Ruthenium liner and cap for back-end-of-line applications
Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.
1. A method of forming an electronic device, the method comprising:
forming a passivation layer in a via portion of a surface structure formed in a dielectric material, the passivation layer formed on a surface of a first conductive material and separated from the dielectric material by a barrier layer formed on sidewalls, a bottom of a trench portion of the surface structure and a top of the dielectric material, the first conductive material extending along a first direction;
forming a liner on the barrier layer, the liner having a liner bottom surface contacting the passivation layer in the via portion;
removing the passivation layer to leave the bottom surface of the liner spaced a distance from a top surface of the first conductive line;
filling the surface structure with a conductive fill to form a via in the via portion and a second conductive line in the trench portion, the second conductive line extending along a second direction, the via contacting the first conductive line in the via portion; and
selectively forming a capping layer on a top surface of the second conductive line of the conductive fill, wherein selectively forming the capping layer comprises forming a first capping layer on the top surface of the second conductive line of the conductive fill; and forming a second capping layer directly on the first capping layer.
2. The method of claim 1 , wherein the liner comprises a ruthenium layer in contact with the barrier layer and a cobalt layer on an opposite side of the ruthenium layer from the barrier layer.
3. The method of claim 2 , wherein the ruthenium layer has a thickness in the range of 2.5 Å to 25 Å and the cobalt layer has a thickness in the range of 2.5 Å to 25 Å.
4. The method of claim 2 , wherein the ruthenium layer and the cobalt layer have a thickness ratio in the range of 0.95:1 to 1:0.95.
5. The method of claim 1 , wherein the first capping layer comprises a ruthenium layer in contact with the top surface of the second conductive line of the conductive fill and the second capping layer comprises a cobalt layer on an opposite side of the ruthenium layer from the top surface of the second conductive line of the conductive fill.
6. The method of claim 5 , wherein the first capping layer has a thickness in the range of 2.5 Å to 25 Å and the second capping layer has a thickness in the range of 2.5 Å to 25 Å.