Gate air spacer for fin-like field effect transistor
Fin-like field effect transistors (FinFETs) and methods of fabrication thereof are disclosed herein. The FinFETs disclosed herein have gate air spacers integrated into their gate structures. An exemplary transistor includes a fin and a gate structure disposed over the fin between a first epitaxial source/drain feature and a second epitaxial source/drain feature. The gate structure includes a gate electrode, a gate dielectric, and gate air spacers disposed between the gate dielectric and sidewalls of the gate electrode.
1. A method comprising:
forming a dummy gate over a substrate;
forming a dielectric layer over the substrate and the dummy gate;
forming a gate opening in the dielectric layer by removing the dummy gate, wherein the gate opening exposes the substrate;
forming a gate stack in the gate opening over the exposed substrate, wherein the gate stack includes a gate dielectric layer, a semiconductor layer, and a gate electrode layer, the semiconductor layer is disposed between the gate dielectric layer and the gate electrode layer, and the gate dielectric layer is disposed along sidewalls of the dielectric layer;
removing the semiconductor layer from the gate stack to form a first void between the gate dielectric layer and a first sidewall of the gate electrode layer and a second void between the gate dielectric layer and a second sidewall of the gate electrode layer; and
sealing the first void and the second void.
2. The method of claim 1 , wherein the forming the dielectric layer includes:
depositing a first dielectric layer over the substrate, wherein portions of the first dielectric layer are disposed along sidewalls of the dummy gate;
depositing a second dielectric layer over the first dielectric layer; and
performing a planarization process.
3. The method of claim 2 , wherein the forming the gate opening in the dielectric layer further includes removing the portions of the first dielectric layer disposed along the sidewalls of the dummy gate.
4. The method of claim 1 , further comprising:
forming gate spacers along sidewalls of the dummy gate;
forming a first epitaxial source/drain and a second epitaxial source/drain in the substrate after forming the gate spacers, wherein the dummy gate is between the first epitaxial source/drain and the second epitaxial source/drain; and
removing the gate spacers, wherein the forming the gate spacers, the forming the first epitaxial source/drain and the second epitaxial source/drain, and the removing the gate spacers is performed before forming the dielectric layer.
5. The method of claim 1 , further comprising reducing a thickness of the gate electrode layer before removing the semiconductor layer, such that a top surface of the gate electrode layer is below a top surface of the dielectric layer.
6. The method of claim 1 , wherein the dielectric layer is a first dielectric layer and the sealing the first void and the second void includes:
depositing a second dielectric layer over the first dielectric layer and the gate stack, wherein the second dielectric layer partially fills the first void and the second void and the second dielectric layer covers a top surface of the gate electrode layer; and
performing a planarization process to remove the second dielectric layer from a top surface of the first dielectric layer.
7. The method of claim 6 , further comprising forming a gate contact to the gate electrode layer, wherein the gate contact extends through the second dielectric layer.
8. The method of claim 1 , wherein the forming the gate stack in the gate opening over the exposed substrate includes:
forming an interfacial layer over the exposed substrate;
forming a high-k dielectric layer over the interfacial layer, wherein the high-k dielectric layer covers sidewalls of the dielectric layer and wherein the interfacial layer and the high-k dielectric layer provide the gate dielectric layer;
forming the semiconductor layer over the high-k dielectric layer, wherein the semiconductor layer has sidewall portions and a bottom portion;
after removing the bottom portion of the semiconductor layer, forming a metal layer over the semiconductor layer, wherein the metal layer provides the gate electrode layer; and
performing a planarization process on the metal layer, the semiconductor layer, and the high-k dielectric layer.
9. The method of claim 8 , wherein the removing the bottom portion of the semiconductor layer includes:
forming a passivation layer over the sidewall portions of the semiconductor layer;
etching the bottom portion of the semiconductor layer; and
removing the passivation layer.
