multi-layered structure on the substrate;
a capping layer on the multi-layered structure; and
an absorber on the capping layer,
wherein the absorber includes a first sidewall and a second sidewall,
the first sidewall extends from an upper surface of the capping layer in a vertical direction substantially perpendicular to an upper surface of the substrate,
the first sidewall is a flat plane,
the second sidewall extends from the first sidewall in the vertical direction, and
the second sidewall is a curved surface.
2. The EUV photomask as claimed in claim 1 , wherein the second sidewall of the absorber is a convex curved surface having a slope with respect to the upper surface of the substrate, the slope gradually decreasing from a bottom toward a top thereof.
3. The EUV photomask as claimed in claim 1 , wherein:
the absorber extends in a first direction substantially parallel to the upper surface of the substrate,
the absorber includes each of the first sidewall and the second sidewall at opposite sides of the absorber in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction, and
top ends of the respective second sidewalls are connected with each other.
4. The EUV photomask as claimed in claim 1 , wherein
the absorber further includes an upper surface on the capping layer,
the upper surface extends in a horizontal direction substantially parallel to the upper surface of the substrate, and
the second sidewall of the absorber is connected to the upper surface of the absorber.
5. The EUV photomask as claimed in claim 4 , wherein
the absorber extends in a first direction substantially parallel to the upper surface of the substrate, and
the absorber includes each of the first sidewall and the second sidewall at opposite sides of the absorber in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction.
6. The EUV photomask as claimed in claim 1 , wherein a height of a top end of the first sidewall of the absorber is equal to or less than about half a height of the upper surface of the absorber.
7. The EUV photomask as claimed in claim 1 , wherein the absorber includes tantalum boronitride or tantalum nitride.
8. The EUV photomask as claimed in claim 6 , wherein the multi-layered structure includes a plurality of first layers and a plurality of second layers alternately and repeatedly stacked in the vertical direction, and
the plurality of first layers and the plurality of second layers include different materials from each other.
9. The EUV photomask as claimed in claim 8 , wherein
the plurality of first layers and the plurality of second layers include molybdenum and silicon, respectively, or
the plurality of first layers and the plurality of second layers include molybdenum and beryllium, respectively.
10. The EUV photomask as claimed in claim 1 , wherein the capping layer includes ruthenium or silicon.
11. An EUV photomask comprising:
a substrate;
a multi-layered structure on the substrate;
a capping layer on the multi-layered structure; and
an absorber on the capping layer,
wherein a cross-section of the absorber in a vertical direction substantially perpendicular to an upper surface of the substrate has a shape of a rounded rectangle in which two upper corners are rounded.
12. The EUV photomask as claimed in claim 11 , wherein
the absorber includes a first sidewall, an upper surface, and a second sidewall,
the first sidewall of the absorber extends from an upper surface of the capping layer in the vertical direction,
the first sidewall of the absorber is a flat plane,
the upper surface of the absorber extends on the capping layer in a horizontal direction substantially parallel to the upper surface of the substrate,
the second sidewall of the absorber is between the first sidewall of the absorber and the upper surface of the absorber and connected thereto,
the second sidewall is a convex curved surface having a slope with respect to the upper surface of the substrate that gradually decreases from a bottom toward a top thereof.
13. The EUV photomask as claimed in claim 12 , wherein
the absorber extends in a first direction substantially parallel to the upper surface of the substrate, and
the absorber includes each of the first sidewall and the second sidewall at opposite sides of the absorber in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction.
14. The EUV photomask as claimed in claim 12 , wherein a top end of the first sidewall of the absorber is equal to or less than about half a height of the upper surface of the absorber.
15. The EUV photomask as claimed in claim 11 , wherein
the multi-layered structure includes a plurality of first layers and a plurality of second layers alternately and repeatedly stacked in the vertical direction, and
the plurality of first layers and the plurality of second layers include molybdenum and silicon, respectively, or
the plurality of first layers and the plurality of second layers include molybdenum and beryllium, respectively.
16. An EUV photomask comprising:
a substrate;
a multi-layered structure on the substrate;
a capping layer on the multi-layered structure; and
an absorber on the capping layer,
wherein a cross-section of the absorber, in a vertical direction substantially perpendicular to an upper surface of the substrate, has a shape of at least a portion of a circle or ellipse.
17. The EUV photomask as claimed in claim 16 , wherein
the absorber includes a first sidewall and a second sidewall,
the first sidewall extends from an upper surface of the capping layer in the vertical direction,
the first sidewall is a convex curved surface having a slope with respect to an upper surface of the substrate that gradually increases from a bottom toward a top thereof, and
the second sidewall extends from the first sidewall in the vertical direction,
the second sidewall is a convex curved surface having a slope with respect to the upper surface of the substrate that gradually increases from a bottom toward a top thereof.
18. The EUV photomask as claimed in claim 17 , wherein:
the absorber extends in a first direction substantially parallel to the upper surface of the substrate,
the absorber includes each of the first sidewall and the second sidewall at opposite sides of the absorber in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction, and
the first sidewall and the second sidewall are connected with each other.
19. The EUV photomask as claimed in claim 17 , wherein
the absorber further includes a lower surface and an upper surface,
the lower surface of the absorber contacts the upper surface of the capping layer and extending in a horizontal direction substantially parallel to the upper surface of the substrate,
the lower surface of the absorber is connected to the first sidewall of the absorber,
the lower surface of the absorber is a flat plane,
the upper surface of the absorber is connected to the second sidewall of the absorber on the capping layer, and
the upper surface of the absorber extends in the horizontal direction and is a flat plane.
20. The EUV photomask as claimed in claim 19 , wherein
the absorber extends in a first direction substantially parallel to the upper surface of the substrate, and
the absorber includes each of the first sidewall and the second sidewall at opposite sides of the absorber in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction.