IP Library › Granted Patent US 11,764,194
Granted Patent B2
US 11,764,194 · App. 17/174,934 · Granted Sep 19, 2023

Micro-light-emitting diode display apparatus and method of manufacturing the same

Inventors: Seogwoo Hong (Yongin-si, KR); Junsik Hwang (Hwaseong-si, KR); Kyungwook Hwang (Seoul, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01L25/0753H01L27/1214H01L33/50H01L33/62H01L2933/0066
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Quick Facts
Patent No.
US 11,764,194
App. No.
17/174,934
Granted
Sep 19, 2023
Kind
B2
Abstract

The present disclosure provides a micro-light-emitting diode display apparatus and a method of manufacturing the same. Provided is a micro-light-emitting diode (LED) display apparatus including a plurality of pixels, the micro-LED display apparatus including a driving circuit substrate, a first electrode provided on the driving circuit substrate, one or more micro-light-emitting diodes (LEDs) provided on the first electrode, an insulating layer provided on the one or more micro-LEDs, a via pattern provided in the insulating layer, electrical contacts provided in the via pattern, and a second electrode provided on the electrical contacts, wherein the via pattern exposes a portion of the one or more micro-LEDs.

Claims (52)

1. A micro-light-emitting diode (LED) display apparatus including a plurality of pixels, the micro-LED display apparatus comprising:

a driving circuit substrate;

a first electrode provided on the driving circuit substrate;

one or more micro-light-emitting diodes (LEDs) provided on the first electrode;

an insulating layer provided on the one or more micro-LEDs;

a via pattern provided in the insulating layer;

electrical contacts provided in the via pattern; and

a second electrode provided on the electrical contacts,

wherein the via pattern exposes a portion of the one or more micro-LEDs, and at least one of the electrical contacts provided in the via pattern is not in contact with any one of the one or more micro-LEDs, and

wherein the first electrode has an area size that accommodates at least two micro-LEDs.

2. The micro-light-emitting diode (LED) display apparatus of claim 1 , wherein a thickness of the insulating layer is greater than a thickness of the one or more micro-LEDs.

3. The micro-light-emitting diode (LED) display apparatus of claim 1 , wherein a thickness of each of the electrical contacts corresponds to a distance between an upper surface of the insulating layer and an upper surface of the one or more micro-LEDs.

4. The micro-light-emitting diode (LED) display apparatus of claim 1 , wherein a pitch of the electrical contacts is less than a width of each of the one or more micro-LEDs.

5. The micro-light-emitting diode (LED) display apparatus of claim 1 , wherein each of the plurality of pixels comprises a plurality of sub-pixels, and

wherein the via pattern is provided on each of the plurality of sub-pixels.

6. The micro-light-emitting diode (LED) display apparatus of claim 1 , wherein each of the plurality of pixels comprises a plurality of sub-pixels, and wherein the one or more micro-LEDs are provided on each of the plurality of sub-pixels.

7. The micro-light-emitting diode (LED) display apparatus of claim 6 , wherein the one or more micro-LEDs are arranged in each of the plurality of sub-pixels at an irregular interval.

8. The micro-light-emitting diode (LED) display apparatus of claim 1 , wherein the one or more micro-LEDs are connected between the first electrode and the second electrode.

9. The micro-light-emitting diode (LED) display apparatus of claim 1 , wherein the electrical contacts are provided in dotted patterns, stripe patterns, grid patterns, or concentric-circular patterns.

10. The micro-light-emitting diode (LED) display apparatus of claim 1 , further comprising an electrode pad provided between the one or more micro-LEDs and the first electrode.

11. The micro-light-emitting diode (LED) display apparatus of claim 1 , further comprising a color conversion layer provided on the second electrode, the color conversion layer being configured to convert a color of light emitted from the one or more micro-LEDs.

12. A method of manufacturing a micro-light emitting diode (LED) display apparatus including a plurality of pixels, the method comprising:

providing a first electrode on a driving circuit substrate;

providing one or more micro-light-emitting diodes (LEDs) to the driving circuit substrate such that the one or more micro-LEDs is electrically connected to the first electrode by an electrode pad;

providing an insulating layer on the one or more micro-LEDs;

providing, in the insulating layer, a via pattern exposing a portion of the one or more micro-LEDs;

providing electrical contacts in the via pattern; and

providing a second electrode on the electrical contacts and the insulating layer,

wherein the first electrode has an area size that accommodates at least two micro-LEDs.

13. The method of claim 12 , wherein a thickness of the insulating layer is greater than a thickness of the one or more micro-LEDs.

14. The method of claim 12 , wherein a thickness of each of the electrical contacts corresponds to a distance between an upper surface of the insulating layer and an upper surface of the one or more micro-LEDs.

15. The method of claim 12 , wherein a pitch of the electrical contacts is less than a width of each of the one or more micro-LEDs.

16. The method of claim 12 , wherein each of the plurality of pixels comprises a plurality of sub-pixels, and

wherein the via pattern is provided on each of the plurality of sub-pixels.

17. The method of claim 12 , wherein each of the plurality of pixels comprises a plurality of sub-pixels, and

wherein the one or more micro-LEDs are provided on each of the plurality of sub-pixels.

18. The method of claim 17 , wherein the one or more micro-LEDs are irregularly provided.

19. The method of claim 12 , wherein the one or more micro-LEDs are connected between the first electrode and the second electrode.

20. The method of claim 12 , wherein the electrical contacts are provided in dotted patterns, stripe patterns, grid patterns, or concentric-circular patterns.

21. The method of claim 12 , wherein a depth of the via pattern is selectively adjusted based on adjusting an etch duration time or based on a resolution and a critical dimension of a photosensitive material.

22. A micro-light-emitting diode (LED) display apparatus including a plurality of pixels, the micro-LED display apparatus comprising:

a driving circuit substrate;

a first electrode provided on the driving circuit substrate;

one or more micro-light-emitting diodes (LEDs) provided on the first electrode;

an insulating layer provided on the one or more micro-LEDs;

a via pattern provided in the insulating layer;

electrical contacts provided in the via pattern; and

a second electrode provided on the electrical contacts,

wherein the electrical contacts are spaced apart from the first electrode, and

wherein a thickness of each of the electrical contacts corresponds to a distance between an upper surface of the insulating layer and an upper surface of the one or more micro-LEDs,

wherein at least one of the electrical contacts provided in the via pattern is not in contact with any one of the one or more micro-LEDs, and

wherein the first electrode has an area size that accommodates at least two LEDs.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 12, 2021
From: HONG, SEOGWOO; HWANG, JUNSIK; HWANG, KYUNGWOOK
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 055298/0964 →
Priority Claims (1)
KR 10-2020-0113203 · Sep 4, 2020 · national
Continuity (1)
Related Publication 20220077120A1 · Mar 10, 2022