10. A method comprising:
forming a dummy gate structure over a semiconductor channel, wherein the dummy gate structure includes a dummy gate stack and gate spacers;
forming a first source/drain and a second source/drain, wherein the semiconductor channel is disposed between the first source/drain and the second source/drain;
after removing the gate spacers from the dummy gate structure, forming a dielectric layer over the first source/drain and the second source/drain, wherein the dielectric layer is disposed along sidewalls of the dummy gate stack;
removing the dummy gate stack to form a gate opening in the dielectric layer;
forming a gate dielectric layer in the gate opening;
forming a dummy gate spacer layer over the gate dielectric layer in the gate opening;
removing a bottom portion of the dummy gate spacer layer to expose the gate dielectric layer without removing sidewall portions of the dummy gate spacer layer;
forming a gate electrode layer in the gate opening over the dummy gate spacer layer;
removing the gate electrode layer, the dummy gate spacer layer, and the gate dielectric layer from over a top surface of the dielectric layer;
after recessing the gate electrode layer, removing the dummy gate spacer layer;
forming a seal layer over the gate electrode layer; and
forming a contact to the gate electrode layer.
11. The method of claim 10 , wherein the forming the dummy gate spacer layer includes depositing a silicon layer over the gate dielectric layer in the gate opening.
12. The method of claim 10 , wherein the removing the bottom portion of the dummy gate spacer layer to expose the gate dielectric layer without removing the sidewall portions of the dummy gate spacer layer includes performing a dry etching process that uses a hydrogen-and-bromine comprising precursor and an oxygen-comprising precursor.
13. The method of claim 12 , wherein the performing the dry etching process includes:
forming a polymer layer over the sidewall portions of the dummy gate spacer layer, wherein the polymer layer includes bromine and oxygen; and
removing the polymer layer before forming the gate electrode layer.
14. The method of claim 10 , wherein the removing the bottom portion of the dummy gate spacer layer to expose the gate dielectric layer without removing the sidewall portions of the dummy gate spacer layer includes performing a dry etching process that uses a hydrogen-and-carbon comprising precursor.
15. The method of claim 14 , wherein the performing the dry etching process includes:
forming a polymer layer over the sidewall portions of the dummy gate spacer layer, wherein the polymer layer includes carbon and hydrogen; and
removing the polymer layer before forming the gate electrode layer.
16. A semiconductor structure comprising:
a dielectric layer;
a gate dielectric having a first gate dielectric sidewall portion and a second gate dielectric sidewall portion, wherein the first gate dielectric sidewall portion and the second gate dielectric sidewall portion physically contact the dielectric layer; and
a gate electrode having a first gate electrode sidewall and a second gate electrode sidewall, wherein:
a first void is between the first gate electrode sidewall and the first gate dielectric sidewall portion,
a second void is between the second gate electrode sidewall and the second gate dielectric sidewall portion, and
the gate electrode and the gate dielectric are disposed over a semiconductor channel.
17. The semiconductor structure of claim 16 , wherein the gate dielectric further has a gate dielectric bottom portion that extends between the first gate dielectric sidewall portion and the second gate dielectric sidewall portion, wherein the gate dielectric bottom portion is between the gate electrode and the semiconductor channel.
18. The semiconductor structure of claim 17 , wherein the gate dielectric includes a high-k dielectric layer and an interfacial layer, wherein the first gate dielectric sidewall portion and the second gate dielectric sidewall portion include the high-k dielectric layer and the gate dielectric bottom portion includes the high-k dielectric layer and the interfacial layer.
19. The semiconductor structure of claim 16 , wherein:
a first interface and a second interface are between the dielectric layer and the first gate dielectric sidewall portion and the second gate dielectric sidewall portion, respectively;
the first interface is substantially, vertically aligned with a first source/drain tip of a first epitaxial source/drain feature; and
the second interface is substantially, vertically aligned with a second source/drain tip of a second epitaxial source/drain feature.
20. The semiconductor structure of claim 19 , wherein the dielectric layer includes an interlayer dielectric layer and a contact etch stop layer, wherein a first portion of the contact etch stop layer is between and physically contacts the first epitaxial source/drain feature and the gate dielectric and a second portion of the contact etch stop layer is between and physically contacts the second epitaxial source/drain feature and the gate dielectric.