Diode structures of stacked devices and methods of forming the same
Diode structures of stacked devices and methods of forming the same are provided. Diode structures may include a substrate, an upper semiconductor layer that is spaced apart from the substrate in a vertical direction, an upper thin semiconductor layer protruding from a side surface of the upper semiconductor layer in a first horizontal direction, a lower semiconductor layer that is between the substrate and the upper semiconductor layer and has a first conductivity type, a lower thin semiconductor layer protruding from a side surface of the lower semiconductor layer in the first horizontal direction, a first diode contact that is electrically connected to the lower semiconductor layer, and a second diode contact that is electrically connected to one of the upper semiconductor layer and a portion of the substrate. The one of the upper semiconductor layer and the portion of the substrate may have a second conductivity type.
1. A diode structure comprising:
a substrate;
an upper semiconductor layer on the substrate, wherein the upper semiconductor layer is spaced apart from the substrate in a vertical direction;
an upper thin semiconductor layer protruding from a side surface of the upper semiconductor layer in a first horizontal direction;
a lower semiconductor layer that is between the substrate and the upper semiconductor layer and has a first conductivity type;
a lower thin semiconductor layer protruding from a side surface of the lower semiconductor layer in the first horizontal direction;
a first diode contact that is electrically connected to the lower semiconductor layer; and
a second diode contact that is electrically connected to one of the upper semiconductor layer and a portion of the substrate, wherein the one of the upper semiconductor layer and the portion of the substrate has a second conductivity type.
2. The diode structure of claim 1 , wherein the upper semiconductor layer is electrically connected to the second diode contact and contacts the lower semiconductor layer.
3. The diode structure of claim 1 , wherein the upper semiconductor layer is electrically connected to the second diode contact, and
the diode structure further comprises an intrinsic semiconductor layer that is between the lower semiconductor layer and the upper semiconductor layer and contacts both the lower semiconductor layer and the upper semiconductor layer.
4. The diode structure of claim 1 , wherein the portion of the substrate is electrically connected to the second diode contact and contacts the portion of the substrate.
5. The diode structure of claim 1 , wherein the portion of the substrate is electrically connected to the second diode contact, and
the diode structure further comprises an intrinsic semiconductor layer that is between the portion of the substrate and the lower semiconductor layer and contacts both the portion of the substrate and the lower semiconductor layer.
6. The diode structure of claim 1 , further comprising an insulating layer on the substrate, wherein the lower semiconductor layer and the first diode contact are in the insulating layer, and the second diode contact is in the insulating layer or in the substrate.
7. The diode structure of claim 1 , wherein one of the lower thin semiconductor layer and the upper thin semiconductor layer comprises a plurality of thin semiconductor layers that are stacked in the vertical direction, and the plurality of thin semiconductor layers protrude from the side surface of the lower semiconductor layer or the upper semiconductor layer in the first horizontal direction.
8. The diode structure of claim 1 , wherein the lower semiconductor layer is a first lower semiconductor layer, and the upper semiconductor layer is a first upper semiconductor layer,
the diode structure further comprises a second upper semiconductor layer and a second lower semiconductor layer that is between the substrate and the second upper semiconductor layer,
the lower thin semiconductor layer contacts both a side surface of the first lower semiconductor layer and a side surface of the second lower semiconductor layer, and
the upper thin semiconductor layer contacts both a side surface of the first upper semiconductor layer and a side surface of the second upper semiconductor layer.
9. The diode structure of claim 1 , further comprising a metal layer that is spaced apart from the upper semiconductor layer in the first horizontal direction,
wherein a portion of the upper thin semiconductor layer is in the metal layer.
10. The diode structure of claim 1 , wherein the upper semiconductor layer has the second conductivity type and is electrically connected to the second diode contact, and
each of the lower semiconductor layer and the upper semiconductor layer is a silicon layer.
11. An integrated circuit device comprising:
a substrate; and
a diode structure comprising:
an upper semiconductor layer on the substrate;
an upper thin semiconductor layer protruding from the upper semiconductor layer;
a lower semiconductor layer that is between the substrate and the upper semiconductor layer;
a lower thin semiconductor layer protruding from the lower semiconductor layer;
a first diode contact that is electrically connected to the lower semiconductor layer or a first portion of the substrate; and
a second diode contact that is electrically connected to the upper semiconductor layer or a second portion of the substrate.
12. The integrated circuit device of claim 11 further comprising a stacked transistor structure comprising:
an upper transistor comprising an upper active layer that is spaced apart from the substrate in a vertical direction; and
a lower transistor between the substrate and the upper transistor, the lower transistor comprising a lower active layer,
wherein the upper active layer and the upper thin semiconductor layer have an equal thickness in the vertical direction, and an uppermost surface of the upper active layer is coplanar with an uppermost surface of the upper thin semiconductor layer.
13. The integrated circuit device of claim 11 , wherein the first diode contact is electrically connected to the lower semiconductor layer, and the lower semiconductor layer has a first conductivity type, and
the second diode contact is electrically connected to the upper semiconductor layer, and the upper semiconductor layer has a second conductivity type.
14. The integrated circuit device of claim 11 , wherein the first diode contact is electrically connected to lower semiconductor layer, and the lower semiconductor layer has a first conductivity type, and
the second diode contact is electrically connected to the second portion of the substrate, and the second portion of the substrate has a second conductivity type.
15. The integrated circuit device of claim 11 , wherein the first diode contact is electrically connected to the first portion of the substrate, and the first portion of the substrate has a first conductivity type, and
the second diode contact is electrically connected to the second portion of the substrate, and the second portion of the substrate has a second conductivity type.
16. The integrated circuit device of claim 15 , further comprising an insulating layer on the substrate,
wherein the lower thin semiconductor layer and the first diode contact are in the insulating layer, and the second diode contact is in the substrate.
17. A method of forming an integrated circuit device, the method comprising:
forming a lower thin semiconductor layer on a substrate;
forming a lower semiconductor layer contacting a side surface of the lower thin semiconductor layer;
forming an upper thin semiconductor layer;
forming an upper semiconductor layer contacting a side surface of the upper thin semiconductor layer;
forming a first diode contact that is electrically connected to the lower semiconductor layer or a first portion of the substrate; and
forming a second diode contact that is electrically connected to the upper semiconductor layer or a second portion of the substrate.
18. The method of claim 17 , further comprising forming an intrinsic semiconductor layer that is between the lower semiconductor layer and the upper semiconductor layer and contacts both the lower semiconductor layer and the upper semiconductor layer or is between the substrate and the lower semiconductor layer and contacts both the substrate and the lower semiconductor layer.
19. The method of claim 17 , wherein the substrate comprises a first surface facing the lower thin semiconductor layer and a second surface that is opposite and parallel to the first surface of the substrate, and
the first diode contact is formed by a process performed on the second surface of the substrate.
20. The method of claim 17 , further comprising:
forming a lower active layer on the substrate; and
forming a lower source/drain region contacting a side surface of the lower active layer,
wherein the lower active layer and the lower thin semiconductor layer are formed concurrently.