Group-III nitride semiconductor nanoparticles and production method thereof
Provided are group-III nitride nanoparticles that prevent the piezoelectric field caused by strains on the nanoparticles, achieving good luminous efficiency. The group-III nitride nanoparticle represented by Al x Ga y In z N (0≤x, y, z≤1) incorporating two crystal structures; a wurtzite structure and a zincblende structure, in a single particle. As another example, the group-III nitride nanoparticle has a core-shell structure with a core and a shell, in which the particle constituting the core contains two crystal structures; the wurtzite structure and the zincblende structure, in the particle. Nanoparticles containing the two crystal structures can be produced by using a phosphorus-containing solvent as a reaction solvent, and the mixture ratio of the two crystal structures, (wurtzite structure)/(zincblende structure), is 20/80 or higher.
1. A group-III nitride semiconductor nanoparticle represented by Al x Ga y In z N (0≤x, y, z≤1), comprising two crystal structures in a single particle, wherein the two crystal structures are a wurtzite structure and a zincblende structure, and wherein the group-III nitride semiconductor nanoparticle has an elliptical shape or a rod-like shape.
2. The group-III nitride semiconductor nanoparticle according to claim 1 , wherein the particle comprising the two crystal structures in the single particle has a ratio of the zincblende structure in a range of 25% to 50% based on XRD diffraction intensity.
3. The group-III nitride semiconductor nanoparticle according to claim 2 , wherein the particle comprising the two crystal structures in the single particle has the ratio of the zincblende structure in a range of 30% to 50% based on XRD diffraction intensity.
4. A group-III nitride semiconductor nanoparticle having a core-shell structure formed of a core and a shell, wherein a particle constituting the core comprises two crystal structures within the particle, and wherein the two crystal structures are a wurtzite structure and a zincblende structure.
5. The group-III nitride semiconductor nanoparticle according to claim 4 , wherein the core and the shell have different lattice constants.
6. The group-III nitride semiconductor nanoparticle according to claim 4 , having a rod-like shape, or a disk-like shape.
7. The group-III nitride semiconductor nanoparticle according to claim 4 , wherein the particle comprising the two crystal structures within the particle has a ratio of the zincblende structure in a range of 25% to 50% based on XRD diffraction intensity.