Metal-based etch-stop layer
A semiconductor structure includes a conductive feature, a first metal-based etch-stop layer over the underlying structure, a metal-free etch-stop layer over the first metal-based etch-stop layer, a second metal-based etch-stop layer over the metal-free etch-stop layer, an interlayer dielectric layer over the second metal-based etch-stop layer, and an interconnect structure extending through the first metal-based etch-stop layer, metal-free etch-stop layer, and the second metal-based etch-stop layer, wherein a bottom portion of the conductive interconnect structure directly contacts the conductive feature. The first metal-based etch-stop layer may include a first metallic component having one of aluminum, tantalum, titanium, or hafnium, and the second metal-based etch-stop layer may include a second metallic component the same as or different from the first metallic component. The first metal-based etch-stop layer and the second metal-based etch-stop layer may both be free of silicon.
1. A device comprising:
a first conductive feature;
a first etch stop layer that includes a first metallic component disposed over the first conductive feature;
a second etch stop layer that includes a second metallic component that is different than the first metallic component, the second etch stop layer disposed over the first etch stop layer; and
a metal-free etch stop layer disposed over the first etch stop layer; and
a conductive material extending through the first etch stop layer, the second etch stop layer and the metal-free etch stop layer.
2. The device of claim 1 , wherein the first etch stop layer is substantially free of silicon.
3. The device of claim 1 , wherein the first etch stop layer and the second etch stop layer are substantially free of silicon.
4. The device of claim 1 , wherein the metal-free etch stop layer is disposed between the first etch stop layer and the second etch stop layer.
5. The device of claim 1 , wherein the first metallic component is part of a first metal based dielectric material, the first metal based dielectric material selected from the group consisting of a metal oxide, a metal nitride, a metal carbide and a metal oxynitride, and
wherein the second metallic component is part of a second metal based dielectric material, the second metal based dielectric material selected from the group consisting of a metal oxide, a metal nitride, a metal carbide and a metal oxynitride.
6. The device of claim 1 , wherein the metal-free etch stop layer includes a material selected from the group consisting of silicon oxide, silicon nitride, silicon carbide and silicon oxynitride.
7. The device of claim 1 , wherein the first conductive feature includes a source/drain region.
8. A device comprising:
a first etch stop layer that includes a first metallic component disposed over a substrate;
a second etch stop layer that includes a second metallic component that is different than the first metallic component, the second etch stop layer disposed over the first etch stop layer; and
a metal-free etch stop layer having a thickness about 1.5 times a thickness of either the first etch stop layer or the second dielectric layer, the metal-free etch stop layer disposed over the first etch stop layer; and
a conductive material extending through the first dielectric layer, the second dielectric layer and the metal-free etch stop layer.
9. The device of claim 8 , wherein the first etch stop layer is disposed under the metal-free etch stop layer and the second etch stop layer is disposed over the metal-free etch stop layer.
10. The device of claim 8 , wherein the metal-free etch stop layer interfaces with both the first etch stop layer and the second etch stop layer.
11. The device of claim 8 , further comprising:
a gate structure disposed over a substrate;
a source/drain feature associated with the gate structure and disposed on the substrate, and
wherein the conductive material extend is electrically coupled to the source/drain feature.
12. The device of claim 8 , wherein the first metallic component includes a material selected from the group consisting of aluminum (Al), tantalum (Ta), titanium (Ti), hafnium (Hf), molybdenum (Mo), silver (Ag), gold (Au), manganese (Mn) and zirconium (Zr), and
wherein the second metallic component includes a material selected from the group consisting of aluminum (Al), tantalum (Ta), titanium (Ti), hafnium (Hf), molybdenum (Mo), silver (Ag), gold (Au), manganese (Mn) and zirconium (Zr).
13. The device of claim 8 , wherein the first metallic component is part of a first metal based dielectric material, the first metal based dielectric material selected from the group consisting of a metal oxide, a metal nitride, a metal carbide and a metal oxynitride, and
wherein the second metallic component is part of a second metal based dielectric material, the second metal based dielectric material selected from the group consisting of a metal oxide, a metal nitride, a metal carbide and a metal oxynitride, and
wherein the metal-free etch stop layer includes a material selected from the group consisting of silicon oxide, silicon nitride, silicon carbide and silicon oxynitride.
14. The device of claim 8 , wherein the first etch stop layer and the second etch stop layer are substantially free of silicon, and
wherein the metal-free etch stop layer includes silicon.
15. A method comprising:
forming a first etch-stop layer over a conductive structure, the first etch-stop layer including a first metal component;
forming a metal-free etch-stop layer on the first dielectric etch-stop layer; and
forming a second etch-stop layer on the non-meal etch-stop layer, the second etch-stop layer including a second metal component that is different than the first metal component.
16. The method of claim 15 , wherein the metal-free etch-stop layer has a thickness about 1.5 times a thickness of either the first etch stop layer or the second etch stop layer after the forming of the second etch-stop layer on the metal-free etch-stop layer.
17. The method of claim 15 , further comprising forming a trench extending through the first etch-stop layer, the metal-free etch-stop layer and the second etch-stop layer, wherein the forming of the trench includes performing different etching processes on the first etch-stop layer and the metal-free etch-stop layer.
18. The method of claim 15 , wherein the forming of the trench extending through the first etch-stop layer, the metal-free etch-stop layer and the second etch-stop layer includes:
performing a first etching process with a first etchant to etch a portion of the second etch-stop layer;
performing a second etching process with a second etchant to etch a portion of the metal-free etch-stop layer, the second etchant being different than the first etchant; and
performing a third etching process to etch with a third etchant to etch a portion of the first etch-stop layer.
19. The method of claim 18 , wherein the third etchant is formed of the same material as the first etchant.
20. The device of claim 1 , wherein the metal-free etch stop layer interfaces with one of the first etch stop layer and the second etch stop layer.